零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
2N4232A | POWER TRANSISTORS(5A,75W) COMPLEMENTARYSILICONMEDIUM-POWERTRANSISTORS ..designedforgeneral-purposepoweramplifierandswitchingapplications. FEATURES: *LowCollector-EmitterSaturationVoltageVCE(sat)=0.7V(Max.)@lc=1.5A *ExcellentDCCurrentGainhFE=25-100@lc=1.5A *LowLeakageCurrent-lcex=0. | MOSPEC MOSPEC | MOSPEC | |
2N4232A | COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS COMPLEMENTARYSILICONMEDIUM-POWERTRANSISTORS ..designedforgeneral-purposepoweramplifierandswitchingapplications. FEATURES: *LowCollector-EmitterSaturationVoltageVCE(sat)=0.7V(Max.)@lc=1.5A *ExcellentDCCurrentGainhFE=25-100@lc=1.5A *LowLeakageCurrent-lcex=0. | bocaBoca semiconductor corporation 博卡博卡半导体公司 | boca | |
2N4232A | Bipolar NPN Device in a Hermetically sealed TO66 BipolarNPNDeviceinaHermeticallysealedTO66MetalPackage. BipolarNPNDevice. VCEO=60V IC=5A | SEME-LAB Seme LAB | SEME-LAB | |
2N4232A | Power Transistors PowerTransistorsTO-66Case | CentralCentral Semiconductor Corp 美国中央半导体 | Central | |
2N4232A | COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS COMPLEMENTARYSILICONMEDIUM-POWERTRANSISTORS ..designedforgeneral-purposepoweramplifierandswitchingapplications. FEATURES: *LowCollector-EmitterSaturationVoltageVCE(sat)=0.7V(Max.)@lc=1.5A *ExcellentDCCurrentGainhFE=25-100@lc=1.5A *LowLeakageCurrent-lcex= | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | |
2N4232A | COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS COMPLEMENTARYSILICONMEDIUM-POWERTRANSISTORS ..designedforgeneral-purposepoweramplifierandswitchingapplications. FEATURES: *LowCollector-EmitterSaturationVoltageVCE(sat)=0.7V(Max.)@lc=1.5A *ExcellentDCCurrentGainhFE=25-100@lc=1.5A *LowLeakageCurrent-lcex= | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | |
2N4232A | isc Silicon NPN Power Transistor DESCRIPTION •ExcellentSafeOperatingArea •LowCollector-EmitterSaturationVoltage •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation. APPLICATIONS •Designedforgeneral-purposepoweramplifierandswitchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | |
2N4232A | COMPLEMENTARY SILICON POWER TRANSISTORS | CentralCentral Semiconductor Corp 美国中央半导体 | Central | |
2N4232A | 包装:散装 类别:分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 描述:PNP TRANSISTOR | MicrochipMicrochip Technology Inc. 微芯科技微芯科技股份有限公司 | Microchip | |
BipolarNPNDeviceinaHermeticallysealedTO66MetalPackage | SEME-LAB Seme LAB | SEME-LAB | ||
PowerTransistors PowerTransistorsTO-66Case | CentralCentral Semiconductor Corp 美国中央半导体 | Central | ||
PowerTransistors PowerTransistors | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
BipolarNPNDeviceinaHermeticallysealedTO66MetalPackage | SEME-LAB Seme LAB | SEME-LAB |
晶体管资料
- 型号:
- 别名:
三极管、晶体管、晶体三极管
- 生产厂家:
- 制作材料:
Si-NPN
- 性质:
低频或音频放大 (LF)_开关管 (S)_功率放大 (L
- 封装形式:
直插封装
- 极限工作电压:
50V
- 最大电流允许值:
5A
- 最大工作频率:
>4MHZ
- 引脚数:
2
- 可代换的型号:
BD243A,BD539B,BD951,2N3054,3DD67C,
- 最大耗散功率:
75W
- 放大倍数:
- 图片代号:
E-44
- vtest:
50
- htest:
4000100
- atest:
5
- wtest:
75
产品属性
- 产品编号:
2N4232A
- 制造商:
Microchip Technology
- 类别:
分立半导体产品 > 晶体管 - 双极性晶体管(BJT)- 单个
- 包装:
散装
- 描述:
PNP TRANSISTOR
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ASI |
18+ |
TO-02 |
60 |
现货正品专供军研究院 |
询价 | ||
TO-66 |
10000 |
全新 |
询价 | ||||
BOCA |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
ASI |
18 |
TO-02 |
200 |
进口原装正品优势供应QQ3171516190 |
询价 | ||
ASI |
N/A |
TO-02 |
567 |
以质为本,只做原装正品 |
询价 | ||
Microsemi |
1942+ |
N/A |
908 |
加我qq或微信,了解更多详细信息,体验一站式购物 |
询价 | ||
MICROSEMI |
1809+ |
SMD |
96 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
TI |
BGA |
6850 |
莱克讯每片来自原厂原盒原包装假一罚十价优 |
询价 | |||
22+ |
长期备有现货 |
500000 |
行业低价,代理渠道 |
询价 | |||
Microchip |
2022+ |
原厂原包装 |
8600 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 |