CEB41A2

N-ChannelEnhancementModeFieldEffectTransistor

CED41A2

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■20V,36A,RDS(ON)=20mΩ@VGS=4.5V. RDS(ON)=30mΩ@VGS=2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CEP41A2

N-ChannelEnhancementModeFieldEffectTransistor

CEU41A2

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■20V,36A,RDS(ON)=20mΩ@VGS=4.5V. RDS(ON)=30mΩ@VGS=2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CHM41A2NPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE20VoltsCURRENT40Ampere FEATURE *Smallflatpackage.(D2PAK) *HighdensitycelldesignforextremelylowRDS(ON). *Ruggedandreliable. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

CHM41A2PAPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE20VoltsCURRENT36Ampere FEATURE *Smallpackage.(TO-252A) *SuperhighdensecelldesignforextremelylowRDS(ON). *Highpowerandcurrenthandingcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.