首页 >AFBR-452BZ>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
5-PinMiniFlatPackageHighSpeedTransistorOptocoupler DESCRIPTION TheFODM452andFODM453optocouplersconsistofanAlGaAsLEDopticallycoupledtoahighspeedphotodetectortransistor. Thedevicesarehousedinacompact5-pinminiflatpackageforoptimummountingdensity.TheFODM453featuresahighCMRratingforoptimumcommonmodetransient | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
5-PinMiniFlatPackageHighSpeedTransistorOptocoupler Description TheFODM452andFODM453optocouplersconsistofanAlGaAs LEDopticallycoupledtoahighspeedphoto−detectortransistor.The devicesarehousedinacompact5−pinminiflatpackageforoptimum mountingdensity. TheFODM453featuresahighCMRratingforoptimumcommon modetran | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
5-PinMiniFlatPackageHighSpeedTransistorOptocoupler | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
BIDIRECTIONALEMISSIONTYPEINFRAREDLIGHTEMITTINGDIODE BidirectionalEmissionTypeInfraredLightEmittingDiode Applications 1.Lightsourcefortape-enddetectorsofVHStypeVCRs | SHARPSharp Microelectronics of the Americas (SMA) 夏普微美国夏普微电子公司（SMA） | SHARP | ||
SmallOutline,5Lead,HighSpeedOptocouplers Description ThesesmalloutlinehighCMR,highspeed,diode-transistoroptocouplersaresinglechanneldevicesinafiveleadminiaturefootprint.TheyareelectricallyequivalenttothefollowingAgilentoptocouplers: TheSO-5JEDECregistered(MO-155)packageoutlinedoesnotrequire“through | HPAgilent(Hewlett-Packard) 安捷伦科技安捷伦科技有限公司 | HP | ||
HCPL-M452/HCPL-M453SmallOutline,5Lead,HighSpeedOptocouplers Description ThesesmalloutlinehighCMR,highspeed,diode-transistoroptocouplersaresinglechanneldevicesinafiveleadminiaturefootprint.TheyareelectricallyequivalenttothefollowingAvagooptocouplers: TheSO-5JEDECregistered(MO-155)packageoutlinedoesnotrequire“throughho | AVAGOAvago 安华高安华高科技 | AVAGO | ||
GaAsDC-6GHzSPDTSwitch Description TheHWS452isaGaAsPHEMTMMICSPDTswitchoperatingatDC-6GHzinalowcostminiatureSON6L(2x3mm)plasticlead(Pb)freepackage.TheHWS452featureslowinsertionlossandhighisolationwithverylowDCpowerconsumption.ThisswitchcanbeusedinIEEE802.11a/b/gWLANPC | HWHexawave, Inc Hexawave, Inc | HW | ||
Diagonal9.04mm(Type1/1.8)5.13M-PixelCCDImageSensorforHigh-ResolutionDigitalStillCameras Diagonal9.04mm(Type1/1.8)5.13M-PixelCCDImageSensor forHigh-ResolutionDigitalStillCameras Theneedsforhigherpixelcountsandfurtherminiaturizationareincreasinginthedigitalstillcameramarketthathasbeenexperiencingrapidandcontinuousgrowthforseveralyears.Son | SonySONY 索尼 | Sony | ||
Diagonal9.04mm(Type1/1.8)5.13M-PixelCCDImageSensorforHigh-ResolutionDigitalStillCameras Diagonal9.04mm(Type1/1.8)5.13M-PixelCCDImageSensor forHigh-ResolutionDigitalStillCameras Theneedsforhigherpixelcountsandfurtherminiaturizationareincreasinginthedigitalstillcameramarketthathasbeenexperiencingrapidandcontinuousgrowthforseveralyears.Son | SonySONY 索尼 | Sony | ||
Diagonal9.04mm(Type1/1.8)5.13M-PixelCCDImageSensorforHigh-ResolutionDigitalStillCameras Diagonal9.04mm(Type1/1.8)5.13M-PixelCCDImageSensor forHigh-ResolutionDigitalStillCameras Theneedsforhigherpixelcountsandfurtherminiaturizationareincreasinginthedigitalstillcameramarketthathasbeenexperiencingrapidandcontinuousgrowthforseveralyears.Son | SonySONY 索尼 | Sony | ||
N-CHANNELPOWERMOSFETS FEATURES •LowRds(on))athighvoltage •ImprovedInductiveruggedness •Excellenthighvoltagestability •Fastswitchingtimes •Ruggedpolysillcongatecellstructure •LowInputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability •TO-3package(Highv | SamsungSamsung Group 三星三星半导体 | Samsung | ||
N-CHANNEPOWERMOSFETS FEATURES •LowRds(on))athighvoltage •ImprovedInductiveruggedness •Excellenthighvoltagestability •Fastswitchingtimes •Ruggedpolysillcongatecellstructure •LowInputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability •TO-3package(Highv | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-CHANNELPOWERMOSFETS
| SamsungSamsung Group 三星三星半导体 | Samsung | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
Computerterminals | ISOCOM Isocom Components 2004 LTD | ISOCOM | ||
HIGHDENSITYMOUNTINGHIGHVOLTAGEDARLINGTONOPTICALLYCOUPLEDISOLATORS | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=40A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.28Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRITION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC |
产品属性
- 产品编号：
AFBR-452BZ
- 制造商：
Broadcom Limited
- 类别：
连接器，互连器件 > 光纤连接器组件
- 系列：
AFBR
- 包装：
散装
- 连接器类型：
插头
- 单工/双工：
双工
- 模式：
POF
- 安装类型：
自由悬挂
- 紧固类型：
销锁
- 外壳颜色：
蓝色
- 描述：
CONN FIBER PLUG DUPLEX
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
BRO |
22+ |
ORIGINAL |
25800 |
原装正品,品质保证,值得你信赖. |
询价 | ||
BROADCOM |
2308+ |
263596 |
一级代理,原装正品,公司现货! |
询价 | |||
Broadcom |
22+ |
NA |
80 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
Broadcom/Avago |
23+ |
21500 |
询价 | ||||
BROADCOM |
23+ |
NA |
100 |
现货!就到京北通宇商城 |
询价 | ||
Broadcom(博通) |
22+ |
* |
25000 |
原装现货,价格优惠,假一罚十 |
询价 | ||
Broadcom(博通) |
* |
6 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | |||
Broadcom(博通) |
* |
6 |
全新原装,支持实单,假一罚十,德创芯微 |
询价 | |||
Broadcom(博通) |
* |
106 |
全新原装 实单必成 |
询价 | |||
BRO |
2021+ |
SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 |
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