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2SC409	文件：39.6 Kbytes Page：1 Pages	POWER TRANSISTOR POWERTRANSISTORS	SHINDENGENSHINDENGEN ELECTRIC MANUFACTURING CO.LTD 新电元（上海）电器有限公司	SHINDENGEN
2SC4092	文件：82.43 Kbytes Page：8 Pages	HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DESCRIPTION The2SC4092isanNPNsiliconepitaxialtransistordesignedforlow-noiseamplifieratVHF,UHFband.Itiscontainedin4pinsmini-moldpackagewhichenableshigh-isolationgain. FEATURES •NF=1.5dBTYP.@f=1.0GHz,VCE=10V,IC=5mA •\|S21e\|2=12dBTYP.@f=1.0GHz,	NECRenesas Electronics America 瑞萨瑞萨科技有限公司	NEC
2SC4093	文件：70.01 Kbytes Page：8 Pages	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DESCRIPTION The2SC4093isanNPNsiliconepitaxialtransistordesignedforlownoiseamplifieratVHF,UHFandCATVband. Ithaslargedynamicrangeandgoodcurrentcharacteritics,andiscontatinedina4pinsmini-moldpackagewhichenableshigh-isolationgain. FEATURES •LowNoise NF	NECRenesas Electronics America 瑞萨瑞萨科技有限公司	NEC
2SC4093	文件：571.15 Kbytes Page：6 Pages	NPN EPITAXIAL SILICON RF TRANSISTOR DESCRIPTION TheNE85639/2SC4093isaNPNsiliconepitaxialtransistordesignedforlownoiseamplifieratVHF,UHFandCATVband. Ithaslargedynamicrangeandgoodcurrentcharacteristics,andiscontainedina4-pinminimoldpackagewhichenableshigh-isolationgain. FEATURES •LowNoise	CEL California Eastern Laboratories	CEL
2SC4093	文件：175.25 Kbytes Page：9 Pages	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION DESCRIPTION The2SC4093isanNPNsiliconepitaxialtransistordesignedforlownoiseamplifieratVHF,UHFandCATVband. Ithaslargedynamicrangeandgoodcurrentcharacteristics,andiscontainedina4-pinminimoldpackagewhichenableshigh-isolationgain. FEATURES •LowNoise NF=	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
2SC4093-T1	文件：70.01 Kbytes Page：8 Pages	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DESCRIPTION The2SC4093isanNPNsiliconepitaxialtransistordesignedforlownoiseamplifieratVHF,UHFandCATVband. Ithaslargedynamicrangeandgoodcurrentcharacteritics,andiscontatinedina4pinsmini-moldpackagewhichenableshigh-isolationgain. FEATURES •LowNoise NF	NECRenesas Electronics America 瑞萨瑞萨科技有限公司	NEC
2SC4093-T2	文件：70.01 Kbytes Page：8 Pages	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DESCRIPTION The2SC4093isanNPNsiliconepitaxialtransistordesignedforlownoiseamplifieratVHF,UHFandCATVband. Ithaslargedynamicrangeandgoodcurrentcharacteritics,andiscontatinedina4pinsmini-moldpackagewhichenableshigh-isolationgain. FEATURES •LowNoise NF	NECRenesas Electronics America 瑞萨瑞萨科技有限公司	NEC
2SC4094	文件：102.16 Kbytes Page：8 Pages	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DESCRIPTION The2SC4094isanNPNepitaxialsilicontransistordesignedforuseinlow-noiseandsmallsignalamplifiersfromVHFbandtoUHFband.Lownoisefigure,highgain,andhighcurrentcapabilityachieveaverywidedynamicrangeandexcellentlinearity.Thisachievedbydirectnitridep	NECRenesas Electronics America 瑞萨瑞萨科技有限公司	NEC
2SC4094	文件：1.07911 Mbytes Page：5 Pages	MICROWAVE LOW NOISE AMPLIFIER DESCRIPTION TheNE68139/2SC4094isanNPNepitaxialsilicontransistordesignedforuseinlow-noiseandsmallsignalamplifiersfromVHFbandtoUHFband.Low-noisefigure,highgain,andhighcurrentcapabilityachieveaverywidedynamicrangeandexcellentlinearity.Thisachievedbydirect	CEL California Eastern Laboratories	CEL
2SC4094	文件：323.65 Kbytes Page：10 Pages	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The2SC4094isanNPNepitaxialsilicontransistordesignedforuseinlow-noiseandsmallsignalamplifiersfromVHFbandtoUHFband.Lownoisefigure,highgain,andhighcurrentcapabilityachieveaverywidedynamicrangeandexcellentlinearity.Thisachievedbydirectnitridepa	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
2SC4095	文件：107.18 Kbytes Page：8 Pages	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DESCRIPTION The2SC4095isanNPNepitaxialsilicontransistordesignedforuseinlow-noiseandsmallsignalamplifiersfromVHFbandtoUHFband.2SC4095featuresexcellentpowergainwithverylow-noisefigures.2SC4095employsdirectnitiridepassivatedbasesurfaceprocess(DNPprocess)whic	NECRenesas Electronics America 瑞萨瑞萨科技有限公司	NEC
2SC4095	文件：1.12648 Mbytes Page：6 Pages	MICROWAVE LOW NOISE AMPLIFIER DESCRIPTION TheNE68039/2SC4095isanNPNepitaxialsilicontransistordesignedforuseinlow-noiseandsmallsignalamplifiersfromVHFbandtoUHFband.NE68039/2SC4095featuresexcellentpowergainwithverylow-noisefigures.NE68039/2SC4095employsdirectnitiridepassivatedbasesurf	CEL California Eastern Laboratories	CEL
2SC4095	文件：329.19 Kbytes Page：10 Pages	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The2SC4095isanNPNepitaxialsilicontransistordesignedforuseinlow-noiseandsmallsignalamplifiersfromVHFbandtoUHFband.2SC4095featuresexcellentpowergainwithverylow-noisefigures.2SC4095employsdirectnitiridepassivatedbasesurfaceprocess(DNPprocess)wh	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
2SC4097	文件：74.94 Kbytes Page：4 Pages	Medium Power Transistor (32V, 0.5A) MediumPowerTransistor(32V,0.8A) Features 1)VeryLowVCE(sat). VCE(sat)=0.1V(Typ.) ̈́IC/IB=500УA/50mAͅ 2)Highcurrentcapacityincompactpackage. 3)Complementsthe2SB1197K.	ROHMRohm Semiconductor 罗姆罗姆半导体集团	ROHM
2SC4097	文件：83.39 Kbytes Page：2 Pages	Medium Power Transistor Features ●HighICMax.ICMax.=0.5A ●LowVCE(sat).Optimalforlowvoltageoperation.	KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司	KEXIN
2SC4097	文件：105.68 Kbytes Page：3 Pages	Medium Power Transistor FEATURES •HighICMax.ICMax=0.5A. •LowVCE(sat).Optimalforlowvoltageoperation. •Complementaryto2SA1577	SECOS SeCoS Halbleitertechnologie GmbH	SECOS
2SC4097	文件：1.19965 Mbytes Page：1 Pages	TRANSISTOR (NPN) FEATURES ●HighICMax.ICMax=0.5A ●LowVCE(sat).Optimalforlowvoltageoperation. ●Complementsthe2SA1577	HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd. 金誉半导体深圳市金誉半导体股份有限公司	HTSEMI
2SC4097	文件：153.23 Kbytes Page：3 Pages	Silicon Epitaxial Planar Transistor FEATURES ●ExcellenthFElinearity. ●Powerdissipation:PCM=200mW APPLICATIONS ●NPNSiliconEpitaxialPlanarTransistor.	BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司	BILIN
2SC4097	文件：1.44541 Mbytes Page：4 Pages	SOT-323 Plastic-Encapsulate Transistors TRANSISTOR(NPN) FEATURES ●HighICMax.=0.5A ●LowVCE(sat).Optimalforlowvoltageoperation. ●Complementsthe2SA1577	JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd	JIANGSU
2SC4097	文件：129.919 Kbytes Page：1 Pages	TRANSISTOR(NPN) FEATURES PowerdissipationPCM:200mW(Tamb=25℃) CollectorcurrentICM:500mA Collector-basevoltageV(BR)CBO:40V OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃	WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳实业深圳市永而佳实业有限公司	WINNERJOIN

