2SC2655-Y

Power Amplifier Applications Power Switching Applications

PowerAmplifierApplications PowerSwitchingApplications •Lowsaturationvoltage:VCE(sat)=0.5V(max)(IC=1A) •Highcollectorpowerdissipation:PC=900mW •High-speedswitching:tstg=1.0μs(typ.) •Complementaryto2SA1020.

2SC2655-Y

NPN Plastic-Encapsulate Transistor

Features •Collectorof0.9WattsofPowerDissipation. •Collector-current2.0A •Operatingandstoragejunctiontemperaturerange:-55
to+150
•EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •LeadFreeFinish/RohsCompliant(PSuffixdesignatesRoHS

2SC2655-Y-T9N-B

POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS

POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS FEATURES *Lowsaturationvoltage:VCE(SAT)=0.5V(Max.) *Highspeedswitchingtime:tstg=1.0μs(Typ.)

2SC2655-Y-T9N-K

POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS

POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS FEATURES *Lowsaturationvoltage:VCE(SAT)=0.5V(Max.) *Highspeedswitchingtime:tstg=1.0μs(Typ.)

2SC2655-Y-T9N-R

POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS

POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS FEATURES *Lowsaturationvoltage:VCE(SAT)=0.5V(Max.) *Highspeedswitchingtime:tstg=1.0μs(Typ.)

2SC2655-Y(HIT,F,M)

包装：散装 封装/外壳：TO-226-3，TO-92-3 长体 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 50V 2A TO92MOD

Toshiba Semiconductor and Storage

2SC2655-Y(T6CANOFM

包装：散装 封装/外壳：TO-226-3，TO-92-3 长体 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 50V 2A TO92MOD

Toshiba Semiconductor and Storage

2SC2655-Y(T6CN,A,F

包装：散装 封装/外壳：TO-226-3，TO-92-3 长体 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 50V 2A TO92MOD

Toshiba Semiconductor and Storage

2SC2655

TRANSISTOR(POWERAMPLIFIER,SWITCHINGAPPLICATIONS)

PowerAmplifierApplications PowerSwitchingApplications •Lowsaturationvoltage:VCE(sat)=0.5V(max)(IC=1A) •Highcollectorpowerdissipation:PC=900mW •High-speedswitching:tstg=1.0μs(typ.) •Complementaryto2SA1020.

2SC2655

POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS

POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS FEATURES *Lowsaturationvoltage:VCE(SAT)=0.5V(Max.) *Highspeedswitchingtime:tstg=1.0μs(Typ.)

2SC2655

SiliconNPNEpitaxialType(PCTProcess)

2SC2655

NPNGeneralPurposeTransistors

NPNGeneralPurposeTransistors P/bLead(Pb)-Free

2SC2655

POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS

2SC2655

NPNPlasticEncapsulatedTransistor

FEATURES -Lowsaturationvoltage：VCE(sat)=0.5V(Max)(IC=1A) -Highspeedswitchingtime：tstg=1μs(Typ.) -Complementaryto2SA1020

2SC2655

TO-92LPlastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●LowSaturationVoltage:VCE(sat)=0.5V(Max)(IC=1A) ●HighSpeedSwitchingTime:tstg=1μs(Typ.) ●Complementaryto2SA1020

2SC2655

iscSiliconNPNPowTransistor

DESCRIPTION •SiliconNPNepitaxialtype •Lowsaturationvoltage •Complementaryto2SA1020 •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Poweramplifierapplications •Powerswitchingapplications

2SC2655

POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS

2SC2655

TRANSISTOR(NPN)

FEATURES ●Lowsaturationvoltage:VCE(sat)=0.5V(Max)(IC=1A) ●Highspeedswitchingtime:tstg=1μs(Typ.) ●Complementaryto2SA1020

2SC2655

SiliconNPNtransistorinaTO-92LMPlasticPackage

Descriptions SiliconNPNtransistorinaTO-92LMPlasticPackage. Features Lowsaturationvoltage,highspeedswitchingtime,complementaryto2SA1020. Applications Poweramplifierandswitchingapplications.

2SC2655

TRANSISTOR(NPN)

FEATURES Powerdissipation PCM:900mW(Tamb=25℃) Collectorcurrent ICM:2A Collector-basevoltage V(BR)CBO:50V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