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2N5401NLBU

包装:带盒(TB) 封装/外壳:TO-226-3,TO-92-3 标准主体(!--TO-226AA) 类别:分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 描述:TRANS PNP 150V 0.6A TO92-3

ONSEMION Semiconductor

安森美半导体安森美半导体公司

2N5401

AmplifierTransistor(PNPSilicon)

PNPSilicon

MotorolaMotorola, Inc

摩托罗拉

2N5401

PNPhigh-voltagetransistor

DESCRIPTION PNPhigh-voltagetransistorinaTO-92;SOT54plasticpackage.NPNcomplement:2N5551. FEATURES •Lowcurrent(max.300mA) •Highvoltage(max.150V). APPLICATIONS •Generalpurposeswitchingandamplification •Telephonyapplications.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

2N5401

PNPEPITAXIALSILICONTRANSISTOR

AMPLIFIERTRANSISTOR ●Collector-EmitterVoltage:VCEO=150V ●CollectorDissipation:Pc(max)=625mW

SamsungSamsung Group

三星三星半导体

2N5401

PNPSiliconExpitaxialPlanarTransistorforgeneralpurpose,highvoltageamplifierapplications???

PNPSiliconExpitaxialPlanarTransistorforgeneralpurpose,highvoltageamplifierapplications

SEMTECH

Semtech Corporation

2N5401

PNPGeneralPurposeAmplifier

PNPGeneralPurposeAmplifier Thisdeviceisdesignedasageneralpurposeamplifierandswitchforapplicationsrequiringhighvoltages.SourcedfromProcess74.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

2N5401

EPITAXIALPLANARPNPTRANSISTOR(GENERALPURPOSE,HIGHVOLTAGE)

GENERALPURPOSEAPPLICATION. HIGHVOLTAGEAPPLICATION. FEATURES •HighCollectorBreakdwonVoltage :VCBO=-160V,VCEO=-150V •LowLeakageCurrent. :ICBO=-50nA(Max.)@VCB=-120V •LowSaturationVoltage :VCE(sat)=-0.5V(Max.)@IC=-50mA,IB=-5mA •LowNoise:NF=8dB(Max.)

KECKEC CORPORATION

KEC株式会社

2N5401

COMPLEMENTARYSILICONGENERALPURPOSEHIGHVOLTAGETRANSISTORS

2N5400,2N5401-->PNP 2N5550,2N5551-->NPN

MICRO-ELECTRONICS

Micro Electronics

2N5401

PNPSiliconTransistor(GeneralpurposeamplifierHighvoltageapplication)

Description •Generalpurposeamplifier •Highvoltageapplication Features •Highcollectorbreakdownvoltage:VCBO=-160V,VCEO=-150V •Lowcollectorsaturationvoltage:VCE(sat)=-0.5V(MAX.) •Complementarypairwith2N5551

AUK

AUK

2N5401

AmplifierTransistors

AmplifierTransistors PNPSilicon Features •Pb−FreePackagesareAvailable*

ONSEMION Semiconductor

安森美半导体安森美半导体公司

2N5401

HIGHVOLTAGESWITCHINGTRANSISTOR

HIGHVOLTAGESWITCHINGTRANSISTOR FEATURES *Collector-emittervoltage:VCEO=-150V *Highcurrentgain

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

2N5401

SmallSignalTransistorsTO-92Case(Continued)

DESCRIPTION: TheCENTRALSEMICONDUCTOR2N4400and2N4401aresiliconNPNtransistorsdesignedforgeneralpurposeamplifierandswitchingapplications.PNPcomplementarytypesare2N4402and2N4403. MARKING:FULLPARTNUMBER

CentralCentral Semiconductor Corp

美国中央半导体

2N5401

PNPTransistors

PNPTransistors

WEITRONWEITRON

威堂電子科技

2N5401

Plastic-EncapsulatedTransistors

TO-92Plastic-EncapsulatedTransistors FEATURE Powerdissipation PCM:0.625W(Tamb=25℃) Collectorcurrent ICM:-0.6A Collector-basevoltage V(BR)CBO:-160V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

