2N7002KDW

60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES •RDS(ON),VGS@10V,IDS@500mA=3Ω •RDS(ON),VGS@4.5V,IDS@200mA=4Ω •AdvancedTrenchProcessTechnology •HighDensityCellDesignForUltraLowOn-Resistance •VeryLowLeakageCurrentInOffCondition •SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelaysDrivers:Re

2N7002KDW

Dual N-Channel MOSFET

Features: *LowOn-Resistance *FastSwitchingSpeed *Low-voltagedrive *Easilydesigneddrivecircuits *ESDProtected:2000V MechanicalData: *Case:SOT-363,MoldedPlastic *CaseMaterial-ULFlammabilityRating94V-0 *Terminals:SolderableperMIL-STD-202,Method208 *Weight:0.006gr

2N7002KDW

Dual N-Channel Small Signal MOSFET

FEATURES ●Lowon-resistance ●FastswitchingSpeed ●Low-voltagedrive ●Easilydesigneddrivecircuits ●ESDprotected:2000V MECHANICALDATA ●Case:SOT-363 ●CaseMaterial-ULflammabilityrating94V-0 ●Terminals:SolderableperMIL-STD-202,Method208 ●Weight:0.006grams(approx.)

2N7002KDW

Dual N-Channel Enhancement Mode Field Effect Transistor

ProductSummary ●VDS60V ●ID0.34A ●RDS(ON)(atVGS=10V)

2N7002KDW

60V ESD Protected N-Channel Enhancement Mode MOSFET

RDS(ON),VGS@10V,IDS@500mA=2Ω RDS(ON),VGS@4.5V,IDS@200mA=3Ω FEATURES •AdvancedTrenchProcessTechnology •UltraLowOnResistance:2Ω •FastSwitchingSpeed:20ns •LowInputandOutputLeakageCurrent •2KVESDProtection •SpeciallyDesignedforHighSpeedCircuit,BatteryOperate

2N7002KDW

N-Channel Enhancement Mode Field Effect Transistor

Features •HighdensitycelldesignforLowRDS(ON) •Voltagecontrolledsmallsignalswitch •Ruggedandreliable •Highsaturationcurrentcapability •ESDprotectedupto2KV •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •Halogenfreeavailableuponrequest

2N7002KDW

Plastic-Encapsulate MOSFET

Features HighdensitycelldesignforlowRDS(ON) Voltagecontrolledsmallsignalswitch Ruggedandreliable Highsaturationcurrentcapability ESDprotected LoadSwitchforPortableDevices. DC/DCConverter.

2N7002KDW

N-channel MOSFET

2N7002KDW

Dual N-Channel Small Signal MOSFET

2N7002KDW

Dual N-Channel 60 V (D-S) MOSFET

2N7002KDW_V01

60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES •RDS(ON),VGS@10V,IDS@500mA=3Ω •RDS(ON),VGS@4.5V,IDS@200mA=4Ω •AdvancedTrenchProcessTechnology •HighDensityCellDesignForUltraLowOn-Resistance •VeryLowLeakageCurrentInOffCondition •SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays Drivers:R

2N7002KDWA

N-Channel Enhancement Mode Field Effect Transistor

Features •HighdensitycelldesignforLowRDS(ON) •Voltagecontrolledsmallsignalswitch •Ruggedandreliable •Highsaturationcurrentcapability •ESDprotectedupto2KV •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •Halogenfreeavailableuponrequest

2N7002KDW-AU

60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES •RDS(ON),VGS@10V,IDS@500mA=3Ω •RDS(ON),VGS@4.5V,IDS@200mA=4Ω •AdvancedTrenchProcessTechnology •HighDensityCellDesignForUltraLowOn-Resistance •VeryLowLeakageCurrentInOffCondition •SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays Drivers

2N7002KDW-CAR

Plastic-Encapsulate MOSFETS

FEATURE HighdensitycelldesignforLowRDS（on） Voltagecontrolledsmallsignalswitch Ruggedandreliable Highsaturationcurrentcapability ESDprotected -CARforautomotiveandotherapplicationsrequiringunique siteandcontrolchangerequirements;AEC-Q101qualifiedand PPAPca

2N7002KDW_10

60V N-Channel Enhancement Mode MOSFET - ESD Protected

2N7002KDW_14

60V N-Channel Enhancement Mode MOSFET - ESD Protected

2N7002KDW_15

Dual N-Channel Small Signal MOSFET

2N7002KDW-G

MOSFET

2N7002

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Description •N-channelenhancementmodefieldeffecttransistor,designedforhighspeedpulsedamplifieranddriverapplications,whichismanufactoredbytheN-ChannelDMOSprocess. Features •HighdensitycelldesignforlowRDS(ON). •Voltagecontrolledsmallsignalswitching. •Ruggeda

2N7002

N-ChannelEnhancement-ModeVerticalDMOSFETs

GeneralDescription TheSupertex2N7002isanenhancement-mode(normallyoff)transistorthatutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistors,andtheh