Features:

◆ True Dual-Port memory cells which allow simultaneous

access of the same memory location

◆ High-speed data access

– Commercial: 3.6ns (166MHz)/4.2ns (133MHz)(max.)

– Industrial: 4.2ns (133MHz) (max.)

◆ Selectable Pipelined or Flow-Through output mode

◆ Counter enable and repeat features

◆ Dual chip enables allow for depth expansion without

additional logic

◆ Interrupt and Collision Detection Flags

◆ Full synchronous operation on both ports

– 6ns cycle time, 166MHz operation (12Gbps bandwidth)

– Fast 3.6ns clock to data out

– 1.5ns setup to clock and 0.5ns hold on all control, data, and

address inputs @ 166MHz

– Data input, address, byte enable and control registers

– Self-timed write allows fast cycle time

◆ Separate byte controls for multiplexed bus and bus

matching compatibility

◆ Dual Cycle Deselect (DCD) for Pipelined Output Mode

◆ 2.5V (±100mV) power supply for core

◆ LVTTL compatible, selectable 3.3V (±150mV) or 2.5V

(±100mV) power supply for I/Os and control signals on

each port

◆ Includes JTAG functionality

◆ Industrial temperature range (-40°C to +85°C) is

available at 133MHz

◆ Available in a 256-pin Ball Grid Array (BGA)

◆ Green parts available, see ordering information

70T3539MS133BCGI属于集成电路（IC） > 存储器。瑞萨科技有限公司制造生产的70T3539MS133BCGI存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。