首页 >2SD1898G-Q>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
PowerTransistor(80V,1A) ●Features 1)HighVCEO,VCEO=80V 2)HighIC,IC=1A(DC) 3)GoodhFElinearity. 4)LowVCE(sat). 5)Complementsthe2SB1260/2SB1241/2SB1181. | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | ||
EpitaxialPlanarNPNTransistors EpitaxialPlanarNPNTransistors P/bLead(Pb)-Free | WEITRONWEITRON 威堂電子科技 | WEITRON | ||
POWERTRANSISTOR FEATURES *HighVCEO=80V *HighIC=1A(DC) *GoodhFElinearity. *LowVCE(SAT) *Complementsthe2SB1260. | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
NPNSiliconEpitaxialPlanarTransistor Description The2SD1898isdesignedforswitchingapplications. | SECOS SeCoS Halbleitertechnologie GmbH | SECOS | ||
PowerTransistor(80V,1A) | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | ||
PowerTransistor Features ●HighVCEO,VCEO=80V. ●HighIC,IC=1A(DC). ●GoodhFElinearity. ●LowVCE(sat). | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | KEXIN | ||
PowerTransistor(80V,1A) | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | ||
TRANSISTOR(NPN) FEATURES ●HighBreakdownVoltageandCurrent ●ExcellentDCCurrentGainLinearity ●Complementthe2SB1260 ●LowCollector-EmitterSaturationVoltage | HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd. 金誉半导体深圳市金誉半导体股份有限公司 | HTSEMI | ||
PowerTransistor | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | ||
PowerTransistor FEATURES ●HighVCEO,VCEO=80V. ●HighIC,IC=1A(DC). ●GoodHFELinearity. ●LowVCE(sat). ●Complementthe2SB1260. APPLICATIONS ●NPNsilicontransistor. | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 | BILIN | ||
NPNTransistors ■Features ●HighVCEO,VCEO=80V ●HighIC,IC=1A(DC) ●LowVCE(sat) ●Complementaryto2SB1260 | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | YFWDIODE | ||
PowerTransistor(80V,1A) | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | ||
NPN-GeneralUseTransistor NPN-GeneralUseTransistor1W1A80V Feature MarkingDF Application Canbeusedforswitchingandamplifyinginvariouselectricalandelectroniccircuit. | SKTECHNOLGYSHIKE Electronics 時科广东時科微实业有限公司 | SKTECHNOLGY | ||
PowerTransistor(80V,1A) ●Features 1)HighVCEO,VCEO=80V 2)HighIC,IC=1A(DC) 3)GoodhFElinearity. 4)LowVCE(sat). 5)Complementsthe2SB1260/2SB1241/2SB1181. | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | ||
POWERTRANSISTOR | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
SOT-89Plastic-EncapsulateTransistors TRANSISTOR(NPN) FEATURES ●HighBreakdownVoltageandCurrent ●ExcellentDCCurrentGainLinearity ●Pb-Freepackageisavailable RoHSproductforpackingcodesuffixG HalogenfreeproductforpackingcodesuffixH ●LowCollector-EmitterSaturationVoltage | WILLASWILLAS electronics corp 威倫威倫电子股份有限公司 | WILLAS | ||
TRANSISTOR(NPN) FEATURES ●HighVCEO ●HighIC ●GoodhFElinearity ●LowVCE(sat) | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳实业深圳市永而佳实业有限公司 | WINNERJOIN | ||
SOT-89-3LPlastic-EncapsulateTransistors TRANSISTOR(NPN) FEATURES ●HighBreakdownVoltageandCurrent ●ExcellentDCCurrentGainLinearity ●Complementthe2SB1260 ●LowCollector-EmitterSaturationVoltage | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | JIANGSU | ||
PowerTransistor(80V,1A) FEATURES HighVCEO,VCEO=80V. HighIC,IC=1A(DC). GoodHFELinearity. LowVCE(sat). Complementthe2SB1260. APPLICATIONS NPNsilicontransistor. | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | DGNJDZ | ||
NPNSiliconPowerTransistors | MCCMicro Commercial Components 美微科美微科半导体公司 | MCC |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
UTC/友顺 |
22+ |
SOT89T/R |
25000 |
原装现货,价格优惠,假一罚十 |
询价 | ||
UTC/友顺 |
22+ |
SOT-89TR |
128038 |
郑重承诺只做原装进口现货 |
询价 | ||
UTC/友顺 |
2235+ |
SOT89T/R |
23791 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
UTC/友顺 |
2023+ |
SOT89T/R |
700000 |
柒号芯城跟原厂的距离只有0.07公分 |
询价 | ||
UTC/友顺 |
21+/22+ |
SOT89T/R |
8100 |
全新原装 实单必成 |
询价 | ||
UTC/友顺 |
24+ |
SOT89T/R |
9000 |
只做原装正品 有挂有货 假一赔十 |
询价 | ||
UTC |
23+ |
NA |
4000 |
专业电子元器件供应链正迈科技特价代理QQ1304306553 |
询价 | ||
UTC |
23+ |
SOT-89 |
45000 |
原装正品现货 |
询价 | ||
UTC/友顺 |
2021+ |
SOT23.3 |
100000 |
原装现货 |
询价 | ||
UTC(友顺) |
2112+ |
SOT-89(SOT-89-3) |
105000 |
4000个/圆盘一级代理专营品牌!原装正品,优势现货, |
询价 |
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