FDB8447L

40VN-ChannelPowerTrenchMOSFET

FDB8447L

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=50A@TC=25℃ ·DrainSourceVoltage :VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=8.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

FDD8447L

N-channelEnhancementModePowerMOSFET

Features VDS=40V,ID=80A RDS(ON)

FDD8447L

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=50A@TC=25℃ ·DrainSourceVoltage :VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=8.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

FDD8447L

40VN-ChannelMOSFET

Features *Vds=60V,ID=53A *Rosion=12ma@Ves=10v *Rosion=17m0@Ves=4.5V

FDD8447L

FastSwitching

GeneralDescription ThisN-ChannelMOSFEThasbeenproducedusingFairchildSemiconductor’sproprietaryPowerTrench®technologytodeliverlowrDS(on)andoptimizedBVDSScapabilitytooffersuperiorperformancebenefitintheapplication. Features ■MaxrDS(on)=8.5mΩatVGS=10V,ID=14A

FDP8447L

iscN-ChannelMOSFETTransistor

FDP8447L

N-ChannelPowerTrench짰MOSFET40V,50A,8.7m廓

FDP8447L

N-Channel4-V(D-S)MOSFET

FDS8447

SingleN-ChannelPowerTrenchMOSFET

GeneralDescription ThissingleN-ChannelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrench®processthathasbeenespeciallytailoredtominimizetheon-stateresistanceandyetmaintainsuperiorswitchingperformance. Features ■MaxrDS(on)=10.5mΩatVGS=10V,ID=12

FDS8447-NL

N-Channel100-V(D-S)MOSFET

NDH8447

P-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistanceandprovidesuperiorswitchingperformance.Thes

SI8447DB

P-Channel20-V(D-S)MOSFET