2SK3560规格书原装现货科信电子KEXIN-114ic电子网

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2SK3560	文件：76.42 Kbytes Page：3 Pages	Silicon N-channel power MOSFET For PDP/For high-speed switching SiliconN-channelpowerMOSFET ForPDP/Forhigh-speedswitching ■Features •Lowon-resistance,lowQg •Highavalancheresistance	PanasonicPanasonic Corporation 松下松下电器	Panasonic
2SK3560	文件：44.04 Kbytes Page：2 Pages	Silicon N-channel power MOSFET Features ●Lowon-resistance,lowQg ●Highavalancheresistance ●Forhigh-speedswitching	KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司	KEXIN
2SK3561	文件：227.46 Kbytes Page：6 Pages	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (MOSVI) SwitchingRegulatorApplications •Lowdrain-sourceONresistance:RDS(ON)=0.75Ω(typ.) •Highforwardtransferadmittance:\|Yfs\|=6.5S(typ.) •Lowleakagecurrent:IDSS=100μA(VDS=500V) •Enhancementmode:Vth=2.0to4.0V(VDS=10V,ID=1mA)	TOSHIBAToshiba Semiconductor 东芝株式会社東芝	TOSHIBA
2SK3561	文件：1.58274 Mbytes Page：73 Pages	Bipolar Small-Signal Transistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBAToshiba Semiconductor 东芝株式会社東芝	TOSHIBA
2SK3562	文件：1.58274 Mbytes Page：73 Pages	Bipolar Small-Signal Transistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBAToshiba Semiconductor 东芝株式会社東芝	TOSHIBA
2SK3562	文件：232.96 Kbytes Page：6 Pages	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSVI) SwitchingRegulatorApplications •Lowdrain-sourceONresistance:RDS(ON)=0.9Ω(typ.) •Highforwardtransferadmittance:\|Yfs\|=5.0S(typ.) •Lowleakagecurrent:IDSS=100μA(VDS=600V) •Enhancementmode:Vth=2.0~4.0V(VDS=10V,ID=1mA)	TOSHIBAToshiba Semiconductor 东芝株式会社東芝	TOSHIBA
2SK3563	文件：348.59 Kbytes Page：3 Pages	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOS4) SwitchingRegulatorApplications •Lowdrain-sourceONresistance:RDS(ON)=1.35Ω(typ.) •Highforwardtransferadmittance:\|Yfs\|=3.5S(typ.) •Lowleakagecurrent:IDSS=100μA(max)(VDS=500V) •Enhancementmode:Vth=2.0to4.0V(VDS=10V,ID=1mA)	TOSHIBAToshiba Semiconductor 东芝株式会社東芝	TOSHIBA
2SK3563	文件：1.58274 Mbytes Page：73 Pages	Bipolar Small-Signal Transistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBAToshiba Semiconductor 东芝株式会社東芝	TOSHIBA
2SK3564	文件：94.43 Kbytes Page：3 Pages	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOS4) SwitchingRegulatorApplications •Lowdrain-sourceONresistance:RDS(ON)=3.7Ω(typ.) •Highforwardtransferadmittance:\|Yfs\|=2.6S(typ.) •Lowleakagecurrent:IDSS=100μA(VDS=720V) •Enhancement-mode:Vth=2.0~4.0V(VDS=10V,ID=1mA)	TOSHIBAToshiba Semiconductor 东芝株式会社東芝	TOSHIBA
2SK3564	文件：342.98 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor •DESCRITION •SwitchingVoltageRegulators •FEATURES •Lowdrain-sourceon-resistance:RDS(ON)=3.7Ω(typ.) •Enhancementmode:Vth=2.0to4.0V(VDS=10V,ID=1.0mA) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
2SK3564	文件：325.72 Kbytes Page：6 Pages	N-Channel Power MOSFET DESCRIPTION Theyaredesignedforuseinapplicationssuchasswitchedmodepowersupplies,DCtoDCconverters,motorcontrolcircuits,UPS,relaydriveandgeneralpurposeswitchingswitchingregulatorapplications. TheNell2SK3564isathree-terminalsilicondevicewithcurrentconductionca	NELLSEMINell Semiconductor Co., Ltd 尼爾半導體尼爾半導體股份有限公司	NELLSEMI
2SK3564	文件：1.58274 Mbytes Page：73 Pages	Bipolar Small-Signal Transistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBAToshiba Semiconductor 东芝株式会社東芝	TOSHIBA
