APM2306AC-TU

N-ChannelEnhancementModeMOSFET

Features •30V/3.5A, RDS(ON)=70mΩ(typ.)@VGS=5V RDS(ON)=42mΩ(typ.)@VGS=10V •SuperHighDenseCellDesign •HighPowerandCurrentHandlingCapability •SOT-23Package Applications •SwitchingRegulators •SwitchingConverters

APM2306AC-TUL

N-ChannelEnhancementModeMOSFET

Features •30V/3.5A, RDS(ON)=70mΩ(typ.)@VGS=5V RDS(ON)=42mΩ(typ.)@VGS=10V •SuperHighDenseCellDesign •HighPowerandCurrentHandlingCapability •SOT-23Package Applications •SwitchingRegulators •SwitchingConverters

AT-2306

StriplineMountingFixedAttenuators

BC2306

Plastic-EncapsulateMOSFETS

FEATURE TrenchFETPowerMOSFET APPLICATION LoadSwitchforPortableDevices DC/DCConverter

BC2306-CAR

N-Channel30-V(D-S)MOSFET

FEATURES ●PowerMOSFET ●100RgTested ●-CARforautomotiveandotherapplicationsrequiringuniquesiteand controlchangerequirements;AEC-Q101qualifiedandPPAPcapable.

C2306

MMDS/ISM/S-BandMixer

[PacificWireless] Description TheC2306isaflexible,highintercept,frequencyconversionGaAsMMICpackagedina14pinSOICpackage.TheMMICisusableasanupconverterordownconvertermixer.EachsubcircuitisbroughtoutonseparatepinstoallowforcustomfilteringontheIF/RF

C2306TR

MMDS/ISM/S-BandMixer

[PacificWireless] Description TheC2306isaflexible,highintercept,frequencyconversionGaAsMMICpackagedina14pinSOICpackage.TheMMICisusableasanupconverterordownconvertermixer.EachsubcircuitisbroughtoutonseparatepinstoallowforcustomfilteringontheIF/RF

CEN2306A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 20V,4.1A,RDS(ON)=45mW@VGS=4.5V. RDS(ON)=55mW@VGS=2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23-Tpackage. RoHScompliant. RDS(ON)=110mW@VGS=1.8V.

CES2306

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■20V,3.6A,RDS(ON)=60mΩ@VGS=4.5V. RDS(ON)=70mΩ@VGS=2.5V. RDS(ON)=100mΩ@VGS=1.8V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-23package.

CES2306A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 20V,4.1A,RDS(ON)=45mW@VGS=4.5V. RDS(ON)=55mW@VGS=2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23package. RoHScompliant. RDS(ON)=110mW@VGS=1.8V.

CEV2306A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 20V,2.2A,RDS(ON)=45mW@VGS=4.5V. RDS(ON)=55mW@VGS=2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-323package. RoHScompliant. RDS(ON)=110mW@VGS=1.8V.

CJ2306

SOT-23Plastic-EncapsulateMOSFETS

CJ2306

N-Channel30-V(D-S)MOSFET

CJ2306

N-ChannelMOSFET

CM2306

T-13/4Bi-PinBase(.125)

T-13/4Bi-PinBase(.125)

CM2306

T-13/4Bi-PinBase(.125)

CMM2306

800-2700MHzBroadbandDriverAmplifier

Description TheCeleritekCMM2306isapremiumperformance,pin-for-pincompatiblesecondsourcefortheTriQuint®9132andtheMini-Circuits®VNA.Providinghighergainandlowernoisefigurethaneitheroftheexistingstandardamplifiersat25lessdraincurrent,theCMM2306isanexcellentch

CMM2306

BroadbandDriverAmplifier

[Celeritek] Description TheCeleritekCMM2306isapremiumperformance,pin-for-pincompatiblesecondsourcefortheTriQuint®9132andtheMini-Circuits®VNA.Providinghighergainandlowernoisefigurethaneitheroftheexistingstandardamplifiersat25lessdraincurrent,theCMM2306isan

CMM2306-AJ

BroadbandDriverAmplifier

[Celeritek] Description TheCeleritekCMM2306isapremiumperformance,pin-for-pincompatiblesecondsourcefortheTriQuint®9132andtheMini-Circuits®VNA.Providinghighergainandlowernoisefigurethaneitheroftheexistingstandardamplifiersat25lessdraincurrent,theCMM2306isan

CMM2306-AJ

800-2700MHzBroadbandDriverAmplifier

Description TheMimixCMM2306-AJisapremiumperformance,pinfor-pincompatiblesecondsourcefortheTriQuint®9132andtheMini-Circuits®VNA.Providinghighergainandlowernoisefigurethaneitheroftheexistingstandardamplifiersat25lessdraincurrent,theCMM2306-AJisanexcellentc