首页 >3N50KG-TND-R>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
PowerMOStransistor GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelopefeaturinghighavalancheenergycapability,stableoff-statecharacteristics,fastswitchingandhighthermalcyclingperformancewithlowthermalresistance.IntendedforuseinSwitchedModePower | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
N-Channel650V(D-S)MOSFET FEATURES •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent •ComplianttoRoHSdirective2002/95/EC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
PowerMOStransistorsAvalancheenergyrated GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistor,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications. ThePHP3N50Eissupplied | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
N-Channel650V(D-S)MOSFET FEATURES •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent •ComplianttoRoHSdirective2002/95/EC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
PowerMOStransistorsAvalancheenergyrated GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistor,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications. ThePHX3N50Eissupplied | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
3A,450Vand500V,3Ohm,N-ChannelPowerMOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydrivers,anddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.These | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
3A,450Vand500V,3Ohm,N-ChannelPowerMOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydrivers,anddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.These | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
DSeriesPowerMOSFET | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
DSeriesPowerMOSFET | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
DSeriesPowerMOSFET FEATURES •Optimaldesign -Lowareaspecificon-resistance -Lowinputcapacitance(Ciss) -Reducedcapacitiveswitchinglosses -Highbodydioderuggedness -Avalancheenergyrated(UIS) •Optimalefficiencyandoperation -Lowcost -Simplegatedrivecircuitry -Lowfigure-of-merit( | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
DSeriesPowerMOSFET FEATURES •Optimaldesign -Lowareaspecificon-resistance -Lowinputcapacitance(Ciss) -Reducedcapacitiveswitchinglosses -Highbodydioderuggedness -Avalancheenergyrated(UIS) •Optimalefficiencyandoperation -Lowcost -Simplegatedrivecircuitry -Lowfigure-of-merit( | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
StarMOSTPowerMOSFET | Good-Ark Good-Ark | Good-Ark | ||
N-CHANNELenhancementmodepowermostransistor N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=2.5Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPEEDSWITCHING ■SWITCHMODEPOWERSUPPLIES(SMPS) | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
PowerMOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
N-Channel650V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
Surface-MountTMBS짰(TrenchMOSBarrierSchottky)Rectifier FEATURES •Verylowprofile-typicalheightof0.95mm •Idealforautomatedplacement •TrenchMOSSchottkytechnology •Lowpowerlosses,highefficiency •Lowforwardvoltagedrop •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeak of260°C •Materialcategorization:fordefinitionso | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
Idealforautomatedplacement | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
UTC |
23/22+ |
TO220F1 |
6000 |
20年老代理.原厂技术支持 |
询价 | ||
VB |
2019 |
TO-220F |
55000 |
绝对原装正品假一罚十! |
询价 | ||
UTC |
2020+ |
TO-220F |
46660 |
公司代理品牌,原装现货超低价清仓! |
询价 | ||
U |
TO-220F |
22+ |
6000 |
十年配单,只做原装 |
询价 | ||
UTC/友顺 |
2022+ |
TO-220F |
79999 |
询价 | |||
renesas |
2023+ |
TO-220F |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
UTC/友顺 |
2022+ |
TO-220F |
30000 |
进口原装现货供应,绝对原装 假一罚十 |
询价 | ||
UTC/友顺 |
2022+ |
TO-220F |
30000 |
进口原装现货供应,原装 假一罚十 |
询价 | ||
VBSEMI |
19+ |
TO-220F |
29600 |
绝对原装现货,价格优势! |
询价 | ||
UTC/友顺 |
20+ |
TO-220F |
32500 |
现货很近!原厂很远!只做原装 |
询价 |
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