| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
2SK176 | Silicon N-Channel MOS FET Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Nosecondarybreakdown •Suitableforswitchingregulator,DC-DCconverter Application Highspeedpowerswitching | HitachiHitachi, Ltd. 日立公司 | Hitachi | |
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
MOS FIELD EFFECT POWER TRANSISTOR SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
Silicon N-Channel MOS FET Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Nosecondarybreakdown •Suitableforswitchingregulator,DC-DCconverter Application Highspeedpowerswitching | HitachiHitachi, Ltd. 日立公司 | Hitachi | ||
Silicon N Channel MOS FET Application Highspeedpowerswitching Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Nosecondarybreakdown •Suitableforswitchingregulator,DC-DCconverter | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
Silicon N Channel MOS FET Application Highspeedpowerswitching Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Nosecondarybreakdown •Suitableforswitchingregulator,DC-DCconverter | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
Silicon N-Channel MOS FET Application Highspeedpowerswitching Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Nosecondarybreakdown •Suitableforswitchingregulator,DC-DCconverter | HitachiHitachi, Ltd. 日立公司 | Hitachi | ||
Silicon N Channel MOS FET Application Highspeedpowerswitching Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Nosecondarybreakdown •Suitableforswitchingregulator,DC-DCconverter | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
Silicon N Channel MOS FET Application Highspeedpowerswitching Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •Nosecondarybreakdown •Suitableforswitchingregulator,DC-DCconverter | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
Silicon N-Channel MOS FET Application Lowfrequencyamplifier Highspeedswitching Features •Lowon-resistance •Highspeedswitching •4VGatedrivedevicecanbedrivenfrom5Vsource •Suitableforswitchingregulator,DC-DCconverter | HitachiHitachi, Ltd. 日立公司 | Hitachi | ||
Silicon N Channel MOS FET Application •Lowfrequencyamplifier •Highspeedswitching Features •Lowon-resistance •Highspeedswitching •4VGatedrivedevicecanbedrivenfrom5Vsource •Suitableforswitchingregulator,DC-DCconverter | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
Silicon N Channel MOS FET Application •Lowfrequencyamplifier •Highspeedswitching Features •Lowon-resistance •Highspeedswitching •4VGatedrivedevicecanbedrivenfrom5Vsource •Suitableforswitchingregulator,DC-DCconverter | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
Silicon N Channel MOS FET Application •Lowfrequencyamplifier •Highspeedswitching Features •Lowon-resistance •Highspeedswitching •4VGatedrivedevicecanbedrivenfrom5Vsource •Suitableforswitchingregulator,DC-DCconverter | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
Field Effect Transistor Silicon N Channel MOS Type Features •LowDrain-SourceONResistance -ROS(ON)=3.002(Typ.) •HighForwardTransferAdmittance -Ysl=1.5S(Typ.) •LowLeakageCurrent -loss=300μA(Max.)@VDs=600V •Enhancement-Mode -Vth=2.0~4.0V@Vos=10V,b=1mA | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
isc N-Channel MOSFET Transistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
isc N-Channel MOSFET Transistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
isc N-Channel MOSFET Transistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
isc N-Channel MOSFET Transistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
isc N-Channel MOSFET Transistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
Fast Switching Speed | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC |
详细参数
- 型号：
2SK176
- 制造商：
TT Electronics/Semelab
- 功能描述：
MOSFET N-Ch 200V 8A High Speed TO-3
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SANYO |
08PB |
60000 |
询价 | ||||
IR |
23+ |
模块 |
160 |
全新原装正品,量大可订货!可开17%增值票!价格优势! |
询价 | ||
HITACHI |
专业铁帽 |
TO-3 |
100 |
原装铁帽专营,代理渠道量大可订货 |
询价 | ||
IR |
专业模块 |
MODULE |
8513 |
模块原装主营-可开原型号增税票 |
询价 | ||
IR |
16+ |
MODULE |
2100 |
公司大量全新现货 随时可以发货 |
询价 | ||
日立 |
22+ |
35000 |
OEM工厂,中国区10年优质供应商! |
询价 | |||
isc |
2024 |
TO-3 |
6500 |
国产品牌isc,可替代原装 |
询价 | ||
23+ |
20000 |
正品原装货价格低qq:2987726803 |
询价 | ||||
HIT |
99+ |
SOT89 |
2255 |
全新原装进口自己库存优势 |
询价 | ||
RENESAS |
360000 |
原厂原装 |
1305 |
询价 |
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