2SA1162-O

PNP Transistors

■Features ●Highvoltageandhighcurrent ●HighhFE:hFE=70~400 ●Lownoise:NF=1dB(typ.),10dB(max) ●Complementaryto2SC2712

2SA1162-O

PNP Silicon Plastic-Encapsulate Transistor

Features •Capableof0.15WattsofPowerDissipation. •Collector-current:0.15A •Collector-baseVoltage:-50V •Operatingandstoragejunctiontemperaturerange:-55°Cto+150°C •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 ​​​​​​​•LeadFreeFinish/RoHS

2SA1162-O

PNP Silicon Plastic-Encapsulate Transistor

2SA1162-O

PNP Transistors

2SA1162-O_13

PNP Silicon Plastic-Encapsulate Transistor

2SA1162-O-HF

PNP Transistors

2SA1162-O,LF

包装：散装 封装/外壳：TO-236-3，SC-59，SOT-23-3 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 50V 0.15A SMINI

Toshiba Semiconductor and Storage

2SA1162-O,LXHF

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 封装/外壳：TO-236-3，SC-59，SOT-23-3 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 50V 0.15A SMINI

Toshiba Semiconductor and Storage

2SA1162-O-AP

包装：卷带（TR） 封装/外壳：TO-236-3，SC-59，SOT-23-3 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 50V 0.15A SOT23

2SA1162

TRANSISTOR(AUDIOFREQUENCYGENERALPURPOSEAMPLIFIERAPPLICATIONS)

AudioFrequencyGeneralPurposeAmplifierApplications •Highvoltageandhighcurrent:VCEO=−50V,IC=−150mA(max) •ExcellenthFElinearity:hFE(IC=−0.1mA)/hFE(IC=−2mA) =0.95(typ.) •HighhFE:hFE=70~400 •Lownoise:NF=1dB(typ.),

2SA1162

AudioFrequencyGeneralPurposeAmplifierApplications

2SA1162

SiliconEpitaxialPlanarTransistor

FEATURES ●Lownoise:NF=1dB(Typ),10dB(Max). ●Commplementaryto2SC2712. ●Smallpackage. APPLICATIONS ●Generalpurposeapplication.

2SA1162

AudioFrequencyGeneralPurposeAmplifierApplications

2SA1162

Plastic-EncapsulatedTransistors

TRANSISTOR(PNP) FEATURES Powerdissipation PCM:150mW(Tamb=25℃) Collectorcurrent ICM:150mA Collector-basevoltage V(BR)CBO:-50V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

2SA1162

PNPSiliconGeneralPurposeTransistor

FEATURES •LowNoise:NF=1dB(Typ.),10dB(Max.) •Complementsofthe2SC2712 MECHANICALDATA •Case:SOT-23,MoldedPlastic •Weight:0.008grams(approx.)

2SA1162

PNPSiliconGeneralPurposeTransistor

2SA1162

TRANSISTOR(PNP)

FEATURES .Lownoise:NF=1dB(Typ.),10dB(Max.) .Complementaryto2SC2712. .SmallPackage. MARKING:SO,SY,SG

2SA1162

SiliconPNPEpitaxialTypeTransistor

■Features ●Highvoltageandhighcurrent ●HighhFE:hFE=70~400 ●Lownoise:NF=1dB(typ.),10dB(max) ●Complementaryto2SC2712

2SA1162

Plastic-EncapsulateTransistors

FEATURES .Lownoise .Complementaryto2SC2712 .SmallPackage

2SA1162

SiliconPNPEpitaxialTypeTransistor