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UPD754304

4-BITSINGLE-CHIPMICROCONTROLLER

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

UPD754304

MOSINTEGRATEDCIRCUIT

FEATURES •Low-voltageoperation:VDD=1.8to5.5V •Internalmemory Programmemory(ROM): 2048×8bits(μPD754302,754302(A)) 4096×8bits(μPD754304,754304(A)) Datamemory(RAM):256×4bits •Variableinstructionexecutiontimeeffectiveforhighspeed operationandpowersaving 0

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

UPD754304A

4-BITSINGLE-CHIPMICROCONTROLLER

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

UPD754304GS

4-BITSINGLE-CHIPMICROCONTROLLER

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

UPD754304GSA

4-BITSINGLE-CHIPMICROCONTROLLER

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

UPD754304GS-XXX

MOSINTEGRATEDCIRCUIT

FEATURES •Low-voltageoperation:VDD=1.8to5.5V •Internalmemory Programmemory(ROM): 2048×8bits(μPD754302,754302(A)) 4096×8bits(μPD754304,754304(A)) Datamemory(RAM):256×4bits •Variableinstructionexecutiontimeeffectiveforhighspeed operationandpowersaving 0

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

UPD754304GS-XXX-A

MOSINTEGRATEDCIRCUIT

FEATURES •Low-voltageoperation:VDD=1.8to5.5V •Internalmemory Programmemory(ROM): 2048×8bits(μPD754302,754302(A)) 4096×8bits(μPD754304,754304(A)) Datamemory(RAM):256×4bits •Variableinstructionexecutiontimeeffectiveforhighspeed operationandpowersaving 0

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
供应商型号品牌批号封装库存备注价格
5000
公司存货
询价
NO
23+
SSOP-32
8239
优势库存
询价
22+
TSOP36
3629
原装优势!房间现货!欢迎来电!
询价
NEC
23+
SO-36-5.2
35890
询价
MOLEX
08+
136
公司优势库存 热卖中!
询价
YAZAKI/矢崎
22+
SMD
518000
明嘉莱只做原装正品现货
询价
23+
N/A
49400
正品授权货源可靠
询价
VB
2019
TO-263AB
55000
绝对原装正品假一罚十!
询价
VBSEMI
19+
TO-263AB
29600
绝对原装现货,价格优势!
询价
Kings Electronics
2308+
462301
一级代理,原装正品,公司现货!
询价
更多754304供应商 更新时间2024-4-28 16:00:00