| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
RadiationHardenedOctalTransparentLatch,Three-State Features •3MicronRadiationHardenedSOSCMOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
RadiationHardenedOctalTransparentLatch,Three-State Description TheIntersilHCS573MSisaRadiationHardenedoctaltransparentthree-statelatchwithanactivelowoutputenable.TheHCS573MSutilizesadvancedCMOS/SOStechnology. Features •3MicronRadiationHardenedSOSCMOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100ME | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
RadiationHardenedOctalTransparentLatch,Three-State Description TheIntersilHCS573MSisaRadiationHardenedoctaltransparentthree-statelatchwithanactivelowoutputenable.TheHCS573MSutilizesadvancedCMOS/SOStechnology. Features •3MicronRadiationHardenedSOSCMOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100ME | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
RadiationHardenedOctalTransparentLatch,Three-State Features •3MicronRadiationHardenedSOSCMOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
RadiationHardenedOctalTransparentLatch,Three-State Features •3MicronRadiationHardenedSOSCMOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
RadiationHardenedOctalTransparentLatch,Three-State Description TheIntersilHCS573MSisaRadiationHardenedoctaltransparentthree-statelatchwithanactivelowoutputenable.TheHCS573MSutilizesadvancedCMOS/SOStechnology. Features •3MicronRadiationHardenedSOSCMOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100ME | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
RadiationHardenedOctalTransparentLatch,Three-State Description TheIntersilHCS573MSisaRadiationHardenedoctaltransparentthree-statelatchwithanactivelowoutputenable.TheHCS573MSutilizesadvancedCMOS/SOStechnology. Features •3MicronRadiationHardenedSOSCMOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100ME | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
RadiationHardenedOctalTransparentLatch,Three-State Features •3MicronRadiationHardenedSOSCMOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
RadiationHardenedOctalTransparentLatch,Three-State Features •3MicronRadiationHardenedSOSCMOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
RadiationHardenedOctalTransparentLatch,Three-State Description TheIntersilHCS573MSisaRadiationHardenedoctaltransparentthree-statelatchwithanactivelowoutputenable.TheHCS573MSutilizesadvancedCMOS/SOStechnology. Features •3MicronRadiationHardenedSOSCMOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100ME | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
RadiationHardenedOctalTransparentLatch,Three-State Description TheIntersilHCS573MSisaRadiationHardenedoctaltransparentthree-statelatchwithanactivelowoutputenable.TheHCS573MSutilizesadvancedCMOS/SOStechnology. Features •3MicronRadiationHardenedSOSCMOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100ME | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
RadiationHardenedOctalTransparentLatch,Three-State Features •3MicronRadiationHardenedSOSCMOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
OCTALTRANSPARENTD-TYPELATCHESWITH3-STATEOUTPUTS | TITexas Instruments 德州仪器美国德州仪器公司 | TI | ||
OCTALTRANSPARENTD-TYPELATCHESWITH3-STATEOUTPUTS | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) | TI1 | ||
DotMatrixDisplays5x7Bi-ColorGeneralPurposeDotMatrixDisplays53.2mm(2.09inch)Package | HPAgilent(Hewlett-Packard) 安捷伦科技安捷伦科技有限公司 | HP | ||
5x7GeneralPurposeDotMatrixDisplays53.2mm(2.09Inch)Package | HPAgilent(Hewlett-Packard) 安捷伦科技安捷伦科技有限公司 | HP | ||
OCTALTRANSPARENTD-TYPELATCHESWITH3-STATEOUTPUTS | TI1Texas Instruments(TI) 德州仪器德州仪器 (TI) | TI1 |
晶体管资料
- 型号：
- 别名：
三极管、晶体管、晶体三极管
- 生产厂家：
- 制作材料：
Si-PNP
- 性质：
低频或音频放大 （LF）
- 封装形式：
直插封装
- 极限工作电压：
70V
- 最大电流允许值：
0.5A
- 最大工作频率：
<1MHZ或未知
- 引脚数：
3
- 可代换的型号：
ACY39,ASY48,3AK34A,
- 最大耗散功率：
- 放大倍数：
β=110
- 图片代号：
C-47
- vtest：
70
- htest：
999900
- atest：
.5
- wtest：
0
详细参数
- 型号：
AC573
- 制造商：
TI
- 制造商全称：
Texas Instruments
- 功能描述：
OCTAL D-TYPE TRANSPARENT LATCHES WITH 3-STATE OUTPUTS
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MOT |
23+ |
SOP7.2 |
2000 |
全新原装深圳仓库现货有单必成 |
询价 | ||
HARRIS |
99+ |
SOP-20P |
5 |
询价 | |||
HARRIS |
22+ |
SOP20 |
3378 |
绝对原装公司现货供应!价格优势 |
询价 | ||
TI |
23+ |
SOP20 |
7635 |
全新原装优势 |
询价 | ||
TI |
00/01+ |
SOP |
100 |
全新原装100真实现货供应 |
询价 | ||
MOT |
23+ |
SSOP |
9526 |
询价 | |||
TI |
22+23+ |
SOP |
35597 |
绝对原装正品全新进口深圳现货 |
询价 | ||
ON/安森美 |
22+ |
12322 |
原装正品现货 |
询价 | |||
ON/安森美 |
19+ |
SOP |
16200 |
原装正品,现货特价 |
询价 | ||
ON/安森美 |
1922+ |
SOP |
6852 |
只做原装正品现货!或订货假一赔十! |
询价 |
