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FCX619

NPNSiliconPowerSwitchingTransistor

Features ●2Wpowerdissipation. ●6Apeakpulsecurrent. ●ExcellentHFEcharacteristicsupto6amps. ●ExtremelylowsaturationvoltageE.g.13mvTyp. ●Extremelylowequivalenton-resistance. RCE(sat)87mΩat2.75A.

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

FCX619

SOT89NPNSILICONPOWER

Features •BVCEO>50V •IC=3AHighContinuousCollectorCurrent •ICMupto6APeakPulseCurrent •2WPowerDissipation •LowSaturationVoltageVCE(sat)

DIODESDiodes Incorporated

达尔科技

FCX619

SOT89NPNSILICONPOWER(SWITCHING)TRANSISTOR

Zetex

Zetex Semiconductors

FCX619

NPNSILICONPOWER(SWITCHING)TRANSISTOR

FEATURES *2WPOWERDISSIPATION *6APEAKPULSECURRENT *EXCELLENThFECHARACTERISTICSUPTO6Amps *EXTREMELYLOWSATURATIONVOLTAGEe.g.13mVtyp. *EXTREMELYLOWEQUIVALENTON-RESISTANCE; *RCE(sat)87mΩat2.75A COMPLIMENTARYTYPE-FCX720 PARTMARKINGDETAIL-619

Zetex

Zetex Semiconductors

FCX619TA

50VNPNLOWSATURATIONPOWERTRANSISTORINSOT89

DIODESDiodes Incorporated

达尔科技

FMMT619

NPNTransistors

■Features ●CollectorCurrentCapabilityIC=2A ●CollectorEmitterVoltageVCEO=50V ●ComplementarytoFMMT720

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

FMMT619

NPNSILICONPOWER(SWITCHING)TRANSISTORS

FEATURES *625mWPOWERDISSIPATION *ICCONT3A *12APeakPulseCurrent *ExcellentHFECharacteristicsUpTo12A(pulsed) *ExtremelyLowSaturationVoltageE.g.8mVTyp. *ExtremelyLowEquivalentOnResistance;RCE(sat)

Zetex

Zetex Semiconductors

FMMT619

SOT23NPNSILICONPOWER

Features •BVCEO>15V •IC=3AhighContinuousCollectorCurrent •ICM=12APeakPulseCurrent •RCE(sat)=50mΩforalowequivalentOn-Resistance •625mWPowerdissipation •hFEspecifiedupto12Aforhighcurrentgainholdup •ComplementaryPNPType:FMMT717 •TotallyLead-Free&am

DIODESDiodes Incorporated

达尔科技

FMMT619QTA

50VNPNSILICONLOWSATURATIONTRANSISTORINSOT23

Features •BVCEO>50V •IC=2AContinuousCollectorCurrent •625mWpowerdissipation •LowSaturationVoltageVCE(sat)

DIODESDiodes Incorporated

达尔科技

FMMT619QTA

50VNPNSILICONLOWSATURATIONTRANSISTORINSOT23

DIODESDiodes Incorporated

达尔科技

FMMT619TA

50VNPNSILICONLOWSATURATIONTRANSISTORINSOT23

Features •BVCEO>50V •IC=2AContinuousCollectorCurrent •625mWpowerdissipation •LowSaturationVoltageVCE(sat)

DIODESDiodes Incorporated

达尔科技

FMMT619TA

50VNPNSILICONLOWSATURATIONTRANSISTORINSOT23

DIODESDiodes Incorporated

达尔科技

FMMT619TC

50VNPNSILICONLOWSATURATIONTRANSISTORINSOT23

DIODESDiodes Incorporated

达尔科技

FMMTL619

SOT23NPNSILICONPLANARHIGHGAIN

Features •BVCEO>50V •IC=1.25AContinuousCollectorCurrent •500mWPowerDissipation •LowSaturationVoltageVCE(sat)

DIODESDiodes Incorporated

达尔科技

FMMTL619

MediumPowerTransistor

Features ●Verylowequivalenton-resistance;RCE(sat)=160mÙat1.25A.

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

FMMTL619

NPNSILICONPLANARHIGHGAINMEDIUMPOWERTRANSISTOR

FEATURES Verylowequivalenton-resistance;RCE(sat)=160mΩat1.25A

Zetex

Zetex Semiconductors

FMMTL619

SOT23NPNSILICONPLANARHIGHGAINMEDIUMPOWERTRANSISTOR

Zetex

Zetex Semiconductors

FMMTL619TA

SOT23NPNSILICONPLANARHIGHGAINMEDIUMPOWERTRANSISTOR

etc2List of Unclassifed Manufacturers

etc2未分类制造商

FSB619

NPNLow-SaturationTransistor

ONSEMION Semiconductor

安森美半导体安森美半导体公司

FSB619

NPNLowSaturationTransistor

NPNLowSaturationTransistor Thesedevicesaredesignedwithhighcurrentgainandlowsaturationvoltagewithcollectorcurrentsupto3Acontinuous.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

详细参数

  • 型号:

    ADG619BRT-REEL

  • 制造商:

    Analog Devices

  • 制造商:

    Rochester Electronics LLC

供应商型号品牌批号封装库存备注价格
ADI
2339+
±5V5OhmSPDT(
6521
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
ADI/亚德诺
21+
原封装
13880
公司只售原装,支持实单
询价
ADI/亚德诺
22+
66900
原封装
询价
AD
13+
SOT23-8
3150
特价热销现货库存
询价
ad
16+
原厂封装
10000
全新原装正品,代理优势渠道供应,欢迎来电咨询
询价
ADI(亚德诺)
23+
SOT238
7350
原装进口,原厂直销!当天可交货,支持原型号开票!
询价
Analog Devices Inc.
24+
SOT-23-8
9350
独立分销商,公司只做原装,诚心经营,免费试样正品保证
询价
23+
N/A
96000
一级代理放心采购
询价
ADI
2016+
SOT23-8
3526
假一罚十进口原装现货原盘原标!
询价
ADI
SOT23-8
2930
正品原装--自家现货-实单可谈
询价
更多ADG619BRT-REEL供应商 更新时间2024-5-31 14:02:00