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2SC5198

NPNTRIPLEDIFFUSEDTYPE(POWERAMPLIFIERAPPLICATIONS)

PowerAmplifierApplications •Highbreakdownvoltage:VCEO=140V(min) •Complementaryto2SA1941 •Suitableforusein70-Whighfidelityaudioamplifier’soutputstage

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

2SC5198

SiliconNPNTripleDiffusedTypePowerAmplifierApplications

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

2SC5198

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-3P(I)package •Complementtotype2SA1941 APPLICATIONS •Poweramplifierapplications •Recommendfor70Whighfidelityaudiofrequencyamplifieroutputstage

SAVANTIC

Savantic, Inc.

2SC5198

iscSiliconNPNPowerTransistor

DESCRIPTION •LowCollectorSaturationVoltage-:VCE(sat)=2.0V(Min)@IC=7A •GoodLinearityofhFE •ComplementtoType2SA1941 APPLICATIONS •Poweramplifierapplications •Recommendfor70Whighfidelityaudiofrequencyamplifieroutputstageapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

2SC5198

PowerAmplifierApplications

PowerAmplifierApplications •Highbreakdownvoltage:VCEO=140V(min) •Complementaryto2SA1941 •Suitableforusein70-Whighfidelityaudioamplifier’soutputstage

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

2SC5198

PowerAmplifierApplications

FEATURES ●Highcollectorvoltage˖VCEO=140V(min) ●Complementaryto2SA1941 ●Recommendedfor70-Whigh-fidelityaudiofrequencyamplifieroutput ●RoHSproduct APPLICATIONS ●PowerAmplifierApplications

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

2SC5198

TO-3PPlastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●LowCollectorSaturationVoltage ●GoodLinearityofhFE APPLICATIONS ●PowerAmplifierApplications ●Recommendfor70WHighFidelityAudioFrequencyAmplifierOutputStageApplications

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

2SC5198

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

2SC5198

PowerAmplifierApplications

PowerAmplifierApplications •Highbreakdownvoltage:VCEO=140V(min) •Complementaryto2SA1941 •Suitableforusein70-Whighfidelityaudioamplifier’soutputstage

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

2SC5198

SiliconNPNPowerTransistors

SAVANTIC

Savantic, Inc.

2SC5198

SiliconNPNtransistorinaTO-3PPlasticPackage.

Descriptions SiliconNPNtransistorinaTO-3PPlasticPackage. Features Recommendfor70Whighfidelityaudiofrequencyamplifieroutputstage,Complementaryto2SA1941. Applications Poweramplifierapplications.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

2SC5198B

SiliconNPNtriplediffusionplanartransistor

FEATURES •Highbreakdownvoltage,VCEO=140V(min) •Complementaryto2SA1941B •TO-3Ppackagewhichcanbeinstalledtotheheatsinkwithonescrew APPLICATIONS •Suitableforusein70Whighfidelityaudioamplifier’soutputstage

NELLSEMINell Semiconductor Co., Ltd

尼爾半導體尼爾半導體股份有限公司

2SC5198OQ

PowerAmplifierApplications

PowerAmplifierApplications •Highbreakdownvoltage:VCEO=140V(min) •Complementaryto2SA1941 •Suitableforusein70-Whighfidelityaudioamplifier’soutputstage

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

2SC5198-OQ

PowerAmplifierApplications

PowerAmplifierApplications •Highbreakdownvoltage:VCEO=140V(min) •Complementaryto2SA1941 •Suitableforusein70-Whighfidelityaudioamplifier’soutputstage

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

2SC5198-O-W-N-B

PowerAmplifierApplications

FEATURES ●Highcollectorvoltage˖VCEO=140V(min) ●Complementaryto2SA1941 ●Recommendedfor70-Whigh-fidelityaudiofrequencyamplifieroutput ●RoHSproduct APPLICATIONS ●PowerAmplifierApplications

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

2SC5198-R

PowerAmplifierApplications

PowerAmplifierApplications •Highbreakdownvoltage:VCEO=140V(min) •Complementaryto2SA1941 •Suitableforusein70-Whighfidelityaudioamplifier’soutputstage

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

详细参数

  • 型号:

    2SC5198-O(Q)

  • 功能描述:

    两极晶体管 - BJT NPN VCEO 140V Ic 10A PC 100W

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    PNP 集电极—基极电压

  • VCBO:

    集电极—发射极最大电压

  • VCEO:

    - 40 V 发射极 - 基极电压

  • VEBO:

    - 6 V

  • 增益带宽产品fT:

    直流集电极/Base Gain hfe

  • Min:

    100 A

  • 安装风格:

    SMD/SMT

  • 封装/箱体:

    PowerFLAT 2 x 2

供应商型号品牌批号封装库存备注价格
TOS
16+
TO-3P
27
原装现货假一罚十
询价
TOSHIBA
21+
TO-3PN
100
原装优势现货 欢迎咨询
询价
TOSHIBA
22+
TO-3PN
30000
只做原装 假一赔十
询价
TOSHIBA
19+
2290
询价
TOSHIBA/东芝
21+
TO-3P(N)
60000
绝对原装正品现货,假一罚十
询价
TOS
22+23+
TO-3P
8090
绝对原装正品全新进口深圳现货
询价
TOSHIBA/东芝
21+
65200
询价
TOSHIBA/东芝
23+
TO-3P(N)
12730
原装正品代理渠道价格优势
询价
TOSHIBA/东芝
23+
TO-3P(N)
90000
只做原厂渠道价格优势可提供技术支持
询价
TOS
22+
TO-3P
360000
进口原装房间现货实库实数
询价
更多2SC5198-O(Q)供应商 更新时间2024-4-29 13:31:00