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IC61LV12816-12B

128Kx16HightSpeedSRAMwith3.3V

DESCRIPTION TheICSIIC61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith

ICSI

矽成

IC61LV12816-12BI

128Kx16HightSpeedSRAMwith3.3V

DESCRIPTION TheICSIIC61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith

ICSI

矽成

IC61LV12816-12K

128Kx16HightSpeedSRAMwith3.3V

DESCRIPTION TheICSIIC61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith

ICSI

矽成

IC61LV12816-12KI

128Kx16HightSpeedSRAMwith3.3V

DESCRIPTION TheICSIIC61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith

ICSI

矽成

IC61LV12816-12T

128Kx16HightSpeedSRAMwith3.3V

DESCRIPTION TheICSIIC61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith

ICSI

矽成

IC61LV12816-12TI

128Kx16HightSpeedSRAMwith3.3V

DESCRIPTION TheICSIIC61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingICSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith

ICSI

矽成

IS61LV12816-12B

128Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith

ISSIIntegrated Silicon Solution Inc

ISSI公司ISSI有限公司

IS61LV12816-12B

128Kx16HIGH-SPEEDCMOSSTATICRAM

DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswi

ICSI

矽成

IS61LV12816-12B

128Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith

ISSIIntegrated Silicon Solution Inc

ISSI公司ISSI有限公司

IS61LV12816-12BI

128Kx16HIGH-SPEEDCMOSSTATICRAM

DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswi

ICSI

矽成

IS61LV12816-12BI

128Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith

ISSIIntegrated Silicon Solution Inc

ISSI公司ISSI有限公司

IS61LV12816-12K

128Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith

ISSIIntegrated Silicon Solution Inc

ISSI公司ISSI有限公司

IS61LV12816-12K

128Kx16HIGH-SPEEDCMOSSTATICRAM

DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswi

ICSI

矽成

IS61LV12816-12K

128Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith

ISSIIntegrated Silicon Solution Inc

ISSI公司ISSI有限公司

IS61LV12816-12KI

128Kx16HIGH-SPEEDCMOSSTATICRAM

DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswi

ICSI

矽成

IS61LV12816-12KI

128Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith

ISSIIntegrated Silicon Solution Inc

ISSI公司ISSI有限公司

IS61LV12816-12LQ

128Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith

ISSIIntegrated Silicon Solution Inc

ISSI公司ISSI有限公司

IS61LV12816-12LQ

128Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith

ISSIIntegrated Silicon Solution Inc

ISSI公司ISSI有限公司

IS61LV12816-12LQI

128Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith

ISSIIntegrated Silicon Solution Inc

ISSI公司ISSI有限公司

IS61LV12816-12LQI

128Kx16HIGH-SPEEDCMOSSTATICRAMWITH3.3VSUPPLY

DESCRIPTION TheISSIIS61LV12816isahigh-speed,2,097,152-bitstaticRAMorganizedas131,072wordsby16bits.ItisfabricatedusingISSIshigh-performanceCMOStechnology.Thishighlyreliableprocesscoupledwithinnovativecircuitdesigntechniques,yieldsaccesstimesasfastas8nswith

ISSIIntegrated Silicon Solution Inc

ISSI公司ISSI有限公司

供应商型号品牌批号封装库存备注价格
SI
23+
NA/
3412
原装现货,当天可交货,原型号开票
询价
ISSI
21+
TSOP
120000
长期代理优势供应
询价
ISSI
23+
TSSOP
9680
价格优势、原装现货、客户至上。欢迎广大客户来电查询
询价
ISSI
2013
TSSOP
10000
全新
询价
ISSI
22+
TSOP
2987
绝对全新原装现货供应!
询价
ISSI
22+
TSSOP
3000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
询价
ISSI
22+
TSSOP
25000
只有原装绝对原装,支持BOM配单!
询价
ISSI
22+
TSSOP
25000
只有原装原装,支持BOM配单
询价
ISS
256
询价
I
2122+
TSOP
9880
全新原装正品现货,优势渠道可含税,假一赔十
询价
更多61LV12816-12B供应商 更新时间2024-6-18 16:40:00