4012005

Inductive Sensor – With Increased Temperature Range

Features ■Threadedbarrel,M30x1.5 ■Stainlesssteel,1.4301 ■Temperaturesupto+100°C ■DC2-wire,nom.8.2VDC ■Outputacc.toDINEN60947-5-6(NAMUR) ■Cableconnection ■ATEXcategoryII1G,ExZone0at temperaturesupto+80°C ■ATEXcategoryII2G.ExZone1 ■ATEXcategoryII1

4012006

Inductive Sensor – With Increased Temperature Range

Features ■Threadedbarrel,M18x1 ■Stainlesssteel,1.4301 ■Temperaturesupto+100°C ■DC2-wire,nom.8.2VDC ■Outputacc.toDINEN60947-5-6(NAMUR) ■Cableconnection ■ATEXcategoryII1G,ExZone0at temperaturesupto+80°C ■ATEXcategoryII2G.ExZone1 ■ATEXcategoryII1D

4012061

Inductive Sensor – With Increased Temperature Range

Features ■Threadedbarrel,M18x1 ■Stainlesssteel,1.4404 ■Fortemperaturesof-40°C…+100°C ■HighprotectionclassIP69Kforharsh environments ■Specialdouble-lipseal ■Protectionagainstallcommonacidicand alkalinecleaningagents ■Suitableforapplicationsinthefoodindustry

4012071

Inductive Sensor – With Increased Temperature Range

Features ■Threadedbarrel,M30x1.5 ■Stainlesssteel,1.4404 ■Fortemperaturesof-40°C…+100°C ■HighprotectionclassIP69Kforharsh environments ■Specialdouble-lipseal ■Protectionagainstallcommonacidicand alkalinecleaningagents ■Suitableforapplicationsinthefoodindustry

4012097

Inductive Sensor

Features ■Threadedbarrel,M12x1 ■Stainlesssteel,1.4301 ■DC2-wire,nom.8.2VDC ■Outputacc.toDINEN60947-5-6(NAMUR) ■Cableconnection Functionalprinciple Inductivesensorsdetectmetalobjects contactlessandwear-free.Forthis,theyusea high-frequencyelectromagneticACfie

CGH40120F

120W,RFPowerGaNHEMT

Description Cree’sCGH40120Fisanunmatched,galliumnitride(GaN)high electronmobilitytransistor(HEMT).TheCGH40120F,operating froma28voltrail,offersageneralpurpose,broadbandsolution toavarietyofRFandmicrowaveapplications.GaNHEMTsoffer highefficiency,highgainan

CGH40120F

120W,RFPowerGaNHEMT

CGH40120F-AMP

120W,RFPowerGaNHEMT

CGH40120F-TB

120W,RFPowerGaNHEMT

CGH40120P

120W,RFPowerGaNHEMT

CGH40120P

120W,RFPowerGaNHEMT

Description Wolfspeed’sCGH40120Pisanunmatched,galliumnitride(GaN) highelectronmobilitytransistor(HEMT).TheCGH40120P, operatingfroma28voltrail,offersageneralpurpose,broadband solutiontoavarietyofRFandmicrowaveapplications.GaN HEMTsofferhighefficiency,highga

CGH40120P-AMP

120W,RFPowerGaNHEMT

CGH40120P-TB

120W,RFPowerGaNHEMT

DSTF40120C

Highfrequencyoperation

FFS40120AF-DIE

SiliconCarbideSchottkyDiode

FFSH40120A

SiliconCarbideSchottkyDiode

FFSH40120A

SiliconCarbideSchottkyDiode

FPI40120

MINIBRIDGE25,40,50and60AMPEREBRIDGERECTIFIERS

MINIBRIDGE25,40,50and60AMPEREBRIDGERECTIFIERS INTEGRALLYMOLDED HEATSINKS PROVIDEVERYLOW THERMALRESISTANCE

FST40120

40AmpSchottkyBarrierRectifier

MPI40120

MINIBRIDGE25,40,50and60AMPEREBRIDGERECTIFIERS

MINIBRIDGE25,40,50and60AMPEREBRIDGERECTIFIERS INTEGRALLYMOLDED HEATSINKS PROVIDEVERYLOW THERMALRESISTANCE