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2SK3430

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE

DESCRIPTION The2SK3430isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=7.3mΩMAX.(VGS=10V,ID=40A) RDS(on)2=15mΩMAX.(VGS=4V,ID=40A) •LowCiss:Ciss=2800pFTYP. •Bu

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

2SK3430

MOSFieldEffectTransistor

Features ●Superlowon-stateresistance: RDS(on)1=7.3mΩMAX.(VGS=10V,ID=40A) RDS(on)2=15mΩMAX.(VGS=4V,ID=40A) ●LowCiss:Ciss=2800pFTYP. ●Built-ingateprotectiondiode

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

2SK3430

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3430isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=7.3mΩMAX.(VGS=10V,ID=40A) RDS(on)2=15mΩMAX.(VGS=4V,ID=40A) •Lo

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

2SK3430

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

2SK3430

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半导体有限公司

2SK3430-S

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

2SK3430-S

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3430isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=7.3mΩMAX.(VGS=10V,ID=40A) RDS(on)2=15mΩMAX.(VGS=4V,ID=40A) •Lo

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

2SK3430-S

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE

DESCRIPTION The2SK3430isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=7.3mΩMAX.(VGS=10V,ID=40A) RDS(on)2=15mΩMAX.(VGS=4V,ID=40A) •LowCiss:Ciss=2800pFTYP. •Bu

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

2SK3430-Z

SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE

DESCRIPTION The2SK3430isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=7.3mΩMAX.(VGS=10V,ID=40A) RDS(on)2=15mΩMAX.(VGS=4V,ID=40A) •LowCiss:Ciss=2800pFTYP. •Bu

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

2SK3430-Z

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3430isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=7.3mΩMAX.(VGS=10V,ID=40A) RDS(on)2=15mΩMAX.(VGS=4V,ID=40A) •Lo

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

2SK3430-Z

iscN-ChannelMOSFETTransistor

•FEATURES •WithTO-263(D2PAK)packaging •Highspeedswitching •Lowgateinputresistance •Standardlevelgatedrive •Easytouse •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Powersupply •Switchi

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

2SK3430-ZJ

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3430isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=7.3mΩMAX.(VGS=10V,ID=40A) RDS(on)2=15mΩMAX.(VGS=4V,ID=40A) •Lo

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

2SK3430-ZJ

N-ChannelMOSFET

■Features ●VDSS=40V ●ID=80A(VGS=10V) ●RDS(ON)

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

详细参数

  • 型号:

    2SK3430-AZ

  • 制造商:

    Renesas Electronics

  • 功能描述:

    Nch 40V 80A 7.3m@10V TO220AB Bulk

  • 功能描述:

    Trans MOSFET N-CH 40V 80A 3-Pin(3+Tab) TO-220AB Cut Tape

供应商型号品牌批号封装库存备注价格
Renesas Electronics America
2022+
TO-220-3
38550
全新原装 支持表配单 中国著名电子元器件独立分销
询价
NEC
TO-220
货真价实,假一罚十
25000
询价
NEC
22+
TO-220
40256
本公司只做原装进口现货
询价
NEC
23+
TO-220
90000
只做原厂渠道价格优势可提供技术支持
询价
RENESAS/瑞萨
2022+
TO-220
79999
询价
RENESAS/瑞萨
新年份
TO-220
65890
一级代理原装正品现货,支持实单!
询价
NEC
08+(pbfree)
TO-262
8866
询价
NEC
23+
T0-262
35890
询价
NEC
23+
TO-262
7600
全新原装现货
询价
23+
N/A
46590
正品授权货源可靠
询价
更多2SK3430-AZ供应商 更新时间2024-5-21 8:24:00