2SA1730资料datasheet下载行情报价科信电子-114ic电子网

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2SA1730	文件：91.68 Kbytes Page：3 Pages	High-Speed Switching Applications High-SpeedSwitchingApplications Features ·AdoptionofFBET,MBITprocesses. ·Largecurrentcapacity. ·Lowcollector-to-emittersaturationvoltage. ·Fastswitchingspeed. ·Small-sizedpackage.	SANYOSanyo 三洋三洋电机株式会社	SANYO
2SA1730	文件：57.58 Kbytes Page：2 Pages	PNP Epitaxial Planar Silicon Features •AdoptionofFBET,MBITprocesses. •Largecurrentcapacity. •Lowcollector-to-emittersaturationvoltage. •Fastswitchingspeed. •Small-sizedpackage.	KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司	KEXIN
2SA1731	文件：97.21 Kbytes Page：3 Pages	High-Speed Switching Applications High-SpeedSwitchingApplications Features •AdoptionofFBET,MBITprocesses. •Largecurrentcapacity. •Lowcollector-to-emittersaturationvoltage. •Fastswitchingspeed.	SANYOSanyo 三洋三洋电机株式会社	SANYO
2SA1731	文件：322.39 Kbytes Page：3 Pages	Silicon PNP Power Transistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-40V(Min) ·DCCurrentGain- :hFE=70(Min)@IC=-0.5A ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
2SA1731	文件：303.36 Kbytes Page：3 Pages	Silicon PNP Power Transistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-40V(Min) ·DCCurrentGain- :hFE=70(Min)@IC=-0.5A ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
2SA1731-251	文件：322.39 Kbytes Page：3 Pages	Silicon PNP Power Transistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-40V(Min) ·DCCurrentGain- :hFE=70(Min)@IC=-0.5A ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
2SA1731-252	文件：303.36 Kbytes Page：3 Pages	Silicon PNP Power Transistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-40V(Min) ·DCCurrentGain- :hFE=70(Min)@IC=-0.5A ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
2SA1732	文件：94.56 Kbytes Page：3 Pages	High-Speed Switching Applications High-SpeedSwitchingApplications Features •AdoptionofFBETprocesses. •Largecurrentcapacity. •Lowcollector-to-emittersaturationvoltage. •Fastswitchingspeed.	SANYOSanyo 三洋三洋电机株式会社	SANYO
2SA1732	文件：302.96 Kbytes Page：3 Pages	Silicon PNP Power Transistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-40V(Min) ·DCCurrentGain- :hFE=70(Min)@IC=-0.5A ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
2SA1732	文件：321.99 Kbytes Page：3 Pages	Silicon PNP Power Transistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-40V(Min) ·DCCurrentGain- :hFE=70(Min)@IC=-0.5A ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
2SA1732-251	文件：321.99 Kbytes Page：3 Pages	Silicon PNP Power Transistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-40V(Min) ·DCCurrentGain- :hFE=70(Min)@IC=-0.5A ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
2SA1732-252	文件：302.96 Kbytes Page：3 Pages	Silicon PNP Power Transistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-40V(Min) ·DCCurrentGain- :hFE=70(Min)@IC=-0.5A ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
2SA1734	文件：56.81 Kbytes Page：2 Pages	Silicon PNP Epitaxial Features ●Lowsaturationvoltage:VCE(sat)=-0.5V(max)(IC=-700mA). ●Highspeedswitchingtime:tstg=0.2ìs(typ.). ●Smallflatpackage. ●PC=1.0to2.0W(mountedonceramicsubstrate).	KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司	KEXIN
2SA1734	文件：195.12 Kbytes Page：4 Pages	TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS) PowerAmplifierApplications PowerSwitchingApplications •Lowsaturationvoltage:VCE(sat)=−0.5V(max)(IC=−700mA) •Highspeedswitchingtime:tstg=0.2μs(typ.) •Smallflatpackage •PC=1.0to2.0W(mountedonaceramicsubstrate) •Complementaryto2SC4539	TOSHIBAToshiba Semiconductor 东芝株式会社東芝	TOSHIBA
2SA1734	文件：1.58274 Mbytes Page：73 Pages	Bipolar Small-Signal Transistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBAToshiba Semiconductor 东芝株式会社東芝	TOSHIBA
2SA1735	文件：225.62 Kbytes Page：2 Pages	Power Switching Applications Features ●LowSaturationVoltage:VCE(sat)=-0.5V(max)(IC=-500mA) ●HighSpeedSwitchingTime:tstg=0.25ìs(typ.) ●SmallFlatPackage ●PC=1to2W(mountedonceramicsubstrate) ●Complementaryto2SC4540	KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司	KEXIN
2SA1735	文件：148.59 Kbytes Page：3 Pages	TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS) PowerAmplifierApplications PowerSwitchingApplications •Lowsaturationvoltage:VCE(sat)=−0.5V(max)(IC=−500mA) •Highspeedswitchingtime:tstg=0.25μs(typ.) •Smallflatpackage •PC=1.0to2.0W(mountedonaceramicsubstrate) •Complementaryto2SC4540	TOSHIBAToshiba Semiconductor 东芝株式会社東芝	TOSHIBA
2SA1736	文件：195.86 Kbytes Page：4 Pages	TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS) PowerAmplifierApplications PowerSwitchingApplications •Lowsaturationvoltage:VCE(sat)=−0.5V(max)(IC=−1.5A) •Highspeedswitchingtime:tstg=0.2μs(typ.) •Smallflatpackage •PC=1.0to2.0W(mountedonaceramicsubstrate) •Complementaryto2SC4541	TOSHIBAToshiba Semiconductor 东芝株式会社東芝	TOSHIBA
2SA1736	文件：431.6 Kbytes Page：3 Pages	Power Switching Applications Features ●LowSaturationVoltage:VCE(sat)=-0.5V(max)(IC=-1.5A) ●HighSpeedSwitchingTime:tstg=0.2ìs(typ.) ●SmallFlatPackage ●PC=1to2W(mountedonceramicsubstrate) ●Complementaryto2SC4541	KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司	KEXIN
2SA1738	文件：41.22 Kbytes Page：2 Pages	Silicon PNP epitaxial planer type Forhighspeedswitching ■Features •Highspeedswitching(Pairwith2SC3757) •Lowcollector-emittersaturationvoltageVCE(sat) •Minitypepackage,allowingdownsizingoftheequipmentandautomaticinsertionthroughthetapepackingandthemagazinepacking.	PanasonicPanasonic Corporation 松下松下电器	Panasonic

