零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
PowerMOSFET(Vdss=30V,Id=12A) SMPSMOSFET Benefits •LowGatetoDrainChargetoReduce SwitchingLosses •FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) •FullyCharacterizedAvalancheVoltage andCurrent Applications •HighfrequencyDC-DCconverters | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
7000SeriesMiniatureToggleSwitches | CK-COMPONENTS C&K Components | CK-COMPONENTS | ||
P-Channel100-V(D-S)MOSFET | AnalogPower Analog Power | AnalogPower | ||
20VP-ChannelMOSFET | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
P-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheAO7413usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatecharge,andoperationwithgatevoltagesaslowas1.8V,inthesmallSOT323footprint.Itcanbeusedforawidevarietyofapplications,includingloadswitching,lowcurrentinvertersandlow | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
P-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheAO7413usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatecharge,andoperationwithgatevoltagesaslowas1.8V,inthesmallSOT323footprint.Itcanbeusedforawidevarietyofapplications,includingloadswitching,lowcurrentinvertersandlow | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
TTLHD74/HD74SSeries
| HitachiHitachi, Ltd. 日立公司 | Hitachi | ||
N-ChannelMOSFET ■Features ●VDS(V)=30V ●ID=12A(VGS=10V) ●RDS(ON) | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | KEXIN | ||
PowerMOSFET(Vdss=30V,Id=12A) SMPSMOSFET Benefits •LowGatetoDrainChargetoReduce SwitchingLosses •FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) •FullyCharacterizedAvalancheVoltage andCurrent Applications •HighfrequencyDC-DCconverters | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
GenerationVTechnology GenerationVTechnology UltraLowOn-Resistance N-ChannelMosfet SurfaceMount AvailableinTape&Reel Dynamicdv/dtRating FastSwitching 100RgTested Lead-Free Application Features VDS(V)=30V RDS(ON)12m(VGS=10V) RDS(ON)17m(VGS=4.5V) | UMWUMW 友台友台半导体 | UMW | ||
PowerMOSFET(Vdss=30V,Rds(on)=0.0135ohm) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
UltraLowOn-Resistance | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
GenerationVTechnology | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
ULTARLOWONRESISTANCE | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HEXFETPowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HEXFETPowerMOSFET Description TheseHEXFET®PowerMOSFETsinSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFETsarea150°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveaval | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
UltraLowOn-Resistance SMPSMOSFET Benefits •LowGatetoDrainChargetoReduce SwitchingLosses •FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) •FullyCharacterizedAvalancheVoltage andCurrent Applications •HighfrequencyDC-DCconverters | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
GenerationVTechnology GenerationVTechnology UltraLowOn-Resistance N-ChannelMosfet SurfaceMount AvailableinTape&Reel Dynamicdv/dtRating FastSwitching 100RgTested Lead-Free Application Features VDS(V)=30V RDS(ON)12m(VGS=10V) RDS(ON)17m(VGS=4.5V) | UMWUMW 友台友台半导体 | UMW | ||
fastsuitching | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
N-Channel20V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ITT |
74 |
28 |
原装正品现货供应 |
询价 | |||
SIGN |
23+ |
NA |
9856 |
原装正品,假一罚百! |
询价 | ||
23+ |
N/A |
49100 |
正品授权货源可靠 |
询价 | |||
ITT |
最新 |
28 |
原装正品 现货供应 价格优 |
询价 | |||
TI/德州仪器 |
23+ |
DIP14 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
ITT |
23+ |
589610 |
新到现货 原厂一手货源 价格秒杀代理! |
询价 | |||
7413N |
5 |
5 |
询价 | ||||
TI |
DIP14 |
608900 |
原包原标签100%进口原装常备现货! |
询价 | |||
TI/德州仪器 |
23+ |
DIP14 |
20000 |
原装正品 欢迎咨询 |
询价 | ||
TI/德州仪器 |
23+ |
NA/ |
1200 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 |
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