零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
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7Amps,650Volts7Amps,650Volts DESCRIPTION TheUTC7N65isahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsin | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
7.4Amps,650VoltsN-CHANNELPOWERMOSFET | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
7Amps,650VoltsN-CHANNELMOSFET FEATURE ●7A,650V,RDS(ON)=1.4Ω@VGS=10V/3.5A ●Lowgatecharge ●LowCiss ●Fastswitching ●100avalanchetested ●Improveddv/dtcapability | CHONGQINGCHONGQING PINGYANG ELECTRONICS CO.,LTD 重庆平伟实业重庆平伟实业股份有限公司 | CHONGQING | ||
N-Channel650V(D-S)PowerMOSFET FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Serverandtelecompowersupplies •Switchmodepowersupplies(SMPS) •Powerfactorcorrection | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
650VN-ChannelPowerMOSFET Features ●RDS(ON) | DYELECDIYI Electronic Technology Co., Ltd. 迪一电子山东迪一电子科技有限公司 | DYELEC | ||
N-CHANNELPOWERMOSFET ■DESCRIPTION 7N607N65isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinswitch | ZSELECZibo Seno Electronic Engineering Co.,Ltd 淄博圣诺电子淄博圣诺电子工程有限公司 | ZSELEC | ||
DrainCurrentID=7A@TC=25C •FEATURES •DrainCurrentID=7A@TC=25℃ •DrainSourceVoltage :VDSS=650V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=1.35Ω(Max)@VGS=10V •AvalancheEnergySpecified •FastSwitching •APPLICATIONS •Highspeedswitchingapplicationsinpowersupplies •PWM | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
7.4A,650VN-CHANNELPOWERMOSFET | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
N-CHANNELPOWERMOSFET Features ●RDS(ON) | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 | SUNMATE | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET Description 650VN-CHANNELENHANCEMENTMODEPOWERMOSFET Features RDS(ON)=1.27Ω(Max.)@VGS=10V,ID=3.5A Fastswitching 100avalanchetested Improveddv/dtcapability Application DC-DC&DC-ACConverters UninterruptiblePowerSupply(UPS) SwitchModeLowPowerSu | TUOFENGShenzhen Tuofeng Semiconductor Technology Co 拓锋半导体深圳市拓锋半导体科技有限公司 | TUOFENG | ||
N-channelpowerMOStube Features *VDS(V)=650V *RDS(ON) | UMWUMW 友台友台半导体 | UMW | ||
7A650VN-channelenhancementmodefieldeffecttransistor 7A650VN-channelenhancementmodefieldeffecttransistor Performancecharacteristics: ♦Fastswitchingspeed ♦Lowon-resistance ♦Lowreversetransfercapacitance ♦Lowgatecharge ♦100singlepulseavalancheenergytest ♦Improveddv/dtcapability | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | YFWDIODE | ||
7A,650VN-CHANNELPOWERMOSFET DESCRIPTION TheUTC7N65AisahighvoltageN-Channelenhancementmodepowerfieldeffecttransistorsdesignedtohaveminimizeon-stateresistance,superiorswitchingperformanceandwithstandhighenergypulseintheavalancheandcommutationmode.ThispowerMOSFETiswellsuitedforhigheffi | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
7Amps,650VoltsN-CHANNELMOSFET FEATURE ●7A,650V,RDS(ON)=1.4Ω@VGS=10V/3.5A ●Lowgatecharge ●LowCiss ●Fastswitching ●100avalanchetested ●Improveddv/dtcapability | CHONGQINGCHONGQING PINGYANG ELECTRONICS CO.,LTD 重庆平伟实业重庆平伟实业股份有限公司 | CHONGQING | ||
650VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-CHANNELPOWERMOSFET Features ●RDS(ON) | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 | SUNMATE | ||
N-CHANNELPOWERMOSFET Features ●RDS(ON) | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 | SUNMATE | ||
7Amps,650VoltsN-CHANNELMOSFET FEATURE ●7A,650V,RDS(ON)=1.4Ω@VGS=10V/3.5A ●Lowgatecharge ●LowCiss ●Fastswitching ●100avalanchetested ●Improveddv/dtcapability | CHONGQINGCHONGQING PINGYANG ELECTRONICS CO.,LTD 重庆平伟实业重庆平伟实业股份有限公司 | CHONGQING | ||
N-channelpowerMOStube Features *VDS(V)=650V *RDS(ON) | UMWUMW 友台友台半导体 | UMW | ||
N-CHANNELJUNCTIONFIELDEFFECTTRANSISTOR DESCRIPTION TheUTC7N65-FisahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplications | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
UTC/友顺 |
22+23+ |
TO-263 |
85192 |
新到货全新原装诚信经营 |
询价 | ||
友顺UTC |
2019 |
TO-220F1 |
55000 |
UTC原装正品 |
询价 | ||
UTC/友顺 |
2021+ |
TO-220F1 |
110000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
询价 | ||
UTC |
22+ |
TO220F |
25000 |
原装现货,价格优惠,假一罚十 |
询价 | ||
UTC |
2220+ |
TO220F |
1688 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
UTC(友顺) |
22+ |
N/A |
35 |
全新原装 |
询价 | ||
UTC |
2023+ |
TO220F |
700000 |
柒号芯城跟原厂的距离只有0.07公分 |
询价 | ||
UTC |
24+ |
TO220F |
9000 |
只做原装正品 有挂有货 假一赔十 |
询价 | ||
23+ |
N/A |
59000 |
一级代理放心采购 |
询价 | |||
UTC |
1822+ |
TO-220 |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
询价 |
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