MTD8N06E

TMOSPOWERFET8.0AMPERES60VOLTSRDS(on)=0.12OHM

TMOSE-FETPowerFieldEffectTransistorDPAKforSurfaceMount N–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecoveryt

MTP8N06

TMOSPOWERFET8.0AMPERES60VOLTSRDS(on)=0.12OHM

MTP8N06

N-Channel60V(D-S)MOSFET

MTP8N06E

TMOSPOWERFET8.0AMPERES60VOLTSRDS(on)=0.12OHM

PHT8N06

TrenchMOStransistorStandardlevelFET

GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.Using’trench’technolgythedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotection.ItisintendedforuseinDC

PHT8N06LT

TrenchMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotection.ItisintendedforuseinDC-DCconvertersandgenera

PHT8N06LT

TrenchMOSÔtransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmodelogic levelfield-effectpowertransistorina plasticenvelopesuitableforsurface mounting.Thedevicefeaturesvery lowon-stateresistanceandhas integralzenerdiodesgivingESD protection.Itisintendedforusein DC-DCconvertersand

PHT8N06T

TrenchMOStransistorStandardlevelFET

GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.Using’trench’technolgythedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotection.ItisintendedforuseinDC

STD8N06

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.21Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■APPLICATIONORIENTED CHARACTERIZATION ■TH