71V124SA10YGI规格书应用电路贸易商集成器-114ic电子网

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71V124SA10PHG	文件：192.06 Kbytes Page：9 Pages	3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
71V124SA10PHGI	文件：192.06 Kbytes Page：9 Pages	3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
71V124SA10TYG	文件：192.06 Kbytes Page：9 Pages	3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
71V124SA10YG	文件：192.06 Kbytes Page：9 Pages	3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
IDT71V124SA10	文件：81.33 Kbytes Page：8 Pages	3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
IDT71V124SA10PH	文件：81.33 Kbytes Page：8 Pages	3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
IDT71V124SA10PHI	文件：81.33 Kbytes Page：8 Pages	3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
IDT71V124SA10TY	文件：81.33 Kbytes Page：8 Pages	3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
IDT71V124SA10TYI	文件：81.33 Kbytes Page：8 Pages	3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
IDT71V124SA10Y	文件：81.33 Kbytes Page：8 Pages	3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
IDT71V124SA10YI	文件：81.33 Kbytes Page：8 Pages	3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市博正芯科技有限公司	71V124SA10YGI	IDT, Integrated Device Technol	21+	NA	11200	正品专卖,进口原装深圳现货	询价
深圳市鹏顺微电子科技有限公司	71V124SA10YGI	INTEGRATED DEVICE TECHNOLOGY	2022+	原厂原包装	8600	全新原装支持表配单中国著名电子元器件独立分销	询价
深圳市粤骏腾电子科技有限公司	71V124SA12PH	IDT	23+		254	现货供应	询价
瀚佳科技(深圳)有限公司	71V124SA12PH	IDT	2020+	TSOP	16800	绝对原装进口现货,假一赔十,价格优势!?	询价
深圳市冠亿通科技有限公司	71V124SA12PH	IDT,	21+		25000	原厂原包深圳现货主打品牌假一赔百可开票!	询价
深圳市芯为科技有限公司	71V124SA12PH	IDT	2023+	TSOP	16800	芯为只有原装,公司现货	询价
深圳市艾宇欣科技有限公司	71V124SA12PHG	IDT	1931+	N/A	356	加我qq或微信，了解更多详细信息,体验一站式购物	询价
深圳市科雨电子有限公司	71V124SA12PHG	IDT	20+	SSOP-32	4854	就找我吧!--邀您体验愉快问购元件!	询价
万三科技(深圳)有限公司	71V124SA12PHG	RENESAS(瑞萨电子)	22+	NA	500000	万三科技,秉承原装,购芯无忧	询价
深圳市易讯博科技有限公司	71V124SA12PHG	IDT	22+	NA	356	加我QQ或微信咨询更多详细信息,	询价

更多71V124SA10YGI供应商更新时间2024-6-2 10:02:00

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