首页 >2SA1162-Y,LF(T>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
TRANSISTOR(AUDIOFREQUENCYGENERALPURPOSEAMPLIFIERAPPLICATIONS) AudioFrequencyGeneralPurposeAmplifierApplications •Highvoltageandhighcurrent:VCEO=−50V,IC=−150mA(max) •ExcellenthFElinearity:hFE(IC=−0.1mA)/hFE(IC=−2mA) =0.95(typ.) •HighhFE:hFE=70~400 •Lownoise:NF=1dB(typ.), | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
AudioFrequencyGeneralPurposeAmplifierApplications | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
SiliconEpitaxialPlanarTransistor FEATURES ●Lownoise:NF=1dB(Typ),10dB(Max). ●Commplementaryto2SC2712. ●Smallpackage. APPLICATIONS ●Generalpurposeapplication. | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 | BILIN | ||
AudioFrequencyGeneralPurposeAmplifierApplications | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
Plastic-EncapsulatedTransistors TRANSISTOR(PNP) FEATURES Powerdissipation PCM:150mW(Tamb=25℃) Collectorcurrent ICM:150mA Collector-basevoltage V(BR)CBO:-50V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | TEL TRANSYS Electronics Limited | TEL | ||
PNPSiliconGeneralPurposeTransistor FEATURES •LowNoise:NF=1dB(Typ.),10dB(Max.) •Complementsofthe2SC2712 MECHANICALDATA •Case:SOT-23,MoldedPlastic •Weight:0.008grams(approx.) | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | ||
PNPSiliconGeneralPurposeTransistor | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | ||
TRANSISTOR(PNP) FEATURES .Lownoise:NF=1dB(Typ.),10dB(Max.) .Complementaryto2SC2712. .SmallPackage. MARKING:SO,SY,SG | HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd. 金誉半导体深圳市金誉半导体股份有限公司 | HTSEMI | ||
SiliconPNPEpitaxialTypeTransistor ■Features ●Highvoltageandhighcurrent ●HighhFE:hFE=70~400 ●Lownoise:NF=1dB(typ.),10dB(max) ●Complementaryto2SC2712 | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | KEXIN | ||
TOSHIBATransistorSiliconPNPEpitaxialType(PCTprocess) AudioFrequencyGeneralPurposeAmplifierApplications •Highvoltageandhighcurrent:VCEO=−50V,IC=−150mA(max) •ExcellenthFElinearity:hFE(IC=−0.1mA)/hFE(IC=−2mA) =0.95(typ.) •HighhFE:hFE=70~400 •Lownoise:NF=1dB(typ.), | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
SiliconEpitaxialPlanarTransistor | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 | BILIN | ||
TOSHIBATransistorSiliconPNPEpitaxialType(PCTprocess) AudioFrequencyGeneralPurposeAmplifierApplications •Highvoltageandhighcurrent:VCEO=−50V,IC=−150mA(max) •ExcellenthFElinearity:hFE(IC=−0.1mA)/hFE(IC=−2mA) =0.95(typ.) •HighhFE:hFE=70~400 •Lownoise:NF=1dB(typ.), | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
SOT-23Plastic-EncapsulateTransistors TRANSISTOR(PNP) FEATURES ●Lownoise ●Complementaryto2SC2712 ●SmallPackage | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | JIANGSU | ||
PNPGeneralPurposeTransistor FEATURES PNPGeneralPurposeTransistor | GSMEGuilin Strong Micro-Electronics Co., Ltd. Guilin Strong Micro-Electronics Co., Ltd. | GSME | ||
PNPEPITAXIALSILICONTRANSISTOR PNPEPITAXIALSILICONTRANSISTOR LOWFREQRENCY,LOWNOISEAMPLIFIER •Complemento2SC2712 •Collector-current:Ic=-100mA Collector-EmillerVoltage:VCE=-45V | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳实业深圳市永而佳实业有限公司 | WINNERJOIN | ||
Plastic-EncapsulateTransistors FEATURES Lownoise:NF=1dB(Typ.),10dB(Max.) Complementaryto2SC2712. SmallPackage. | HOTTECHGuangdong Hottech Co. Ltd. 合科泰广东合科泰实业有限公司 | HOTTECH | ||
SiliconPNPtransistorinaSOT-23PlasticPackage Descriptions SiliconPNPtransistorinaSOT-23PlasticPackage. Features Highvoltageandcurrent,excellenthFElinearity,highhFE,lownoise,complementaryto2SC2712. Applications Audiofrequencygeneralpurposeamplifierapplications. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | FOSHAN | ||
SiliconPNPEpitaxialTypeTransistor | BWTECHBruckewell Technology LTD 布吕克韦尔技术布吕克韦尔技术有限公司 | BWTECH | ||
PNPTransistors ■Features ●Highvoltageandhighcurrent ●HighhFE:hFE=70~400 ●Lownoise:NF=1dB(typ.),10dB(max) ●Complementaryto2SC2712 | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | YFWDIODE | ||
NewJerseySemi-ConductorProducts, NewJerseySemi-ConductorProducts | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI |
详细参数
- 型号：
2SA1162-Y,LF(T
- 制造商：
Toshiba America Electronic Components
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TOSHIBA |
22+ |
SOT23 |
21000 |
原厂原装,价格优势!13246658303 |
询价 | ||
TOSHIBA |
22+ |
N/A |
2500 |
进口原装,优势现货 |
询价 | ||
TOSHIBA |
22+ |
SMD |
108000 |
询价 | |||
TOSHIBA |
22+ |
NA |
1533 |
原装正品支持实单 |
询价 | ||
TOSHIBA |
23+ |
NA |
100 |
现货!就到京北通宇商城 |
询价 | ||
TOSHIBA/东芝 |
23+ |
6500 |
专注配单,只做原装进口现货 |
询价 | |||
TOSHIBA-东芝 |
24+25+/26+27+ |
车规-元器件 |
143788 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
TOSHIBA/东芝 |
23+ |
6500 |
专注配单,只做原装进口现货 |
询价 | |||
TOSHIBA/东芝 |
23+ |
SOT353 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
TOSHIBA/东芝 |
2022 |
SOT353 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 |
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