2SC5700

Silicon NPN Epitaxial VHF/UHF wide band amplifier

Features •Highpowergainlownoisefigureatlowpoweroperation: |S21|2=16dBtyp,NF=1.0dBtyp(VCE=1V,IC=5mA,f=900MHz)

2SC5700

Silicon NPN Epitaxial VHF/UHF wide band amplifier

Features •Highpowergainlownoisefigureatlowpoweroperation: |S21|2=16dBtyp,NF=1.0dBtyp(VCE=1V,IC=5mA,f=900MHz)

2SC5700WB-TR-E

Silicon NPN Epitaxial VHF/UHF wide band amplifier

Features •Highpowergainlownoisefigureatlowpoweroperation: |S21|2=16dBtyp,NF=1.0dBtyp(VCE=1V,IC=5mA,f=900MHz)

2SC5702

Silicon NPN Epitaxial High Frequency Amplifier / Oscillator

Features •Highgainbandwidthproduct fT=8GHztyp. •Highpowergainandlownoisefigure; PG=13dBtyp.,NF=1.05dBtyp.atf=900MHz

2SC5702

Silicon NPN Epitaxial High Frequency Amplifier / Oscillator

Features •Highgainbandwidthproduct fT=8GHztyp. •Highpowergainandlownoisefigure; PG=13dBtyp.,NF=1.05dBtyp.atf=900MHz

2SC5702ZS-TL-E

Silicon NPN Epitaxial High Frequency Amplifier / Oscillator

Features •Highgainbandwidthproduct fT=8GHztyp. •Highpowergainandlownoisefigure; PG=13dBtyp.,NF=1.05dBtyp.atf=900MHz

2SC5703

TOSHIBA Transistor Silicon NPN Epitaxial Type

High-SpeedSwitchingApplications DC-DCConverterApplications StrobeApplications •HighDCcurrentgain:hFE=400to1000(IC=0.5A) •Lowcollector-emittersaturationvoltage:VCE(sat)=0.12V(max) •High-speedswitching:tf=55ns(typ.)

2SC5703

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

2SC5703

High-Speed Switching Applications DC-DC Converter Applications Strobe Applications

•HighDCcurrentgain:hFE=400to1000(IC=0.5A) •Lowcollector-emittersaturationvoltage:VCE(sat)=0.12V(max) •High-speedswitching:tf=55ns(typ.)

2SC5703_V01

High-Speed Switching Applications DC-DC Converter Applications Strobe Applications

•HighDCcurrentgain:hFE=400to1000(IC=0.5A) •Lowcollector-emittersaturationvoltage:VCE(sat)=0.12V(max) •High-speedswitching:tf=55ns(typ.)

2SC5704

NPN SILICON RF TRANSISTOR

NPNSILICONRFTRANSISTORFOR LOWNOISE×HIGH-GAINAMPLIFICATION 6-PINLEAD-LESSMINIMOLD

2SC5704-T3

NPN SILICON RF TRANSISTOR

NPNSILICONRFTRANSISTORFOR LOWNOISE×HIGH-GAINAMPLIFICATION 6-PINLEAD-LESSMINIMOLD

2SC5706

POWER TRANSISTOR(5A,50V,15W)

NPNSiliconPowerTransistors DPAKSurfaceMountPowerPackage TheDPAKPowertransistorisusedbygeneralpurposeamplifiers,relaydrives,lmapdrives,motordrivers,andhighspeedswitchingapplications.

2SC5706

High Current Switching Applications

HighCurrentSwitchingApplications Features •AdoptionofFBET,MBITprocess. •Largecurrentcapacitance. •Lowcollector-to-emittersaturationvoltage. •High-speedswitching. •Highallowablepowerdissipation. Applications •DC-DCconverter,relaydrivers,lampdrivers,motordrivers,

2SC5706

NPN EPITAXIAL PLANAR TRANSISTOR

Features: *Largecurrentcapacitance *Lowcollector-to-emittersaturationvoltage *High-speedswitching *Highallowabledissipation

2SC5706

Silicon NPN transistor in a TO-220 Plastic Package.

Descriptions SiliconNPNtransistorinaTO-220PlasticPackage. Features Lowcollector-to-emittersaturationvoltage,high-speedswitching,highallowablepowerdissipation.  Applications DC-DCconverter,relaydrivers,lampdriversmotordrivers.

2SC5706

Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA

BipolarTransistor (-)50V,(-)5A,LowVCE(sat),(PNP)NPNSingleTP/TP-FA Features •AdoptionofFBETandMBITprocesses •Largecurrentcapacitance •Lowcollector-to-emittersaturationvoltage •High-speedswitching •Highallowablepowerdissipation Applications •DC/DCconverter,rel

2SC5706

isc Silicon NPN Power Transistor

DESCRIPTION ·Largecurrentcapacitance ·High-speedswitching ·100avalanchetested ·Highallowablepowerdissipation ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ·Complementaryto2SA2039 APPLICATIONS ·DC/DCconverter,relaydrivers,lampdrivers,motor

2SC5706D

NPN Silicon General Purpose Transistor

FEATURES •Largecurrentcapacitance •Lowcollector-to-emittersaturationvoltage •High-speedswitching •Highallowablepowerdissipation

2SC5706-E

Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA

BipolarTransistor (-)50V,(-)5A,LowVCE(sat),(PNP)NPNSingleTP/TP-FA Features •AdoptionofFBETandMBITprocesses •Largecurrentcapacitance •Lowcollector-to-emittersaturationvoltage •High-speedswitching •Highallowablepowerdissipation Applications •DC/DCconverter,rel