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HCS374K

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

Description TheIntersilHCS374MSisaRadiationHardenednon-invertingoctalD-type,positiveedgetriggeredflip-flopwiththree-stateableoutputs.TheHCS374MSutilizesadvancedCMOS/SOStechnology.Theeightflip-flopsenterdataintotheirregistersontheLOW-to-HIGHtransitionoftheclock

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HCS374K

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

Features •3MicronRadiationHardenedSOSCMOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

HCS374K/SAMPLE

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HCS374KMSR

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HCS374KMSR

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

Description TheIntersilHCS374MSisaRadiationHardenednon-invertingoctalD-type,positiveedgetriggeredflip-flopwiththree-stateableoutputs.TheHCS374MSutilizesadvancedCMOS/SOStechnology.Theeightflip-flopsenterdataintotheirregistersontheLOW-to-HIGHtransitionoftheclock

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HCS374KMSR

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

Features •3MicronRadiationHardenedSOSCMOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

HCS374MS

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

Features •3MicronRadiationHardenedSOSCMOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

HCS374MS

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HCS374MS

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

Description TheIntersilHCS374MSisaRadiationHardenednon-invertingoctalD-type,positiveedgetriggeredflip-flopwiththree-stateableoutputs.TheHCS374MSutilizesadvancedCMOS/SOStechnology.Theeightflip-flopsenterdataintotheirregistersontheLOW-to-HIGHtransitionoftheclock

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HCT374

OCTALEDGE-TRIGGEREDD-TYPEFLIP-FLOPS

TI1Texas Instruments(TI)

德州仪器德州仪器 (TI)

HCT-374

HighCurrentToroidalInductors

API

API Delevan Inc.

HCTR-374

HighCurrentToroidalInductors

API

API Delevan Inc.

HCTS374D

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

Features •3MicronRadiationHardenedSOSCMOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

HCTS374D

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

Description TheIntersilHCTS374MSisaRadiationHardenednon-invertingoctalD-type,positiveedgetriggeredflip-flopwiththree-stateableoutputs.Theeightflip-flopsenterdataintotheirregistersontheLOW-to-HIGHtransitionoftheclock(CP).Dataisalsotransferredtotheoutputsduri

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HCTS374DMSR

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

Description TheIntersilHCTS374MSisaRadiationHardenednon-invertingoctalD-type,positiveedgetriggeredflip-flopwiththree-stateableoutputs.Theeightflip-flopsenterdataintotheirregistersontheLOW-to-HIGHtransitionoftheclock(CP).Dataisalsotransferredtotheoutputsduri

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HCTS374DMSR

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

Features •3MicronRadiationHardenedSOSCMOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

HCTS374DTR

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered Intersil’sSatelliteApplicationsFlowTM(SAF)devicesarefullytestedandguaranteedto100kRADtotaldose.TheseQMLClassTdevicesareprocessedtoastandardflowintendedtomeetthecostandshorterlead-time

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HCTS374HMSR

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

Description TheIntersilHCTS374MSisaRadiationHardenednon-invertingoctalD-type,positiveedgetriggeredflip-flopwiththree-stateableoutputs.Theeightflip-flopsenterdataintotheirregistersontheLOW-to-HIGHtransitionoftheclock(CP).Dataisalsotransferredtotheoutputsduri

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HCTS374HMSR

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

Features •3MicronRadiationHardenedSOSCMOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

HCTS374K

RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered

Features •3MicronRadiationHardenedSOSCMOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

详细参数

  • 型号:

    ACTF374

  • 制造商:

    ACT

  • 制造商全称:

    Advanced Crystal Technology

  • 功能描述:

    low-loss, compact, and economical surface-acoustic-wave(SAW) filter

供应商型号品牌批号封装库存备注价格
ACT
23+
原厂原包
19960
只做进口原装 终端工厂免费送样
询价
更多ACTF374供应商 更新时间2024-5-25 8:02:00