首页 >2SC5198-O(Q)>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
NPNTRIPLEDIFFUSEDTYPE(POWERAMPLIFIERAPPLICATIONS) PowerAmplifierApplications •Highbreakdownvoltage:VCEO=140V(min) •Complementaryto2SA1941 •Suitableforusein70-Whighfidelityaudioamplifier’soutputstage | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
SiliconNPNTripleDiffusedTypePowerAmplifierApplications | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-3P(I)package •Complementtotype2SA1941 APPLICATIONS •Poweramplifierapplications •Recommendfor70Whighfidelityaudiofrequencyamplifieroutputstage | SAVANTIC Savantic, Inc. | SAVANTIC | ||
iscSiliconNPNPowerTransistor DESCRIPTION •LowCollectorSaturationVoltage-:VCE(sat)=2.0V(Min)@IC=7A •GoodLinearityofhFE •ComplementtoType2SA1941 APPLICATIONS •Poweramplifierapplications •Recommendfor70Whighfidelityaudiofrequencyamplifieroutputstageapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PowerAmplifierApplications PowerAmplifierApplications •Highbreakdownvoltage:VCEO=140V(min) •Complementaryto2SA1941 •Suitableforusein70-Whighfidelityaudioamplifier’soutputstage | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
PowerAmplifierApplications FEATURES ●Highcollectorvoltage˖VCEO=140V(min) ●Complementaryto2SA1941 ●Recommendedfor70-Whigh-fidelityaudiofrequencyamplifieroutput ●RoHSproduct APPLICATIONS ●PowerAmplifierApplications | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. JSMCJILIN SINO-MICROELECTRONICS CO., LTD. | JSMC | ||
TO-3PPlastic-EncapsulateTransistors TRANSISTOR(NPN) FEATURES ●LowCollectorSaturationVoltage ●GoodLinearityofhFE APPLICATIONS ●PowerAmplifierApplications ●Recommendfor70WHighFidelityAudioFrequencyAmplifierOutputStageApplications | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | JIANGSU | ||
BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
PowerAmplifierApplications PowerAmplifierApplications •Highbreakdownvoltage:VCEO=140V(min) •Complementaryto2SA1941 •Suitableforusein70-Whighfidelityaudioamplifier’soutputstage | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
SiliconNPNPowerTransistors | SAVANTIC Savantic, Inc. | SAVANTIC | ||
SiliconNPNtransistorinaTO-3PPlasticPackage. Descriptions SiliconNPNtransistorinaTO-3PPlasticPackage. Features Recommendfor70Whighfidelityaudiofrequencyamplifieroutputstage,Complementaryto2SA1941. Applications Poweramplifierapplications. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | FOSHAN | ||
SiliconNPNtriplediffusionplanartransistor FEATURES •Highbreakdownvoltage,VCEO=140V(min) •Complementaryto2SA1941B •TO-3Ppackagewhichcanbeinstalledtotheheatsinkwithonescrew APPLICATIONS •Suitableforusein70Whighfidelityaudioamplifier’soutputstage | NELLSEMINell Semiconductor Co., Ltd 尼爾半導體尼爾半導體股份有限公司 | NELLSEMI | ||
PowerAmplifierApplications PowerAmplifierApplications •Highbreakdownvoltage:VCEO=140V(min) •Complementaryto2SA1941 •Suitableforusein70-Whighfidelityaudioamplifier’soutputstage | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