12 3 >>>

晶体管资料

型号：
2SA1730
别名：
三极管、晶体管、晶体三极管
生产厂家：
制作材料：
Si-PNP
性质：
表面帖装型（SMD）_开关管（S）
封装形式：
直插封装
极限工作电压：
50V
最大电流允许值：
3A
最大工作频率：
300MHZ
引脚数：
3
可代换的型号：
2SB1440,
最大耗散功率：
放大倍数：
图片代号：
H-100
vtest：
50
htest：
300000000
atest：
3
wtest：
0

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市河锋鑫科技有限公司	2SA1730	ON/安森美	20+	SOT-89	120000	原装正品可含税交易	询价
深圳市汇莱威科技有限公司	2SA1730	ON/安森美		SOT89	7906200		询价
深圳好佳好科技有限公司	2SA1730	SANYO	360000	原厂原装	1305		询价
深圳市勤思达科技有限公司	2SA1730	SANYO	12+	SOT89	15000	全新原装,绝对正品,公司现货供应。	询价
深圳市一线半导体有限公司	2SA1730	SANYO	08PB		60000		询价
深圳市博浩通科技有限公司	2SA1730	SANYO	23+	SOT-89	31000	全新原装现货	询价
深圳市鹏和科技有限公司	2SA1730	UTG	24+	SOT-89	5000	只做原装公司现货	询价
深圳市永贝尔科技有限公司	2SA1730	KEXIN	23+	NA	19960	只做进口原装,终端工厂免费送样	询价
深圳市佳鑫美电子科技有限公司	2SA1730	SANYO	22+	SOT89	2987	只售原装自家现货!诚信经营!欢迎来电	询价
深圳兆威电子有限公司	2SA1730	安森美/ON	22+	SOT89-3L	23993	原装正品现货	询价

更多2SA173供应商更新时间2024-5-27 14:02:00

晶体管资料

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