| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
3N100E | TMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS(on) = 4.0 OHM ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesigna | MotorolaMotorola, Inc 摩托罗拉 |  | |
3N100E | TMOS POWER FET 3.0 AMPERES 1000 VOLTS TheD2PAKpackagehasthecapabilityofhousingalargerdiethananyexistingsurfacemountpackagewhichallowsittobeusedinapplicationsthatrequiretheuseofsurfacemountcomponentswithhigherpowerandlowerRDS(on)capabilities.ThishighvoltageMOSFETusesanadvancedterminations | MotorolaMotorola, Inc 摩托罗拉 | | |
NPN/PNPDUALEMITTERCHOPPERBI-POLARTRANSISTORS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 |  | ||
TO220PACKAGEMARKINGDESCRIPTION | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 |  | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | ||
TO220PACKAGEMARKINGDESCRIPTION | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | | ||
TO220FPACKAGEMARKINGDESCRIPTION | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
TO220FPACKAGEMARKINGDESCRIPTION | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | | ||
N-ChannelEnhancementModeMOSFET | DACO DACO |  | ||
PolarVHVTMPowerMOSFETN-ChannelEnhancementMode | IXYS IXYS Integrated Circuits Division |  | ||
N-ChannelEnhancementModePowerMOSFET | IXYS IXYS Integrated Circuits Division | | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=3.0A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.8Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andAC-DCmotorcontrols | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
PolarVHVTMPowerMOSFETN-ChannelEnhancementMode | IXYS IXYS Integrated Circuits Division | | ||
N-ChannelEnhancementModePowerMOSFET | IXYS IXYS Integrated Circuits Division | | ||
N-ChannelEnhancementModePowerMOSFET | IXYS IXYS Integrated Circuits Division | | ||
PolarVHVTMPowerMOSFETN-ChannelEnhancementMode | IXYS IXYS Integrated Circuits Division | | ||
HighEnergyPowerFET | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | ||
TMOSPOWERFET3.0AMPERES1000VOLTS TheD2PAKpackagehasthecapabilityofhousingalargerdiethananyexistingsurfacemountpackagewhichallowsittobeusedinapplicationsthatrequiretheuseofsurfacemountcomponentswithhigherpowerandlowerRDS(on)capabilities.ThishighvoltageMOSFETusesanadvancedterminations | MotorolaMotorola, Inc 摩托罗拉 | | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=3A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
UTC |
23/22+ |
TO220F |
6000 |
20年老代理.原厂技术支持 |
询价 | ||
UTC |
23+ |
TO-252 T/R |
90 |
现货库存,实单请给接受价格 |
询价 | ||
UTC |
23+ |
TO-252 T/R |
20000 |
原装正品价格优惠,志同道合共谋发展 |
询价 | ||
MOT |
23+ |
CAN |
2325 |
全新原装现货 |
询价 | ||
MOT |
2339+ |
CAN4 |
8985 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
询价 | ||
MOT |
2021+ |
CAN4 |
6540 |
原装现货/欢迎来电咨询 |
询价 | ||
MOT |
2022+ |
CAN4 |
2820 |
只售进口原装公司现货! |
询价 | ||
MOT |
2023+ |
CAN4 |
50000 |
原装现货 |
询价 | ||
23+ |
N/A |
90050 |
正品授权货源可靠 |
询价 | |||
VB |
2019 |
PG-TO263-3-2 |
55000 |
绝对原装正品假一罚十! |
询价 |
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