2SA1365

FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE

DESCRIPTION 2SA1235isasuperminisiliconNPNepitaxialtypetransistordesignedwithhighcollectorcurrent,smallVce(sat). Complementarywith2SC3440. FEATURE ●Lowcollectortoemittersaturationvoltage.VCE(sat)=-0.2Vtyp ●ExcellentlinearityofDCforwardcurrentgain. ●Supermini

2SA1365

Silicon PNP Epitaxia

Features ●Lowcollectortoemittersaturationvoltage. ●ExcellentlinearitynofDCforwardcurrentgain. ●Superminipackageforeasymounting. ●Highcollectorcurrent. ●Highgainbandwidthproduct.

2SA1365

Silicon PNP transistor in a SOT-23 Plastic Package

Descriptions SiliconPNPtransistorinaSOT-23PlasticPackage. Features Lowcollectortoemittersaturationvoltage,excellentlinearityofDCforwardcurrentGain,highcollectorcurrent,highgainbandwidthproduct. Applications Smalltypemotordrive,relaydrive,powersupply.

2SA1365

FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE

2SA1365_10

FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE

2SA1365_15

PNP Transistors