| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
310-E3 | Tilt-To-Load Drum Tumblers Feature Power-Tilt to Enable Easy, Floor-Level Loading | MORSEMorse Mfg. Co., Inc. 莫尔斯莫尔斯制造公司 | MORSE | |
Tilt-To-Load Drum Tumblers Feature Power-Tilt to Enable Easy, Floor-Level Loading | MORSEMorse Mfg. Co., Inc. 莫尔斯莫尔斯制造公司 | MORSE | ||
PowerMOSFET VDS(V)400 RDS(on)(Ω)VGS=10V3.6 Qg(Max.)(nC)17 Qgs(nC)3.4 Qgd(nC)8.5 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationpowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET DESCRIPTION ThirdgenerationpowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
Idealforautomatedplacement | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
Surface-MountTMBS짰(TrenchMOSBarrierSchottky)Rectifier FEATURES •Lowprofilepackage •Idealforautomatedplacement •TrenchMOSSchottkytechnology •Lowpowerlosses,highefficiency •Lowforwardvoltagedrop •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeak of260°C •Materialcategorization:fordefinitionsofcompliance pleasesee | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
2021+ |
TSSOP8 |
6540 |
原装现货/欢迎来电咨询 |
询价 | |||
GLENAIR |
2308+ |
392480 |
一级代理,原装正品,公司现货! |
询价 | |||
23+ |
N/A |
59000 |
一级代理放心采购 |
询价 | |||
23+ |
N/A |
59000 |
一级代理放心采购 |
询价 | |||
23+ |
220 |
现货供应 |
询价 | ||||
FAIRCHILD/仙童 |
23+ |
SOT23-6 |
15000 |
全新原装现货,价格优势 |
询价 | ||
维电斯/WEIDIANSI |
2021+ |
DIP3X10mm |
663710 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
询价 | ||
GLENAIR |
23+ |
NA |
39960 |
只做进口原装,终端工厂免费送样 |
询价 |
相关规格书
更多- 310-E3-50
- 310F2
- 310FH001C
- 310FH001M
- 310FJ001B
- 310FJ001G
- 310FJ001NF
- 310FS001C
- 310FS001M
- 310FS006B
- 310FS006G
- 310FS006NF
- 310J
- 310J101-14
- 310J101-20
- 310J101-28
- 310J101-34
- 310J101-44
- 310J101-60
- 310K
- 310-LM
- 310MS8GE
- 311
- 311
- 311
- 311-.10QCT-ND
- 3110
- 3110
- 31-10
- 31-10
- 311-0.0GRCT-ND
- 3-110-000
- 31100-0040
- 31100-0041
- 31100-0042
- 3-110-001
- 311-00051-01
- 311-00053-01
- 3-110-012
- 3-110-014
- 3-110-016
- 3-110-020
- 311-0021-0
- 311-0024-0
- 3-110-032
相关库存
更多- 310F2
- 310FH001B
- 310FH001G
- 310FH001NF
- 310FJ001C
- 310FJ001M
- 310FS001B
- 310FS001G
- 310FS001NF
- 310FS006C
- 310FS006M
- 310J
- 310J101-10
- 310J101-16
- 310J101-26
- 310J101-30
- 310J101-40
- 310J101-50
- 310J101-64
- 310-LE
- 310MS8GE
- 310X
- 311
- 311
- 311
- 311+
- 3110
- 3110
- 31-10
- 31-10
- 311-0.0JRCT-ND
- 31100-004
- 31100-0040
- 31100-0041
- 31100-0042
- 3-110-001
- 311-00052-01
- 3-110-010
- 3-110-013
- 3-110-015
- 311-0017-0
- 3-110-021
- 311-0023-0
- 3-110-031
- 3-110-032
