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2SD1899

TO-252Plastic-EncapsulatedTransistors

FEATURES Powerdissipation PCM:2W(Tamb=25℃) Collectorcurrent ICM:3A Collector-basevoltage V(BR)CBO:60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

TEL

TRANSYS Electronics Limited

2SD1899

NPNPLASTICENCAPSULATETRANSISTORS

NPNPLASTICENCAPSULATETRANSISTORS P/bLead(Pb)-Free

WEITRONWEITRON

威堂電子科技

2SD1899

SiliconNPNtransistorinaTO-252PlasticPackage.

Descriptions SiliconNPNtransistorinaTO-252PlasticPackage. Features LowVCE(sat),highcurrentandhighfT,excellentlinearityofhFE,fastswitchingtime. Applications Relaydrivers,high-speedinverters,generalhigh-currentswitchingapplications.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

2SD1899

iscSiliconNPNPowerTransistor

DESCRIPTION •Lowcollectorsaturationvoltage •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS •Hightransitionfrequencyapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

2SD1899

TO-252-2LPlastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●LowVCE(sat) ●HighTransitionFrequency

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

2SD1899

SiliconNPNPowerTransistor

FEATURES ·Lowcollectorsaturationvoltage APPLICATIONS ·AudioFrequencyAmplifierandSwitching, especiallyinHybridIntegratedCircuits

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

2SD1899-K

NPNSiliconEpitaxialTransistor

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RohsCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •Capableof1.0WattsofPowerDissipation. •Collector-current3.0A •Collector-baseVoltage60V •Operatingandstoragejuncti

MCCMicro Commercial Components

美微科美微科半导体公司

2SD1899L

SiliconNPNtransistorinaTO-126FPlasticPackage.

Descriptions SiliconNPNtransistorinaTO-126FPlasticPackage. Features LowVCE(sat),highcurrentandhighfT,excellentlinearityofhFE,fastswitchingtime. Applications Relaydrivers,high-speedinverters,generalhigh-currentswitchingapplications.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

2SD1899-L

NPNSiliconEpitaxialTransistor

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RohsCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •Capableof1.0WattsofPowerDissipation. •Collector-current3.0A •Collector-baseVoltage60V •Operatingandstoragejuncti

MCCMicro Commercial Components

美微科美微科半导体公司

2SD1899-M

NPNSiliconEpitaxialTransistor

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RohsCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •Capableof1.0WattsofPowerDissipation. •Collector-current3.0A •Collector-baseVoltage60V •Operatingandstoragejuncti

MCCMicro Commercial Components

美微科美微科半导体公司

2SD1899-Z

TO-251-3LPlastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●HighhFE ●LowVCE(sat)

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

2SD1899-Z

NPNSILICONEPITAXIALTRANSISTORMP-3

DESCRIPTION 2SD1899-ZisdesignedforAudioFrequencyAmplifierandSwitching,especiallyinHybridIntegratedCircuits. FEATURES •HighhFEhFE=100to400 •LowVCE(sat)VCE(sat)=0.3VCE

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

2SD1899-Z

SILICONPOWERTRANSISTOR

DESCRIPTION The2SD1899-ZisdesignedforAudioFrequencyAmplifierandSwitching,especiallyinHybridIntegratedCircuits. FEATURES •HighhFE:hFE=100to400 •LowVCE(sat):VCE(sat)≤0.25V

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

2SD1899-Z

iscSiliconNPNPowerTransistor

DESCRIPTION •Lowcollectorsaturationvoltage •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS •Hightransitionfrequencyapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

2SD1899-Z

TO-252Plastic-EncapsulatedTransistors

FEATURES Powerdissipation PCM:2W(Tamb=25℃) Collectorcurrent ICM:3A Collector-basevoltage V(BR)CBO:60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

TEL

TRANSYS Electronics Limited

2SD1899-Z

Plastic-EncapsulatedTransistors

FEATURES Powerdissipation PCM:2W(Tamb=25℃) Collectorcurrent ICM:3A Collector-basevoltage V(BR)CBO:60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

TEL

TRANSYS Electronics Limited

2SD1899-Z

NPNSiliconEpitaxialTransistor

Features ●LowVCE(sat). ●HighhFE.

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

供应商型号品牌批号封装库存备注价格
国产
23+
TO-251
50000
全新原装正品现货,支持订货
询价
国产
22+
TO-251
3000
原装现货假一赔十
询价
Micro Commercial Co
24+
TO-252-3,DPak(2 引线 + 接片
9350
独立分销商,公司只做原装,诚心经营,免费试样正品保证
询价
NEC
2020+
TO-252
16800
绝对原装进口现货,假一赔十,价格优势!?
询价
NEC
2023+
TO-252
16800
芯为只有原装,公司现货
询价
DXC鼎欣诚
22+
TO-126F
10000
原装现货,假一赔十
询价
UTC/友顺
2021+
251-252
688888
原厂授权代理,海外优势订货渠道。可提供大量库存,详
询价
Micro Commercial Co
2022+
-
38550
全新原装 支持表配单 中国著名电子元器件独立分销
询价
NEC
23+
TO-252
6000
专业优势供应
询价
NEC
2308+
381946
一级代理,原装正品,公司现货!
询价
更多2SD1899-KMOS(场效应管)供应商 更新时间2024-5-24 14:13:00