2SJ200O说明书PDF资料原装现货东芝TOSHIBA-114ic电子网

首页 >2SJ200O>规格书列表

零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
2SJ200	文件：181.4 Kbytes Page：3 Pages	PCHANNELMOSTYPE(HIGHPOWERAMPLIFIERAPPLICATION) HighPowerAmplifierApplication •Highbreakdownvoltage:VDSS=−180V •Highforwardtransferadmittance:\|Yfs\|=4.0S(typ.) •Complementaryto2SK1529	TOSHIBAToshiba Semiconductor 东芝株式会社東芝	TOSHIBA
2SJ200	文件：426.58 Kbytes Page：5 Pages	HighPowerAmplifierApplication	TOSHIBAToshiba Semiconductor 东芝株式会社東芝	TOSHIBA
2SJ200	文件：297.65 Kbytes Page：5 Pages	TOSHIBAFieldEffectTransistorSiliconPChannelMOSType HighPowerAmplifierApplication •Highbreakdownvoltage:VDSS=−180V •Highforwardtransferadmittance:\|Yfs\|=4.0S(typ.) •Complementaryto2SK1529	TOSHIBAToshiba Semiconductor 东芝株式会社東芝	TOSHIBA
2SJ200	文件：1.58274 Mbytes Page：73 Pages	BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBAToshiba Semiconductor 东芝株式会社東芝	TOSHIBA
2SJ200-Y	文件：297.65 Kbytes Page：5 Pages	TOSHIBAFieldEffectTransistorSiliconPChannelMOSType HighPowerAmplifierApplication •Highbreakdownvoltage:VDSS=−180V •Highforwardtransferadmittance:\|Yfs\|=4.0S(typ.) •Complementaryto2SK1529	TOSHIBAToshiba Semiconductor 东芝株式会社東芝	TOSHIBA

更多2SJ200O供应商更新时间2024-6-6 18:57:00