2SK3565	文件：343.14 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor •DESCRITION •SwitchingVoltageRegulators •FEATURES •Lowdrain-sourceon-resistance:RDS(ON)=2.0Ω(typ.) •Enhancementmode:Vth=2.0to4.0V(VDS=10V,ID=1.0mA) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
2SK3565	文件：1.58274 Mbytes Page：73 Pages	Bipolar Small-Signal Transistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBAToshiba Semiconductor 东芝株式会社東芝	TOSHIBA
2SK3565	文件：341.87 Kbytes Page：3 Pages	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOS4) SwitchingRegulatorApplications •Lowdrain-sourceONresistance:RDS(ON)=2.0Ω(typ.) •Highforwardtransferadmittance:\|Yfs\|=4.5S(typ.) •Lowleakagecurrent:IDSS=100μA(VDS=720V) •Enhancementmode:Vth=2.0to4.0V(VDS=10V,ID=1mA)	TOSHIBAToshiba Semiconductor 东芝株式会社東芝	TOSHIBA
2SK3565	文件：218.78 Kbytes Page：6 Pages	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type, π-MOSIV SwitchingRegulatorApplications •Lowdrain-sourceONresistance:RDS(ON)=2.0Ω(typ.) •Highforwardtransferadmittance:\|Yfs\|=4.5S(typ.) •Lowleakagecurrent:IDSS=100μA(VDS=720V) •Enhancementmode:Vth=2.0to4.0V(VDS=10V,ID=1mA)	TOSHIBAToshiba Semiconductor 东芝株式会社東芝	TOSHIBA
2SK3565_V01	文件：218.78 Kbytes Page：6 Pages	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type, π-MOSIV SwitchingRegulatorApplications •Lowdrain-sourceONresistance:RDS(ON)=2.0Ω(typ.) •Highforwardtransferadmittance:\|Yfs\|=4.5S(typ.) •Lowleakagecurrent:IDSS=100μA(VDS=720V) •Enhancementmode:Vth=2.0to4.0V(VDS=10V,ID=1mA)	TOSHIBAToshiba Semiconductor 东芝株式会社東芝	TOSHIBA
2SK3566	文件：252.49 Kbytes Page：6 Pages	Switching Regulator Applications SwitchingRegulatorApplications •Lowdrain-sourceONresistance:RDS(ON)=5.6Ω(typ.) •Highforwardtransferadmittance:\|Yfs\|=2.0S(typ.) •Lowleakagecurrent:IDSS=100μA(VDS=720V) •Enhancement-mode:Vth=2.0~4.0V(VDS=10V,ID=1mA)	HitachiHitachi, Ltd. 日立公司	Hitachi
2SK3566	文件：249.24 Kbytes Page：6 Pages	Silicon N Channel MOS Type Switching Regulator Applications SwitchingRegulatorApplications •Lowdrain-sourceONresistance:RDS(ON)=5.6Ω(typ.) •Highforwardtransferadmittance:\|Yfs\|=2.0S(typ.) •Lowleakagecurrent:IDSS=100μA(VDS=720V) •Enhancement-mode:Vth=2.0~4.0V(VDS=10V,ID=1mA)	TOSHIBAToshiba Semiconductor 东芝株式会社東芝	TOSHIBA
2SK3566	文件：331.64 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor •DESCRITION •SwitchingVoltageRegulators •FEATURES •Lowdrain-sourceon-resistance:RDS(on)≤6.4Ω. •Enhancementmode:Vth=2.0to4.0V(VDS=10V,ID=1.0mA) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市特顺芯科技有限公司	2SK3560	PANASONIC	07+	TO-263	30000		询价
深圳市莱克讯科技有限公司	2SK3560	panasonic	2017+	TO-263	25899	深圳香港代理原装现货库存(美国-日本-台湾)可开正规增	询价
深圳市卓越微芯电子有限公司	2SK3560	Panason	2020+	TO263	5000	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市博浩通科技有限公司	2SK3560	panasoni	23+	TO-252	9500	专业优势供应	询价
深圳市永贝尔科技有限公司	2SK3560	KEXIN	23+	NA	19960	只做进口原装,终端工厂免费送样	询价
深圳市佳鑫美电子科技有限公司	2SK3560	panasonic	22+	SOT-263	2987	只售原装自家现货!诚信经营!欢迎来电	询价
深圳市鼎欣微电子有限公司	2SK3560	PANASO	21+	TO-252	30000	只做正品原装现货	询价
深圳市仟禧电子有限公司	2SK3560	PANASONIC/松下	22+	SOT-263	20000	保证原装正品,假一陪十	询价
深圳市安富世纪电子有限公司	2SK3560	Panasonic	21+	TO263	50000	全新原装正品现货,支持订货	询价
贸泽芯城（深圳）电子科技有限公司	2SK3560	PANASONIC/松下	2021+	TO263	5000	原厂授权代理,海外优势订货渠道。可提供大量库存,详	询价

更多2SK356供应商更新时间2024-4-28 16:30:00

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