PowerAmplifierApplications PowerAmplifierApplications •Highbreakdownvoltage:VCEO=140V(min) •Complementaryto2SA1941 •Suitableforusein70-Whighfidelityaudioamplifier’soutputstage | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
PowerAmplifierApplications FEATURES ●Highcollectorvoltage˖VCEO=140V(min) ●Complementaryto2SA1941 ●Recommendedfor70-Whigh-fidelityaudiofrequencyamplifieroutput ●RoHSproduct APPLICATIONS ●PowerAmplifierApplications | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. JSMCJILIN SINO-MICROELECTRONICS CO., LTD. | JSMC | ||
PowerAmplifierApplications PowerAmplifierApplications •Highbreakdownvoltage:VCEO=140V(min) •Complementaryto2SA1941 •Suitableforusein70-Whighfidelityaudioamplifier’soutputstage | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA |
详细参数
- 型号:
2SC5198-O(Q)
- 功能描述:
两极晶体管 - BJT NPN VCEO 140V Ic 10A PC 100W
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
PNP 集电极—基极电压
- VCBO:
集电极—发射极最大电压
- VCEO:
- 40 V 发射极 - 基极电压
- VEBO:
- 6 V
- 增益带宽产品fT:
直流集电极/Base Gain hfe
- Min:
100 A
- 安装风格:
SMD/SMT
- 封装/箱体:
PowerFLAT 2 x 2
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
TOS |
16+ |
TO-3P |
27 |
原装现货假一罚十 |
询价 | ||
TOSHIBA |
21+ |
TO-3PN |
100 |
原装优势现货 欢迎咨询 |
询价 | ||
TOSHIBA |
22+ |
TO-3PN |
30000 |
只做原装 假一赔十 |
询价 | ||
TOSHIBA |
19+ |
2290 |
询价 | ||||
TOSHIBA/东芝 |
21+ |
TO-3P(N) |
60000 |
绝对原装正品现货,假一罚十 |
询价 | ||
TOS |
22+23+ |
TO-3P |
8090 |
绝对原装正品全新进口深圳现货 |
询价 | ||
TOSHIBA/东芝 |
21+ |
65200 |
询价 | ||||
TOSHIBA/东芝 |
23+ |
TO-3P(N) |
12730 |
原装正品代理渠道价格优势 |
询价 | ||
TOSHIBA/东芝 |
23+ |
TO-3P(N) |
90000 |
只做原厂渠道价格优势可提供技术支持 |
询价 | ||
TOS |
22+ |
TO-3P |
360000 |
进口原装房间现货实库实数 |
询价 |
相关规格书
更多- 2SC5198-O(Q,T)
- 2SC5198OQ
- 2SC5198R
- 2SC5198-R(Q)
- 2SC5199-O(Q)
- 2SC519A
- 2SC5200
- 2SC5200-0
- 2SC5200N(S1,X,S)
- 2SC5200-O
- 2SC5200-OQ
- 2SC5200R
- 2SC5200RTU
- 2SC5201(F)
- 2SC5206
- 2SC5208
- 2SC520A
- 2SC5210
- 2SC5212
- 2SC5214
- 2SC5218
- 2SC521A
- 2SC5223
- 2SC5226
- 2SC5226-4
- 2SC5226A_12
- 2SC5226A-5-TL-E
- 2SC5227
- 2SC5227-4
- 2SC5227A
- 2SC5227A-4-TB-E
- 2SC5229
- 2SC5231A_12
- 2SC5231A-9-TL-E
- 2SC5231C8
- 2SC5231C9
- 2SC5232_03
- 2SC5232BTE85LF
- 2SC5233_07
- 2SC5233B
- 2SC5233BTE85LF
- 2SC5237B
- 2SC5238
- 2SC524
- 2SC5241
相关库存
更多- 2SC5198-O(S1,X,S)
- 2SC5198-OQ
- 2SC5198-R
- 2SC5199
- 2SC5199-R(Q)
- 2SC520
- 2SC5200_04
- 2SC52000TU
- 2SC5200O
- 2SC5200-O(Q)
- 2SC5200OTU
- 2SC5200-R(Q)
- 2SC5201
- 2SC5201_06
- 2SC5207A
- 2SC5209
- 2SC521
- 2SC5211
- 2SC5213
- 2SC5216
- 2SC5219
- 2SC522
- 2SC5225
- 2SC5226-3
- 2SC5226A
- 2SC5226A-4-TL-E
- 2SC5226A-D
- 2SC5227-3
- 2SC5227-5
- 2SC5227A_12
- 2SC5227A-5-TB-E
- 2SC5231A
- 2SC5231A-8-TL-E
- 2SC5231C7
- 2SC5231C8-TL-E
- 2SC5232
- 2SC5232-B(TE85L,F)
- 2SC5233
- 2SC5233A
- 2SC5233-B(TE85L,F)
- 2SC5237
- 2SC5237C
- 2SC5239
- 2SC5240
- 2SC5241-7000