零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
P-CHANNELPOWERMOSFETS FEATURES •LowRDS(on) •Improvedinductiveruggedness •Fsatswitchingtimes •Ruggedpolysilicongatecellstructure •Lowinputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability | SamsungSamsung Group 三星三星半导体 | Samsung | ||
PowerMOSFET(Vdss=-100V,Rds(on)=0.117ohm,Id=-23A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
19A,100V,0.200Ohm,P-ChannelPowerMOSFETs TheseareP-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
PowerMOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
P-CHANNELPOWERMOSFETS Description TheIRF9540,IRF9541,IRF9542,IRF9543,RF1S9540,andRF1S9540SMareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseareP-Channelenhancementmodesilicongatepowerfieldeffecttran | HARRIS HARRIS corporation | HARRIS | ||
AdvancedProcessTechnology Description TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipationlevelstoapproximately50watts.ThelowthermalresistanceandlowpackagecostoftheTO-220contributetoitswideacceptancethroughouttheindustry. ●AdvancedProcessTe | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
P-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PowerMOSFET(Vdss=-100V,Rds(on)=0.117ohm,Id=-23A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
PowerMOSFET(Vdss=-100V,Rds(on)=0.117ohm,Id=-23A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AdvancedProcessTechnology Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleon-resistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowinter | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
iscP-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HEXFETPOWERMOSFET(VDSS=-100V,RDS(on)=117m廓,ID=-23A) Description Featuresofthisdesignarea150°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombinetomakethisdesignanextremelyefficientandreliabledeviceforuseinawidevarietyofotherapplications. ●AdvancedProces | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HEXFET짰PowerMOSFET
| IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AdvancedProcessTechnology
| KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
ADVANCEDPROCESSTECHNOLOGY | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
iscP-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
AdvancedProcessTechnology | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET(Vdss=-100V,Rds(on)=0.117ohm,Id=-23A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
AdvancedProcessTechnology | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HEXFETPOWERMOSFET(VDSS=-100V,RDS(on)=117m廓,ID=-23A) Description Featuresofthisdesignarea150°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombinetomakethisdesignanextremelyefficientandreliabledeviceforuseinawidevarietyofotherapplications. ●AdvancedProces | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
S |
2021+ |
SOP16 |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
询价 | ||
06/07+ |
SOP |
2000 |
询价 | ||||
ST |
2339+ |
SOP |
4231 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
询价 | ||
ST |
2021+ |
SOP |
6540 |
原装现货/欢迎来电咨询 |
询价 | ||
3M |
21+ |
NA |
1780 |
中国航天工业部战略合作伙伴行业领导者 |
询价 | ||
ST |
23+ |
SOP |
2000 |
现货或发货一天 |
询价 | ||
N/A |
23+ |
80000 |
专注配单,只做原装进口现货 |
询价 | |||
N/A |
23+ |
80000 |
专注配单,只做原装进口现货 |
询价 | |||
TE connectivity |
SOIC-16 |
瑞智芯 只做原装 |
75 |
询价 | |||
TE connectivity |
21+ |
SOIC-16 |
75 |
全新原装鄙视假货15118075546 |
询价 |
相关规格书
更多- 95640W6
- 97C2051
- 98-0244
- 9933
- 9953
- 9P-50594B
- A1010B
- A1015
- A1020B-PL68C
- A1020B-PL84C
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- A1600
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- A290011TL-70
- A2917SEB
- A2919SLB
- A2C20219
- A3120
- A314J
- A316J
- A3545
- A3548
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- A3933SEQ
- A3952SB
- A3952SW
- A3953SLB
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- A3956SLB-24
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- A3966SLBTR
- A3972SB
- A3977SED
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