2SK30

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION ThisproductisN-ChannelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •SuperLowOn-StateResistance RDS(on)1=17mΩMAX.(VGS=10V,ID=28A) RDS(on)2=27mΩMAX.(VGS=4.0V,ID=28A) •LowCiss:Ciss=2100pF

2SK30

Silicon N-Channel Power F-MOS FET

■Features ●Avalancheenergycapacityguaranteed ●High-speedswitching ●LowON-resistance ●Nosecondarybreakdown ■Applications ●Contactlessrelay ●Divingcircuitforasolenoid ●Drivingcircuitforamotor ●Controlequipment ●Switchingpowersupply

2SK30

Low-Frequency Amp Applications?

Low-FrequencyAmplifierApplications Features •Idealforpotentiometers,analogswitches,lowfrequencyamplifiers,andconstant-currentregulators.

2SK30

Silicon N Channel MOS FET High Speed Power Switching

Features •Lowon-resistance RDS(on)=6mΩtyp. •Lowdrivecurrent •4Vgatedrivedevicecanbedrivenfrom5Vsource

2SK30

N CHANNEL MOS TYPE (FM TUNER, VHF RF AMPLIFIER APPLICATIONS)

FMTuner,VHFRFAmplifierApplications Lowreversetransfercapacitance:Crss=0.035pF(typ.) Lownoisefigure:NF=1.7dB(typ.) Highpowergain:Gps=28dB(typ.) Recommendoperationvoltage:5~15V

2SK300

2SK300

2SK3000

Silicon N Channel MOS FET Low Frequency Power Switching

Features •Lowon-resistance RDS(on)=0.25Ωtyp.(VGS=10V,ID=450mA) •4Vgatedrivedevices. •Smallpackage(MPAK) •Expansivedraintosourcesurgepowercapability

2SK3000

Silicon N Channel MOS FET Low Frequency Power Switching

SiliconNChannelMOSFETLowFrequencyPowerSwitching Features •Lowon-resistanceRDS(on)=0.16Ωtyp.(VGS=10V,ID=450mA) •4Vgatedrivedevices. •Smallpackage(MPAK) •Expansivedraintosourcesurgepowercapability

2SK3001

GaAs HEMT Low Noise Amplifier

Features ·Excellentlownoisecharacteristics. Fmin=0.8dBtyp.(3V,5mA,0.9GHz) ·Highassociatedgain. Ga=18dBtyp.(3V,5mA,0.9GHz) ·Smallpackage.(CMPAK-4)

2SK3003

External dimensions 1

Externaldimensions1......FM20

2SK3003

External dimensions

Externaldimensions1......FM20 *1:PW100µs,dutycycle1 *2:VDD=25V,L=650µH,IL=18A,unclamped,RG=50Ω,SeeFigure1onPage5.

2SK3004

External dimensions 1 ...... FM20

Externaldimensions1......FM20

2SK3004

External dimensions

Sanken/MOSFET(2SK1177thru2SK3460)

2SK3009

VX-2 Series Power MOSFET(600V 8A)

N-ChannelEnhancementtype FEATURES ●Inputcapacitance(Ciss)issmall.Especially,inputcapacitanceat0biassissmall. ●ThestaticRds(on)issmall. ●Theswitchingtimeisfast. ●Avalancheresistanceguaranteed. APPLICATION ●SwitchingpowersupplyofAC100-200Vinput ●Inverter

2SK301

SI N CHANNEL JUCTION

2SK247SiN-ChannelJunction1Page Wide-Band,Low-NoiseAmplifier 2SK301SiN-ChannelJunction3Page AFAmplifier,Switching 2SK316SiN-ChannelJunction5Page VideCameraFirstStageAmplifier

2SK3013

VX-2 Series Power MOSFET(600V 16A)

FEATURES ●Inputcapacitance(Ciss)issmall.Especially,inputcapacitanceat0biasssmall. ●ThestaticRds(on)issmall. ●Theswitchingtimeisfast. ●Avalancheresistanceguaranteed. APPLICATION ●SwitchingpowersupplyofAC100~200Vinput ●Inverter ●PowerFactorControlCircuit

2SK3017

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

2SK3017

N CHANNEL MOS TYPE (HIGH VOLTAGE SWITCHING, DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS)

DC−DCConverter,RelayDriveandMotorDriveApplications Lowdrain−sourceONresistance:RDS(ON)=1.05Ω(typ.) Highforwardtransferadmittance:|Yfs|=7.0S(typ.) Lowleakagecurrent:IDSS=100μA(max)(VDS=720V) Enhancementmode:Vth=2.0to4.0V(VDS=10V,ID=1m

2SK3018

Small switching (30V, 0.1A)

Features 1)Lowon-resistance. 2)Fastswitchingspeed. 3)Lowvoltagedrive(2.5V)makesthisdeviceidealforportableequipment. 4)Drivecircuitscanbesimple. 5)Paralleluseiseasy. Applications Interfacing,switching(30V,100mA)

2SK3018

N-Channel MOSFET

■Features ●Lowon-resistance. ●Fastswitchingspeed. ●SiliconN-channelMOSFET ●Drivecircuitscanbesimple.