| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION FEATURES •Idealformediumoutputpoweramplification •PO(1dB)=15.0dBmTYP.@VCE=2.8V,f=1.8GHz,Pin=1dBm •HFT3technology(fT=12GHz)adopted •Highreliabilitythroughuseofgoldelectrodes •4-pinsuperminimoldpackage | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION FEATURES •Idealformediumoutputpoweramplification •PO(1dB)=15.0dBmTYP.@VCE=2.8V,f=1.8GHz,Pin=1dBm •HFT3technology(fT=12GHz)adopted •Highreliabilitythroughuseofgoldelectrodes •4-pinsuperminimoldpackage | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MEDIUM OUTPUT POWER AMPLIFICATION (30 mW) NPNSILICONRFTRANSISTORFOR MEDIUMOUTPUTPOWERAMPLIFICATION(30mW) FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD FEATURES •Idealformediumoutputpoweramplification •PO(1dB)=15.0dBmTYP.@VCE=2.8V,f=1.8GHz,Pin=1dBm •HFT3technology(fT=12GHz)adopted •Highreliabil | CEL California Eastern Laboratories | CEL | ||
NPN SILICON RF TRANSISTOR NPNSILICONRFTRANSISTORFOR MEDIUMOUTPUTPOWERAMPLIFICATION(30mW) FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD FEATURES •Idealformediumoutputpoweramplification •PO(1dB)=15.0dBmTYP.@VCE=2.8V,f=1.8GHz,Pin=1dBm •HFT3technology(fT=12GHz)adopted •Highreliab | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
NPN SILICON RF TRANSISTOR NPNSILICONRFTRANSISTORFOR MEDIUMOUTPUTPOWERAMPLIFICATION(30mW) FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD FEATURES •Idealformediumoutputpoweramplification •PO(1dB)=15.0dBmTYP.@VCE=2.8V,f=1.8GHz,Pin=1dBm •HFT3technology(fT=12GHz)adopted •Highreliab | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD NPNSILICONRFTRANSISTORFORMEDIUMOUTPUTPOWERAMPLIFICATION(60mW)4-PINSUPERMINIMOLD FEATURES •Idealformediumoutputpoweramplification •PO(1dB)=18.0dBmTYP.@VCE=2.8V,f=1.8GHz,Pin=7dBm •HFT3technology(fT=12GHz)adopted •Highreliabilitythroughuseofgol | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION NPNSILICONRFTRANSISTORFORMEDIUMOUTPUTPOWERAMPLIFICATION(60mW)4-PINSUPERMINIMOLD FEATURES •Idealformediumoutputpoweramplification •PO(1dB)=18.0dBmTYP.@VCE=2.8V,f=1.8GHz,Pin=7dBm •HFT3technology(fT=12GHz)adopted •Highreliabilitythroughuseofgol | CEL California Eastern Laboratories | CEL | ||
NPN SILICON RF TRANSISTOR NPNSILICONRFTRANSISTORFOR MEDIUMOUTPUTPOWERAMPLIFICATION(60mW) 4-PINSUPERMINIMOLD FEATURES •Idealformediumoutputpoweramplification •PO(1dB)=18.0dBmTYP.@VCE=2.8V,f=1.8GHz,Pin=7dBm •HFT3technology(fT=12GHz)adopted •Highreliabilitythroughuseof | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD NPNSILICONRFTRANSISTORFORMEDIUMOUTPUTPOWERAMPLIFICATION(60mW)4-PINSUPERMINIMOLD FEATURES •Idealformediumoutputpoweramplification •PO(1dB)=18.0dBmTYP.@VCE=2.8V,f=1.8GHz,Pin=7dBm •HFT3technology(fT=12GHz)adopted •Highreliabilitythroughuseofgol | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
NPN SILICON RF TRANSISTOR NPNSILICONRFTRANSISTORFOR MEDIUMOUTPUTPOWERAMPLIFICATION(60mW) 4-PINSUPERMINIMOLD FEATURES •Idealformediumoutputpoweramplification •PO(1dB)=18.0dBmTYP.@VCE=2.8V,f=1.8GHz,Pin=7dBm •HFT3technology(fT=12GHz)adopted •Highreliabilitythroughuseof | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
NPN SILICON RF TRANSISTOR NPNSILICONRFTRANSISTORFOR MEDIUMOUTPUTPOWERAMPLIFICATION(60mW) FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD FEATURES •Idealformediumoutputpoweramplification •PO(1dB)=18.0dBmTYP.@VCE=2.8V,f=1.8GHz,Pin=7dBm •HFT3technology(fT=12GHz)adopted •Highreliab | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
