| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
BuildinBiasingCircuitMOSFETICUHFRFAmplifier Features •BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Lownoisecharacteristics;(NF=1.3dBtyp.atf=200MHz) •WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. | HitachiHitachi, Ltd. 日立公司 | Hitachi | ||
BaseboardforoneTMCM-301/TMCM-341andupto3TMCM-035 | TRINAMICTRINAMIC Motion Control GmbH & Co. KG. TRINAMIC Motion Control GmbH & Co. KG. | TRINAMIC | ||
BuiltinBiasingCircuitMOSFETICVHFRFAmplifier Features •BuiltinBiasingCircuit; Toreduceusingpartscost&PCboardspace. •Lownoisecharacteristics; (NF=1.3dBtyp.atf=200MHz) •WithstandingtoESD; BuiltinESDabsorbingdiode. Withstandupto200VatC=200pF,Rs=0conditions. •Provideminimoldpackag | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
BuildinBiasingCircuitMOSFETICUHFRFAmplifier Features •BuildinBiasingCircuit; Toreduceusingpartscost&PCboardspace. •Lownoisecharacteristics;(NF=1.3dBtyp.atf=200MHz) •WithstandingtoESD;BuildinESDabsorbingdiode. Withstandupto200VatC=200pF, Rs=0conditions. | HitachiHitachi, Ltd. 日立公司 | Hitachi | ||
BuiltinBiasingCircuitMOSFETICVHFRFAmplifier Features •BuiltinBiasingCircuit; Toreduceusingpartscost&PCboardspace. •Lownoisecharacteristics; (NF=1.3dBtyp.atf=200MHz) •WithstandingtoESD; BuiltinESDabsorbingdiode. Withstandupto200VatC=200pF,Rs=0conditions. •Provideminimoldpackag | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
BuiltinBiasingCircuitMOSFETICVHFRFAmplifier Features •BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Lownoisecharacteristics;(NF=1.3dBtyp.atf=200MHz) •WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. •Provideminimoldpackages;MPAK-4(SOT-1 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
BuildinBiasingCircuitMOSFETICUHFRFAmplifier Features •BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Lownoisecharacteristics;(NF=1.3dBtyp.atf=200MHz) •WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. | HitachiHitachi, Ltd. 日立公司 | Hitachi | ||
BuiltinBiasingCircuitMOSFETICVHFRFAmplifier Features •BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Lownoisecharacteristics;(NF=1.3dBtyp.atf=200MHz) •WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. •Provideminimoldpackages;MPAK-4(SOT-1 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
BaseboardforoneTMCM-301andupto3TMCM-035with24VI/Os | TRINAMICTRINAMIC Motion Control GmbH & Co. KG. TRINAMIC Motion Control GmbH & Co. KG. | TRINAMIC | ||
NPNEPITAXIALPLANARSILICONTRANSISTORS NPNEPITAXIALPLANARSILICONTRANSISTORS NPNSILICONLOW-AND-MEDIUMPOWERTRANSISTORS. | CDIL CDIL | CDIL | ||
BipolarNPNDeviceinaHermeticallysealedTO39 | SEME-LAB Seme LAB | SEME-LAB | ||
PNPSILICONAFMEDIUMPOWERAMPLIFIERS&SWITCHES NPNSILICONAFMEDIUMPOWERAMPLIFIERS&SWITCHES | MICRO-ELECTRONICS Micro Electronics | MICRO-ELECTRONICS | ||
SmallSignalTransistors
| CentralCentral Semiconductor Corp 美国中央半导体 | Central | ||
BA/BCSeries:1.5-6.0WattsSingleandDualOutputs FEATURES •InputπFilter •FullyRegulatedOutputs •IndustryStandardPinouts •5,12,24,28,and48VDCInputs •RippleandNoiseLessThan50mVpp •Input/OutputIsolation | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
23+ |
N/A |
38460 |
正品授权货源可靠 |
询价 | |||
VB |
2019 |
TSOP-6 |
55000 |
绝对原装正品假一罚十! |
询价 | ||
VBSEMI |
19+ |
TSOP-6 |
29600 |
绝对原装现货,价格优势! |
询价 | ||
GRAYHILL |
20+ |
开关元件 |
2896 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
Grayhill |
2308+ |
490963 |
一级代理,原装正品,公司现货! |
询价 | |||
0 |
2122+ |
9880 |
全新原装正品现货,优势渠道可含税,假一赔十 |
询价 | |||
CDE |
24+25+/26+27+ |
DIP-2.直插 |
96500 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
2021+ |
20000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
询价 | ||||
CDM |
9748 |
88 |
公司优势库存 热卖中! |
询价 | |||
CORNELL-DUBILIER |
新 |
79 |
全新原装 货期两周 |
询价 |
