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ADP3120AJRZ-RL集成电路(IC)栅极驱动器规格书PDF中文资料
厂商型号 |
ADP3120AJRZ-RL |
参数属性 | ADP3120AJRZ-RL 封装/外壳为8-SOIC(0.154",3.90mm 宽);包装为管件;类别为集成电路(IC) > 栅极驱动器;产品描述:IC GATE DRVR HALF-BRIDGE 8SOIC |
功能描述 | Dual Bootstrapped, 12 V MOSFET Driver with Output Disable |
文件大小 |
132.78 Kbytes |
页面数量 |
8 页 |
生产厂商 | ON Semiconductor |
企业简称 |
ONSEMI【安森美半导体】 |
中文名称 | 安森美半导体公司官网 |
原厂标识 | |
数据手册 | |
更新时间 | 2024-5-18 18:30:00 |
ADP3120AJRZ-RL规格书详情
The ADP3120A is a single Phase 12 V MOSFET gate drivers optimized to drive the gates of both high−side and low−side power MOSFETs in a synchronous buck converter. The high−side and low−side driver is capable of driving a 3000 pF load with a 45 ns propagation delay and a 25 ns transition time.
With a wide operating voltage range, high or low side MOSFET gate drive voltage can be optimized for the best efficiency. Internal adaptive nonoverlap circuitry further reduces switching losses by preventing simultaneous conduction of both MOSFETs.
The floating top driver design can accommodate VBST voltages as high as 35 V, with transient voltages as high as 40 V. Both gate outputs can be driven low by applying a low logic level to the Output Disable (OD) pin. An Undervoltage Lockout function ensures that both driver outputs are low when the supply voltage is low, and a Thermal Shutdown function provides the IC with overtemperature protection.
Features
• All−In−One Synchronous Buck Driver
• Bootstrapped High−Side Drive
• One PWM Signal Generates Both Drives
• Anticross Conduction Protection Circuitry
• OD for Disabling the Driver Outputs Meets CPU VR Requirement when Used with Patented FlexMode™ Controller
• These are Pb−Free Devices
Applications
• Multiphase Desktop CPU Supplies
• Single−Supply Synchronous Buck Converters
ADP3120AJRZ-RL属于集成电路(IC) > 栅极驱动器。安森美半导体公司制造生产的ADP3120AJRZ-RL栅极驱动器栅极驱动器电源管理集成电路 (PMIC) 可用于提供隔离、放大、参考位移、自举或其他必要功能,这些功能可将来自电源转换应用中控制设备的信号连接到电源被控制通过的半导体设备(通常为 FET 或 IGBT)。任何特定设备提供的确切功能各不相同,但与它适合驱动的半导体配置相关。
产品属性
- 产品编号:
ADP3120AJRZ-RL
- 制造商:
onsemi
- 类别:
集成电路(IC) > 栅极驱动器
- 包装:
管件
- 驱动配置:
半桥
- 通道类型:
同步
- 栅极类型:
N 沟道 MOSFET
- 电压 - 供电:
4.6V ~ 13.2V
- 逻辑电压 - VIL,VIH:
0.8V,2V
- 输入类型:
反相,非反相
- 上升/下降时间(典型值):
20ns,11ns
- 工作温度:
-20°C ~ 150°C(TJ)
- 安装类型:
表面贴装型
- 封装/外壳:
8-SOIC(0.154",3.90mm 宽)
- 供应商器件封装:
8-SOIC
- 描述:
IC GATE DRVR HALF-BRIDGE 8SOIC
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
只做原装 |
21+ |
SOP |
36520 |
一级代理/放心采购 |
询价 | ||
ON/安森美 |
22+ |
SO-8 |
6000 |
只做原装,假一赔十 |
询价 | ||
ON |
14+ |
SOP8 |
352 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
ON/安森美 |
24+ |
SOIC |
860000 |
明嘉莱只做原装正品现货 |
询价 | ||
ON/安森美 |
21+ |
SO-8 |
10000 |
100%进口原装正品现货,公司原装现货众多欢迎加微信咨 |
询价 | ||
ON |
24+ |
SOIC-8 |
25000 |
ON全系列可订货 |
询价 | ||
ON |
2023+ |
SOP8 |
700000 |
柒号芯城跟原厂的距离只有0.07公分 |
询价 | ||
AD |
23+ |
SOP8 |
65600 |
询价 | |||
ON/安森美 |
21+ |
SO-8 |
10000 |
全新原装现货 |
询价 | ||
ON/安森美 |
2023+ |
NA |
5956 |
询价 |