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晶体管资料

型号：
2SC409
别名：
三极管、晶体管、晶体三极管
生产厂家：
制作材料：
Si-NPN
性质：
开关管（S）_功率放大（L）
封装形式：
直插封装
极限工作电压：
200V
最大电流允许值：
10A
最大工作频率：
<1MHZ或未知
引脚数：
2
可代换的型号：
BU109,BU110,BU210,BUX17A,BUX17B,BUX17C,BUX42,BUY18,BUY21,BUY74,2SC2944,3DD164C,
最大耗散功率：
100W
放大倍数：
β>10
图片代号：
E-44
vtest：
200
htest：
999900
atest：
10
wtest：
100

详细参数

型号：
2SC409
制造商：
SHINDENGEN
制造商全称：
Shindengen Electric Mfg.Co.Ltd
功能描述：
POWER TRANSISTOR

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市一线半导体有限公司	2SC409			TO-3	10000		询价
深圳市昌和盛利电子有限公司	2SC4095	NEC	23+	SOT143	8293		询价
深圳市毅创腾电子科技有限公司	2SC4097T106R	原装ROHM		SOT-323	3000	原装长期供货!	询价
深圳市粤科源兴科技有限公司	2SC4093	PHILIPS	13+	TO-50	20208	原装分销	询价
深圳市深创辉科技有限公司	2SC4097	ROHM	99		6850	原装正品长期供货，如假包赔包换徐小姐13714450367	询价
深圳市恒创达实业有限公司	2SC4093	NEC	17+	SOT-143	6200	100%原装正品现货	询价
深圳市益百分电子有限公司	2SC4097L	ROHM	06+	SOT23	4370	全新原装进口自己库存优势	询价
深圳市正川电子有限公司	2SC4093-T1	NEC	97+	SOT143	8450	现货-ROHO	询价
深圳市力通伟业半导体有限公司	2SC4093	NEC	13+		55000	特价热销现货库存	询价
千层芯半导体(深圳)有限公司	2SC4097-T106Q	ROHM	17+	SOT-323	1450	只做原装正品	询价

更多2SC409供应商更新时间2024-6-4 16:30:00

晶体管资料

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