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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
7164S20DB	文件：213.71 Kbytes Page：12 Pages	CMOS Static RAM 64K (8K x 8-Bit) Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
7164S20DGI	文件：749.13 Kbytes Page：10 Pages	CMOSStaticRAM64K	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
7164S20TDB	文件：213.71 Kbytes Page：12 Pages	CMOSStaticRAM64K(8Kx8-Bit) Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
7164S20TDGI	文件：749.13 Kbytes Page：10 Pages	CMOSStaticRAM64K	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
7164S20TPG	文件：213.71 Kbytes Page：12 Pages	CMOSStaticRAM64K(8Kx8-Bit) Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
7164S20TPGI	文件：213.71 Kbytes Page：12 Pages	CMOSStaticRAM64K(8Kx8-Bit) Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
7164S20TPGI	文件：749.13 Kbytes Page：10 Pages	CMOSStaticRAM64K	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
7164S20YG	文件：213.71 Kbytes Page：12 Pages	CMOSStaticRAM64K(8Kx8-Bit) Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
7164S20YGI	文件：749.13 Kbytes Page：10 Pages	CMOSStaticRAM64K	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
7164S20YGI	文件：213.71 Kbytes Page：12 Pages	CMOSStaticRAM64K(8Kx8-Bit) Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
IDT7164S20D	文件：104.93 Kbytes Page：9 Pages	CMOSSTATICRAM64K(8Kx8-BIT) Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
IDT7164S20DB	文件：104.93 Kbytes Page：9 Pages	CMOSSTATICRAM64K(8Kx8-BIT) Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
IDT7164S20P	文件：104.93 Kbytes Page：9 Pages	CMOSSTATICRAM64K(8Kx8-BIT) Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
IDT7164S20PB	文件：104.93 Kbytes Page：9 Pages	CMOSSTATICRAM64K(8Kx8-BIT) Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
IDT7164S20TD	文件：104.93 Kbytes Page：9 Pages	CMOSSTATICRAM64K(8Kx8-BIT) Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
IDT7164S20TDB	文件：104.93 Kbytes Page：9 Pages	CMOSSTATICRAM64K(8Kx8-BIT) Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
IDT7164S20TP	文件：104.93 Kbytes Page：9 Pages	CMOSSTATICRAM64K(8Kx8-BIT) Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
IDT7164S20TPB	文件：104.93 Kbytes Page：9 Pages	CMOSSTATICRAM64K(8Kx8-BIT) Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
IDT7164S20Y	文件：104.93 Kbytes Page：9 Pages	CMOSSTATICRAM64K(8Kx8-BIT) Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
IDT7164S20YB	文件：104.93 Kbytes Page：9 Pages	CMOSSTATICRAM64K(8Kx8-BIT) Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市科雨电子有限公司	7164S20DB	IDT	20+	DIP-28	169	就找我吧!--邀您体验愉快问购元件!	询价
万三科技(深圳)有限公司	7164S20DB	RENESAS(瑞萨电子)	22+	NA	500000	万三科技,秉承原装,购芯无忧	询价
深圳市大联智电子有限公司	7164S20DB	IDT, Integrated Device Technol	2022+	28-CDIP(0.600,15.24mm)	6680	原厂原装，欢迎咨询	询价
深圳市特顺芯科技有限公司	7164S20TP	IDT	1999	DIP	151		询价
上海鑫科润电子科技有限公司	7164S20TP	IDT	2000	DIP-28P	1930	原装现货海量库存欢迎咨询	询价
深圳市华睿芯科技有限公司	7164S20TP	IDT	23+	DIP28	20000	原厂原装正品现货	询价
深圳市维尔达电子有限公司	7164S20TP	IDT	2023+	DIP28	80000	一级代理/分销渠道价格优势十年芯程一路只做原装正品	询价
深圳兆威电子有限公司	7164S20TP	IDT	23+	DIP	90000	只做原厂渠道价格优势可提供技术支持	询价
深圳市恒达亿科技有限公司	7164S20TP	IDT	23+	DIP-28P	4500	全新原装、诚信经营、公司现货销售	询价
标准国际(香港)有限公司	7164S20TP	7164S20TP		84	84		询价

更多7164S20DB供应商更新时间2021-9-14 10:50:00

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