TEL

TRANSYS Electronics Limited

2N5401

GeneralPurposeSi-EpitaxialPlanarTransistors

•Powerdissipation625mW •PlasticcaseTO-92 •Weightapprox.0.18g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedinammopack

DiotecDIOTEC

德欧泰克

2N5401

PNPTransistorPlastic-EncapsulateTransistors

PNPTransistorPlastic-EncapsulateTransistors FEATURES PowerDissipation PCM:0.625W(Tamb=25) Collectorcurrent ICM:-0.6A Collector-basevoltage V(BR)CBO:-160V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

2N5401

PNPSiliconAmplifierTransistor625mW

Features •HalogenFreeAvailableUponRequestByAddingSuffix-HF •MoistureSensitivityLevel1 •EpoxyMeetsUL94V-0FlammabilityRating •LeadFreeFinish/RoHSCompliant(PSuffixDesignatesRoHS Compliant.SeeOrderingInformation)

MCCMicro Commercial Components

美微科美微科半导体公司

2N5401

TO-92Plastic-EncapsulateTransistors

TO-92Plastic-EncapsulateTransistors FEATURE Switchingandamplificationinhighvoltage Applicationssuchastelephony Lowcurrent(max.600mA) Highvoltage(max.160v)

DAYADaya Electric Group Co., Ltd.

大亚电器集团大亚电器集团有限公司Daya Electric Group Co., Ltd.

2N5401

TECHNICALSPECIFICATIONSOFPNPEPITAXIALPLANARTRANSISTOR

Description Designedforgeneralpurposeamplifierapplications.

DCCOMDc Components

直流元件直流元件有限公司

2N5401

PNPPlasticEncapsulatedTransistor

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

产品属性

  • 产品编号:

    2N5401NLBU

  • 制造商:

    onsemi

  • 类别:

    分立半导体产品 > 晶体管 - 双极性晶体管(BJT)- 单个

  • 包装:

    带盒(TB)

  • 晶体管类型:

    PNP

  • 不同 Ib、Ic 时 Vce 饱和压降(最大值):

    500mV @ 5mA,50mA

  • 电流 - 集电极截止(最大值):

    50nA(ICBO)

  • 不同 Ic、Vce 时 DC 电流增益 (hFE)(最小值):

    60 @ 10mA,5V

  • 频率 - 跃迁:

    400MHz

  • 工作温度:

    -55°C ~ 150°C(TJ)

  • 安装类型:

    通孔

  • 封装/外壳:

    TO-226-3,TO-92-3 标准主体(!--TO-226AA)

  • 供应商器件封装:

    TO-92-3

  • 描述:

    TRANS PNP 150V 0.6A TO92-3

供应商型号品牌批号封装库存备注价格
ON Semiconductor
2022+
TO-92-3
38550
全新原装 支持表配单 中国著名电子元器件独立分销
询价
Fairchild
23+
33500
询价
onsemi
24+
TO-226-3,TO-92-3 标准主体(!-
9350
独立分销商,公司只做原装,诚心经营,免费试样正品保证
询价
FAIR
16+
原厂封装
2838
原装现货假一罚十
询价
Central Semiconductor
21+
200
全新原装鄙视假货15118075546
询价
Central Semiconductor
20+
200
只做原装
询价
CENTARL
TO-92-3
22+
56000
全新原装进口,假一罚十
询价
CENTRAL-中环
24+25+/26+27+
TO-92-3
43788
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
ST(先科)
23+
NA
50
功率三极管
询价
FSC/ON
23+
原包装原封□□
18000
原装进口特价供应QQ1304306553更多详细咨询库存
询价
更多2N5401NLBU供应商 更新时间2024-6-19 15:00:00