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2SK3501-01

N-CHANNEL SILICON POWER MOSFET

Features Highspeedswitching Lowon-resistance Nosecondarybreadown Lowdrivingpower Avalanche-proof Applications Switchingregulators UPS(UninterruptiblePowerSupply) DC-DCconverters

FujiFUJI CORPORATION

株式会社FUJI

2SK3502

N CHANNEL SILICON POWER MOSET

■Features Highspeedswitching Lowon-resistance Nosecondarybreadown Lowdrivingpower Avalanche-proof ■Applications Switchingregulators UPS(UninterruptiblePowerSupply) DC-DCconverters

FujiFUJI CORPORATION

株式会社FUJI

2SK3502-01MR

N-CHANNEL SILICON POWER MOSFET

■Features Highspeedswitching Lowon-resistance Nosecondarybreadown Lowdrivingpower Avalanche-proof ■Applications Switchingregulators UPS(UninterruptiblePowerSupply) DC-DCconverters

FujiFUJI CORPORATION

株式会社FUJI

2SK3503

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

DESCRIPTION The2SK3503isanN-channelverticalMOSFET.Becauseitcanbedrivenbyavoltageaslowas1.5Vanditisnotnecessarytoconsideradrivecurrent,thisFETisidealasanactuatorforlow-currentportablesystemssuchasheadphonestereosandvideocameras. FEATURES •Automati

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

2SK3503

N-Channel MOSFET

■Features ●VDS(V)=16V ●ID=100mA(VGS=1.5V) ●RDS(ON)

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

2SK3503

MOS FIELD EFFECT TRANSISTOR

N-CHANNELMOSFIELDEFFECTTRANSISTOR FORHIGHSPEEDSWITCHING DESCRIPTION The2SK3503isanN-channelverticalMOSFET.Becauseitcanbe drivenbyavoltageaslowas1.5Vanditisnotnecessarytoconsider adrivecurrent,thisFETisidealasanactuatorforlow-currentportable syst

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

2SK3506

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

RelayDriveandDC-DCConverterApplications MotorDriveApplications •Lowdrain-sourceONresistance:RDS(ON)=16mΩ(typ.) •Highforwardtransferadmittance:|Yfs|=26S(typ.) •Lowleakagecurrent:IDSS=100µA(max)(VDS=30V) •Enhancement-model:Vth=1.5to3.0V(VDS=10V,

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

2SK3506

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

2SK3507

MOS Field Effect Transistor

FEATURES ●4.5Vdriveavailable ●Lowon-stateresistance RDS(on)1=45mΩMAX.(VGS=10V,ID=11A) ●Lowgatecharge QG=8.5nCTYP.(VDD=24V,VGS=10V,ID=22A) ●Built-inG-Sprotectiondiode ●Surfacemountpackageavailable

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

2SK3507

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The2SK3507isN-channelMOSFETdevicethatfeaturesalowon-stateresistanceandexcellentswitchingcharacteristics,designedforlowvoltagehighcurrentapplicationssuchasDC/DCconverterwithsynchronousrectifier FEATURES •4.5Vdriveavailable •Lowon-stateresistance

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

2SK3507

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3507isN-channelMOSFETdevicethatfeatures alowon-stateresistanceandexcellentswitchingcharacteristics, designedforlowvoltagehighcurrentapplicationssuchasDC/DC converterwithsynchronousrectifier. FEATURES •4.5V

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

2SK3507-ZK

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The2SK3507isN-channelMOSFETdevicethatfeaturesalowon-stateresistanceandexcellentswitchingcharacteristics,designedforlowvoltagehighcurrentapplicationssuchasDC/DCconverterwithsynchronousrectifier FEATURES •4.5Vdriveavailable •Lowon-stateresistance

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

2SK3507-ZK

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3507isN-channelMOSFETdevicethatfeatures alowon-stateresistanceandexcellentswitchingcharacteristics, designedforlowvoltagehighcurrentapplicationssuchasDC/DC converterwithsynchronousrectifier. FEATURES •4.5V

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

2SK3501

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

2SK3501-01

N-CHANNEL SILICON POWER MOSFET

FujiFUJI CORPORATION

株式会社FUJI

2SK3501-01

N-Channel 650V (D-S) Power MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

2SK3501-01_03

N-CHANNEL SILICON POWER MOSFET

FujiFUJI CORPORATION

株式会社FUJI

2SK3502-01MR

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

2SK350-3PI

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

2SK3504

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

详细参数

  • 型号:

    2SK350

  • 制造商:

    Fuji Electric

  • 功能描述:

    MOSFET, Power;N-Ch;VDSS 600V;RDS(ON) 0.58Ohm;ID +/-12A;TO-220AB;PD 195W;VGS +/-3

供应商型号品牌批号封装库存备注价格
FUJI/富士电机
17+
TO-220
31518
原装正品 可含税交易
询价
FUJI
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
FujiSemiconductor
5
全新原装 货期两周
询价
FUJI
1822+
TO-220AB
9852
只做原装正品假一赔十为客户做到零风险!!
询价
23+
N/A
45780
正品授权货源可靠
询价
FUJI
18+
TO-220AB
41200
原装正品,现货特价
询价
VB
2019
TO-220C
55000
绝对原装正品假一罚十!
询价
FUJI
2020+
TO-220
41420
公司代理品牌,原装现货超低价清仓!
询价
Fuji Semiconductor
2022+
1
全新原装 货期两周
询价
FUJI
2020+
TO-220AB
16800
绝对原装进口现货,假一赔十,价格优势!?
询价
更多2SK350供应商 更新时间2024-4-30 14:00:00