| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
2SA73 | SOT-23 Plastic-Encapsulate Transistors | UMWUMW 友台友台半导体 | UMW | |
Si PNP Epitaxial Planar SiPNPEpitaxialPlanar AFPowerAmplifierandDriver Complementarypairwith2SC1317,2SC1318,2SC1346,2SC1347 | ETC1List of Unclassifed Manufacturers 未分类制造商 | ETC1 | ||
Si PNP Epitaxial Planar SiPNPEpitaxialPlanar AFPowerAmplifierandDriver Complementarypairwith2SC1317,2SC1318,2SC1346,2SC1347 | ETC1List of Unclassifed Manufacturers 未分类制造商 | ETC1 | ||
PNP SILICON TRANSISTOR DESCRIPTION The2SA733isdesignedforuseindriverstateofAFamplifier. FEATURES ●HighhFEandExcellentLinearity:200TYP. hFE(VCE=-6.0V,IC=-1.0mA) | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description DesignedforuseindriverstageofAFamplifierapplicatioms. | DCCOMDc Components 直流元件直流元件有限公司 | DCCOM | ||
TO-92 Plastic-Encapsulate Transistors TRANSISTOR(PNP) FEATURES Powerdissipation | DAYADaya Electric Group Co., Ltd. Daya Electric Group Co., Ltd. | DAYA | ||
PNP Plastic Encapsulated Transistor FEATURES •Complementaryofthe2SC945 •Collectortobasevoltage:-60V | SECOS SeCoS Halbleitertechnologie GmbH | SECOS | ||
PNP EPITAXIAL PLANAR TRANSISTOR Description The2SA733isdesignedforuseindriverstageofAFamplifierapplications.. | TGS Tiger Electronic Co.,Ltd | TGS | ||
Silicon Epitaxial Planar Transistor FEATURES ●ExcellenthFELinearity. ●Powerdissipation：PD=250mW. ●HighhFE. APPLICATIONS ●Designedforuseindriverstageofamplifier. | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 | BILIN | ||
Collector-Base Voltage: VCBO=-60V Features ●Collector-BaseVoltage:VCBO=-60V | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | KEXIN | ||
Collector-Base Voltage FEATURES Collector-BaseVoltage ComplementtoC945 | MAKOSEMI MAKO SEMICONDUCTOR CO.,LIMITED | MAKOSEMI | ||
PNP Silicon Epitaxial Planar Transistor PNPSiliconEpitaxialPlanarTransistor forswitchingandAFamplifierapplications. Thetransistorissubdividedintofivegroups,R,O,Y, PandL,accordingtoitsDCcurrentgain.As complementarytypetheNPNtransistorST2SC945 isrecommended. Onspecialrequest,thesetransistorscan | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | DGNJDZ | ||
Silicon PNP transistor in a TO-92 Plastic Package Descriptions SiliconPNPtransistorinaTO-92PlasticPackage. Features HighhFEandexcellenthFElinearity. Applications DriverstageofAFpoweramplifier. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | FOSHAN | ||
Silicon Epitaxial Planar Transistor FEATURES ●ExcellenthFELinearity. ●Powerdissipation：PD=250mW. ●HighhFE. APPLICATIONS ●Designedforuseindriverstageofamplifier. | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 | LUGUANG | ||
PNP General Purpose Amplifier Features •Thisdeviceisdesignedforgeneralpurposeamplifierapplications atcollectorcurrentsto300mA. •SourcedfromProcess68. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
PNP SILICON TRANSISTOR DESCRIPTION The2SA733isdesignedforuseindiverstageofAFamplifier. FEATURES •HighhFEandExcellentLinearity:200TYP. hFE(VCE=−6.0V,IC=−1.0mA) ABSOLUTEMAXIMUMRATINGS MaximumTemperature StorageTemperature−55to+150°C JunctionTemperature+150°CMaximum MaximumPowe | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
TO-92 Plastic-Encapsulate Transistors FEATURE Complementaryto2SC945 ExcellenthFElinearity Lownoise | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | DGNJDZ | ||
TO-92 Plastic-Encapsulate Transistors FEATURE Complementaryto2SC945 ExcellenthFElinearity Lownoise | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | DGNJDZ | ||
PNP Silicon Plastic-Encapsulate Transistor Features •Capableof0.25WattsofPowerDissipation. •Collector-current0.1A •Collector-baseVoltage60V •Operatingandstoragejunctiontemperaturerange:-55℃to+150℃ •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •LeadFreeFinish/RohsCompliant(PSuffix | MCCMicro Commercial Components 美微科美微科半导体公司 | MCC | ||
Silicon PNP transistor in a SOT-23 Plastic Package Descriptions SiliconPNPtransistorinaSOT-23PlasticPackage. Features HighhFEandexcellenthFElinearity. Applications DriverstageofAFpoweramplifier. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | FOSHAN |
晶体管资料
- 型号：
- 别名：
三极管、晶体管、晶体三极管
- 生产厂家：
- 制作材料：
Ge-PNP
- 性质：
调幅 （AM）
- 封装形式：
直插封装
- 极限工作电压：
18V
- 最大电流允许值：
0.005A
- 最大工作频率：
35MHZ
- 引脚数：
3
- 可代换的型号：
AF124,AF125,AF126,AF200,2SA218,2SA219,2SA220,2SA221,2SA222,2SA223,2SA224,2SA225,2SA226,2SA227,
- 最大耗散功率：
- 放大倍数：
- 图片代号：
D-58
- vtest：
18
- htest：
35000000
- atest：
.005
- wtest：
0
详细参数
- 型号：
2SA73
- 功能描述：
Si PNP Epitaxial Planar
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
UMW 友台 |
23+ |
SOT-23-3 |
6000 |
原装正品，实单请联系 |
询价 | ||
UMW(广东友台半导体) |
24+ |
SOT-23-3 |
5000 |
诚信服务,绝对原装原盘。 |
询价 | ||
NEC |
23+ |
CAN |
4540 |
优势库存 |
询价 | ||
UMW(友台半导体) |
2112+ |
SOT-23-3 |
105000 |
3000个/圆盘一级代理专营品牌!原装正品,优势现货, |
询价 | ||
UMW |
23+ |
NA |
200 |
三极管 |
询价 | ||
UMW(友台半导体) |
1年内 |
SOT-23-3 |
150000 |
友台代理商 共奕芯城一站式元器件采购平台 自助下单 w |
询价 | ||
友台 |
23+ |
SOT-23 |
10200 |
优势原装现货假一赔十 |
询价 | ||
NEC |
23+ |
TO92 |
12335 |
询价 | |||
TO-3 |
10000 |
全新 |
询价 | ||||
NEC |
16+ |
原厂封装 |
3500 |
原装现货假一罚十 |
询价 |
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