| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
ATXIndustrialMotherboardwith8th/9thGenerationIntel®Core™Processor,DDR4DRAM,Option:4GLTEFunction Features ■8th/9thGenerationIntel®Core™LGA1151Processor ■SupportsMax.TDP6Core95W ■DDR42666/2400/2133MHz,max.64GB ■TwoIndependentDisplays:HDMIx1,VGAx1,DPx1 ■DualIntel®GigabitEthernet,i210ATx1,i219Vx1 ■USB3.2Gen1portsx4,USB2.0portsx5 ■M.22280 | AAEONAAEON Technology 研扬科技研扬科技（苏州）有限公司 | AAEON | ||
SchottkyBarrierDiode | ZOWIEZOWIE 智威智威科技股份有限公司 | ZOWIE | ||
Heavydutyswitches&pilotlightsofferbothvarietyandreliabilityEnduresharshenvironments | ETC1List of Unclassifed Manufacturers 未分类制造商 | ETC1 | ||
HIGHCURRENTPHASECONTROL | POSEICO Power Semiconductors | POSEICO | ||
NPN14GHzwidebandtransistor Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features ■Highpowergain ■Lownoisefigure ■Hightransitionfrequency ■Goldmetallizationensuresexcellentreliability Applications ■IntendedforRadioFrequency(RF)fronte | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
NPN14GHzwidebandtransistor Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features ■Highpowergain ■Lownoisefigure ■Hightransitionfrequency ■Goldmetallizationensuresexcellentreliability Applications ■IntendedforRadioFrequency(RF)fronte | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
NPN14GHzwidebandtransistor Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features Highpowergain Lownoisefigure Hightransitionfrequency Goldmetallizationensuresexcellentreliability Applications IntendedforRadioFrequency(RF)fro | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
NPN14GHzwidebandtransistor Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features Highpowergain Lownoisefigure Hightransitionfrequency Goldmetallizationensuresexcellentreliability Applications IntendedforRadioFrequency(RF)fro | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
NPN14GHzwidebandtransistor Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features ■Highpowergain ■Lownoisefigure ■Hightransitionfrequency ■Goldmetallizationensuresexcellentreliability Applications ■IntendedforRadioFrequency(RF)fronte | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
NPN14GHzwidebandtransistor Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features ■Highpowergain ■Lownoisefigure ■Hightransitionfrequency ■Goldmetallizationensuresexcellentreliability Applications ■IntendedforRadioFrequency(RF)fronte | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
NPN14GHzwidebandtransistor Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features ■Highpowergain ■Lownoisefigure ■Hightransitionfrequency ■Goldmetallizationensuresexcellentreliability Applications ■IntendedforRadioFrequency(RF)fronte | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
N-channelsiliconfield-effecttransistors | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
SiliconBipolarMMIC-Amplifier(Cascadable50W-gainblock9dBtypicalgainat1.0GHz9dBmtypicalP-1dBat1.0GHz3dB-bandwidth:DCto2.4GHz) SiliconBipolarMMIC-Amplifier Preliminarydata •Cascadable50Ω-gainblock •9dBtypicalgainat1.0GHz •9dBmtypicalP-1dBat1.0GHz •3dB-bandwidth:DCto2.4GHz | SIEMENS Siemens Ltd | SIEMENS | ||
BPS310Series-12mmUncompensatedLowPressureSensor | BournsBourns Inc. 伯恩斯（邦士） | Bourns | ||
SinglePhaseGlassPassivatedSiliconBridgeRectifier | GENESIC GeneSiC Semiconductor, Inc. | GENESIC | ||
3.0ASURFACEMOUNTSCHOTTKYBARRIERDIODE | ZSELECZibo Seno Electronic Engineering Co.,Ltd 淄博圣诺电子淄博圣诺电子工程有限公司 | ZSELEC | ||
MINISURFACEMOUNTSCHOTTKYBARRIERRECTIFIER MINISURFACEMOUNTSCHOTTKYBARRIERRECTIFIER 40V-200V3.0A FEATURES •PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-O •Forsurfacemountedapplications •Lowprofilepackage •Built-instrainrelief •Metaltosiliconrectifier.majority | TAYCHIPSTShenzhen Taychipst Electronic Co., Ltd 泰迪斯电子深圳市泰迪斯电子科技有限公司 | TAYCHIPST | ||
SINGLEPHASE3.0AMPBRIDGERECTIFIERS | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | DGNJDZ |
详细参数
- 型号：
AJN310N-G
- 制造商：
IDEC Corporation
- 功能描述：
TWTD PUSH-LOCK SW
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MPS |
22+ |
QFN14 |
25000 |
只有原装原装,支持BOM配单 |
询价 | ||
TI/德州仪器 |
20+ |
MSOP8 |
5000 |
原装正品 |
询价 | ||
TI/德州仪器 |
23+ |
MSOP-8 |
6500 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
X |
22+ |
SOT23-5 |
3600 |
绝对原装!现货热卖! |
询价 | ||
N/A |
22+ |
QFP |
8200 |
原装现货库存.价格优势!! |
询价 | ||
MAKOSEMI |
2021+ |
SOT-23 |
800004020 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
询价 | ||
CIF |
2022+ |
原厂原包装 |
6800 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
METZ |
24+25+/26+27+ |
车规-元器件 |
143788 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
RIACONNECTINC |
新 |
1331 |
全新原装 货期两周 |
询价 | |||
METZ CONNECT |
2308+ |
167270 |
一级代理,原装正品,公司现货! |
询价 |
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- AJQ35154202
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- AJR30065102
- AJR30072402
- AJR30121903
- AJR30135601
- AJR30135603
- AJS08G5513-001
- AJS09G4413-001
- AJS-107
- AJS-107ASS
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- AJS170TS-DPG
- AJS55A4411
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- AJT015
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- AJT09DAA23
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- AJT14L8884-0XX
- AJT150
- AJT15D8843
- AJT17D88C3
- AJT20
- AJT200/400
- AJT20L8881-0X4
- AJT3
- AJT30G4413-001
