首页 >70T3339S133BCI>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
70T3339S133BCI | HIGH-SPEED 2.5V 512/256/128K X 18 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE Features: ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speeddataaccess –Commercial:3.4(200MHz)/3.6ns(166MHz)/ 4.2ns(133MHz)(max.) –Industrial:4.2ns(133MHz)(max.) ◆SelectablePipelinedorFlow-Throughoutputmode ◆Counterenab | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | |
70T3339S133BCI | 包装：托盘 封装/外壳：256-LBGA 类别：集成电路（IC） 存储器 描述：IC SRAM 9MBIT PARALLEL 256CABGA | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | |
HIGH-SPEED 2.5V 512/256/128K X 18 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE Features: ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speeddataaccess –Commercial:3.4(200MHz)/3.6ns(166MHz)/ 4.2ns(133MHz)(max.) –Industrial:4.2ns(133MHz)(max.) ◆SelectablePipelinedorFlow-Throughoutputmode ◆Counterenab | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
包装：托盘 封装/外壳：256-LBGA 类别：集成电路（IC） 存储器 描述：IC SRAM 9MBIT PARALLEL 256CABGA | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
HIGH-SPEED2.5V512/256/128KX18SYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE Features: ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speeddataaccess –Commercial:3.4(200MHz)/3.6ns(166MHz)/ 4.2ns(133MHz)(max.) –Industrial:4.2ns(133MHz)(max.) ◆SelectablePipelinedorFlow-Throughoutputmode ◆Counterenab | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
HIGH-SPEEDSYNCHRONOUSDUAL-PORTSTATICRAM | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
HIGH-SPEED2.5VSYNCHRONOUSDUAL-PORTSTATICRAM | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
HIGH-SPEEDSYNCHRONOUSDUAL-PORTSTATICRAM | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
HIGH-SPEED2.5VSYNCHRONOUSDUAL-PORTSTATICRAM | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
HIGH-SPEED2.5V512/256/128KX18SYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE Features: ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speeddataaccess –Commercial:3.4(200MHz)/3.6ns(166MHz)/ 4.2ns(133MHz)(max.) –Industrial:4.2ns(133MHz)(max.) ◆SelectablePipelinedorFlow-Throughoutputmode ◆Counterenab | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
HIGH-SPEED2.5VSYNCHRONOUSDUAL-PORTSTATICRAM | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
HIGH-SPEEDSYNCHRONOUSDUAL-PORTSTATICRAM | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
HIGH-SPEEDSYNCHRONOUSDUAL-PORTSTATICRAM | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
HIGH-SPEED2.5VSYNCHRONOUSDUAL-PORTSTATICRAM | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
HIGH-SPEED2.5V512/256/128KX18SYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE Features: ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speeddataaccess –Commercial:3.4(200MHz)/3.6ns(166MHz)/ 4.2ns(133MHz)(max.) –Industrial:4.2ns(133MHz)(max.) ◆SelectablePipelinedorFlow-Throughoutputmode ◆Counterenab | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
HIGH-SPEED2.5V512/256/128KX18SYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE Features: ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speeddataaccess –Commercial:3.4(200MHz)/3.6ns(166MHz)/ 4.2ns(133MHz)(max.) –Industrial:4.2ns(133MHz)(max.) ◆SelectablePipelinedorFlow-Throughoutputmode ◆Counterenab | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
HIGH-SPEED2.5V512/256/128KX18SYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
HIGH-SPEED2.5V512/256/128KX18SYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
HIGH-SPEED2.5V512/256/128KX18SYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
HIGH-SPEED2.5V512/256/128KX18SYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT |
产品属性
- 产品编号：
70T3339S133BCI
- 制造商：
Renesas Electronics America Inc
- 类别：
集成电路（IC） > 存储器
- 包装：
托盘
- 存储器类型：
易失
- 存储器格式：
SRAM
- 技术：
SRAM - 双端口，同步
- 存储容量：
9Mb（512K x 18）
- 存储器接口：
并联
- 电压 - 供电：
2.4V ~ 2.6V
- 工作温度：
-40°C ~ 85°C（TA）
- 安装类型：
表面贴装型
- 封装/外壳：
256-LBGA
- 供应商器件封装：
256-CABGA（17x17）
- 描述：
IC SRAM 9MBIT PARALLEL 256CABGA
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS(瑞萨) |
23+ |
256-CABGA (17.00L X 17.00W X 1 |
60 |
全新、原装 |
询价 | ||
IDT |
2019 |
SMD |
324554 |
原装进口现货 |
询价 | ||
IDT, Integrated Device Technol |
21+ |
208-LFBGA |
5280 |
进口原装!长期供应!绝对优势价格(诚信经营 |
询价 | ||
IDT, Integrated Device Technol |
21+ |
256-CABGA(17x17) |
56200 |
一级代理/放心采购 |
询价 | ||
IDT |
1931+ |
N/A |
1186 |
加我qq或微信，了解更多详细信息,体验一站式购物 |
询价 | ||
IDT |
20+ |
BGA-256 |
12 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
Renesas |
21+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
询价 | |||
RENESAS(瑞萨电子) |
22+ |
NA |
500000 |
万三科技,秉承原装,购芯无忧 |
询价 | ||
IDT |
22+ |
NA |
1186 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
IDT, Integrated Device Techno |
2022+ |
256-CABGA(17x17) |
7300 |
原装现货 |
询价 |
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