NPN SILICON RF TRANSISTOR NPNSILICONRFTRANSISTORFOR MEDIUMOUTPUTPOWERAMPLIFICATION(60mW) FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD FEATURES •Idealformediumoutputpoweramplification •PO(1dB)=18.0dBmTYP.@VCE=2.8V,f=1.8GHz,Pin=7dBm •HFT3technology(fT=12GHz)adopted •Highreliab | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) NPNSILICONRFTRANSISTORFOR MEDIUMOUTPUTPOWERAMPLIFICATION(0.4W) FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M04) FEATURES •Idealfor460MHzto2.4GHzmediumoutputpoweramplification •PO(1dB)=26.0dBmTYP.@VCE=3.6V,f=1.8GHz,Pin=15dBm •Highcollectorefficiency:η | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W) NPNSILICONRFTRANSISTORFOR MEDIUMOUTPUTPOWERAMPLIFICATION(0.4W) FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M04) FEATURES •Idealfor460MHzto2.4GHzmediumoutputpoweramplification •PO(1dB)=26.0dBmTYP.@VCE=3.6V,f=1.8GHz,Pin=15dBm •Highcollectorefficiency:η | CEL California Eastern Laboratories | CEL | ||
NPN SILICON RF TRANSISTOR NPNSILICONRFTRANSISTORFOR MEDIUMOUTPUTPOWERAMPLIFICATION(0.4W) FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M04) FEATURES •Idealfor460MHzto2.4GHzmediumoutputpoweramplification •PO(1dB)=26.0dBmTYP.@VCE=3.6V,f=1.8GHz,Pin=15dBm •Highcollectorefficiency: | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) NPNSILICONRFTRANSISTORFOR MEDIUMOUTPUTPOWERAMPLIFICATION(0.4W) FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M04) FEATURES •Idealfor460MHzto2.4GHzmediumoutputpoweramplification •PO(1dB)=26.0dBmTYP.@VCE=3.6V,f=1.8GHz,Pin=15dBm •Highcollectorefficiency:η | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
NPN SILICON RF TRANSISTOR NPNSILICONRFTRANSISTORFOR MEDIUMOUTPUTPOWERAMPLIFICATION(0.4W) FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M04) FEATURES •Idealfor460MHzto2.4GHzmediumoutputpoweramplification •PO(1dB)=26.0dBmTYP.@VCE=3.6V,f=1.8GHz,Pin=15dBm •Highcollectorefficiency: | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
High-Speed Switching Applications DC-DC Converter Applications Strobe Applications High-SpeedSwitchingApplications DC-DCConverterApplications StrobeApplications •HighDCcurrentgain:hFE=400to1000(IC=0.2A) •Lowcollector-emittersaturationvoltage:VCE(sat)=0.12V(max) •High-speedswitching:tf=25ns(typ.) | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
Bipolar Small-Signal Transistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
Silicon NPN Epitaxial VHF/UHF wide band amplifier Features •Supercompactpackage:MFPAK(1.4x0.8x0.59mm) | HitachiHitachi, Ltd. 日立公司 | Hitachi |
详细参数
- 型号：
2SC575
- 制造商：
Renesas Electronics Corporation
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
08PB |
30000 |
询价 | ||||
NEC |
23+ |
SOT343 |
31000 |
全新原装 |
询价 | ||
RENESAS |
23+ |
SOT-343 |
63000 |
原装正品现货 |
询价 | ||
California Eastern Labs |
2022+ |
原厂原包装 |
8600 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
RENESAS/瑞萨 |
22+ |
SOT343 |
25000 |
只有原装原装,支持BOM配单 |
询价 | ||
RENESAS-瑞萨 |
24+25+/26+27+ |
车规-元器件 |
143788 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
CEL |
24+ |
SC-82A,SOT-343 |
9350 |
独立分销商,公司只做原装,诚心经营,免费试样正品保证 |
询价 | ||
23+ |
N/A |
56000 |
一级代理放心采购 |
询价 | |||
NEC |
23+ |
SOT343 |
5800 |
询价 | |||
NEC |
6000 |
面议 |
19 |
SOT343 |
询价 |
相关规格书
更多- 2SC5750-T1-A-FB
- 2SC5751-T2-A
- 2SC5753-T2-A-FB
- 2SC5754-T2-A-FB
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相关库存
更多- 2SC5751-T1-A-FB
- 2SC5753-T2-A
- 2SC5754-T2-A
- 2SC5755(TE85L,F)
- 2SC5761-T2-A-FB
- 2SC5778
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- 2SC5823-TL-E
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- 2SC5832-TL-E
- 2SC584500L
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- 2SC5855
- 2SC5858(Q)
- 2SC58630QL
- 2SC5865TL
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- 2SC5866TLQ
- 2SC5866TLR
- 2SC5867TLR
- 2SC5868TLR
- 2SC5876T106R
- 2SC5880TV2R
- 2SC5881TLR
- 2SC5888
- 2SC5900-MG32
- 2SC5902000LK
- 2SC5915-DL-E
- 2SC5916TLR
- 2SC5918T100Q
- 2SC5919TLQ
- 2SC5931-RL
- 2SC593900L
- 2SC594600L
- 2SC5948-O(Q)
- 2SC5949-O(Q)
- 2SC59540Q
- 2SC5964-S-TD-H
- 2SC5964-TD-H
