| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
2SK320 | SILICON N-CHANNEL MOS FET (HIGH SPEED POWER SWITCHING) SILICONN-CHANNELMOSFETHIGHSPEEDPOWERSWITCHING | HitachiHitachi, Ltd. 日立公司 | Hitachi | |
2SK320 | Fast Switching Speed | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | |
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The2SK3204isN-ChannelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Lowon-stateresistance: RDS(on)1=34mΩ(MAX.)(VGS=10V,ID=8A) RDS(on)2=50mΩ(MAX.)(VGS=4V,ID=8A) •LowCiss:Ciss=940pF(T | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SK3204isN-ChannelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES •Lowon-stateresistance: RDS(on)1=34mΩMAX.(VGS=10V,ID=8A) RDS(on)2=50mΩMAX.(VGS=4V,ID= | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
Bipolar Small-Signal Transistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
Switching Regulator Applications DC?묭C Converter SwitchingRegulatorApplicationsDC−DCConverter,andMotorDriveApplications 4Vgatedrive Lowdrain−sourceONresistance:RDS(ON)=0.36Ω(typ.) Highforwardtransferadmittance:|Yfs|=4.5S(typ.) Lowleakagecurrent:IDSS=100µA(max)(VDS=150V) Enhancement−mode | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
Silicon N Channel MOS FET High Speed Power Switching Features •Lowon-resistance RDS=70mΩtyp. •Highspeedswitching •4Vgatedrivedevicecanbedrivenfrom5Vsource | HitachiHitachi, Ltd. 日立公司 | Hitachi | ||
Silicon N Channel MOS FET High Speed Power Switching Features •Lowon-resistanceRDS=35mΩtyp. •Highspeedswitching •4Vgatedrivedevicecanbedrivenfrom5Vsource | HitachiHitachi, Ltd. 日立公司 | Hitachi | ||
Silicon N Channel MOS FET High Speed Power Switching Features •Lowon-resistance RDS=40mΩtyp. •Highspeedswitching •4Vgatedrivedevicecanbedrivenfrom5Vsource | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
Silicon N Channel MOS FET High Speed Power Switching Features •Lowon-resistance RDS=40mΩtyp. •Highspeedswitching •4Vgatedrivedevicecanbedrivenfrom5Vsource | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
N-Channel 200 V (D-S) MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
isc N-Channel MOSFET Transistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
Silicon N Channel MOS Type Switching Regulator Applications DC−DC Converter, and Motor Drive Applications | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
Silicon N Channel MOS Type Switching Regulator Applications DC−DC Converter, and Motor Drive Applications | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
isc N-Channel MOSFET Transistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
Silicon N Channel MOS FET High Speed Power Switching | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS |
详细参数
- 型号：
2SK320
- 制造商：
HITACHI
- 制造商全称：
Hitachi Semiconductor
- 功能描述：
SILICON N-CHANNEL MOS FET(HIGH SPEED POWER SWITCHING)
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
reNESAS |
08PB |
60000 |
询价 | ||||
HIT |
1738+ |
TO-220 |
8529 |
科恒伟业!只做原装正品,假一赔十! |
询价 | ||
H |
23+ |
TOTO-220AB |
12300 |
全新原装真实库存含13点增值税票! |
询价 | ||
HIT |
2023+ |
TO-220AB |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
HIT |
2020+ |
TO-220AB |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
询价 | ||
ON/安森美 |
23+ |
D2PAK3LE |
69820 |
终端可以免费供样,支持BOM配单! |
询价 | ||
日立 |
2021+ |
TO-220 |
6430 |
原装现货/欢迎来电咨询 |
询价 | ||
H |
23+ |
TO220AB |
10000 |
公司只做原装正品 |
询价 | ||
HITACHI/日立 |
2022+ |
TO-220AB |
12888 |
原厂代理 终端免费提供样品 |
询价 | ||
isc |
2024 |
TO-220 |
5000 |
国产品牌isc,可替代原装 |
询价 |
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