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2N3906

PNPSiliconGeneralPurposeTransistor

FEATURES ●PowerDissipationPCM:625mW(Ta=25°C) ●CollectorCurrentICM:-200mA ●Collector–BaseVoltageV(BR)CBO:-40V

SECOS

SeCoS Halbleitertechnologie GmbH

2N3906

GeneralPurposeTransistors

ONSEMION Semiconductor

安森美半导体安森美半导体公司

2N3906

PNPSILICONTRANSISTOR:

DESCRIPTION: TheCENTRALSEMICONDUCTOR2N3905and2N3906typesarePNPsilicontransistorsdesignedforgeneralpurposeamplifierandswitchingapplications.NPNcomplementarytypesare2N3903and2N3904. MARKING:FULLPARTNUMBER

CentralCentral Semiconductor Corp

美国中央半导体

2N3906

TO-92Plastic-EncapsulateTransistors

TRANSISTOR(PNP) FEATURE ●PNPsiliconepitaxialplanartransistorforswitchingandAmplifierapplications ●Ascomplementarytype,theNPNtransistor2N3904isRecommended ●ThistransistorisalsoavailableintheSOT-23casewiththetypedesignationMMBT3906

DAYADaya Electric Group Co., Ltd.

Daya Electric Group Co., Ltd.

2N3906

TRANSISTOR(PNP)

PRODUCTSUMMARY TO-92Plastic-EncapsulateTransistors FEATURES PNPsiliconepitaxialplanartransistorforswitchingandAmplifierapplications Ascomplementarytype,theNPNtransistor2N3904isRecommended ThistransistorisalsoavailableintheSOT-23casewiththetypedesignation

SSC

Silicon Standard Corp.

2N3906

PNPGeneralPurposeAmplifier

MCCMicro Commercial Components

美微科美微科半导体公司

2N3906

PNPGeneralPurposeTransistor

SECOS

SeCoS Halbleitertechnologie GmbH

2N3906

EPITAXIALPLANARPNPTRANSISTOR

KECKEC CORPORATION

KEC株式会社

2N3906

PNPEPITAXIALPLANARTRANSISTOR

Description The2N3906isdesignedforgeneralpurposeswitchingandamplifierapplications.

TGS

Tiger Electronic Co.,Ltd

2N3906

Si-Epitaxial-PlanarSwitchingTransistors

•Powerdissipation625mW •PlasticcaseTO-92(10D3) •Weightapprox.0.18g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedinammopack

DiotecDIOTEC

德欧泰克

2N3906

PNPGeneralPurposeAmplifier

MCCMicro Commercial Components

美微科美微科半导体公司

2N3906

PNPSILICONPLANAREPITAXIALTRANSISTORS

MICRO-ELECTRONICS

Micro Electronics

2N3906

TRANSISTOR(PNP)

FEATURE Powerdissipation PCM:0.625W(Tamb=25℃) Collectorcurrent ICM:-0.2A Collector-basevoltage V(BR)CBO:-40V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳实业深圳市永而佳实业有限公司

2N3906

Plastic-EncapsulatedMultipleTransistors??QuadSurfaceMount(Case751B-SO-16)??NPN/PNP)

ALLIED

Allied Components International

2N3906

PNPSILICONTRANSISTOR

CentralCentral Semiconductor Corp

美国中央半导体

2N3906

Plastic-EncapsulateTransistors

FEATURE ●PNPsiliconepitaxialplanartransistorforswitchingandAmplifierapplications ●Ascomplementarytype,theNPNtransistor2N3904isRecommended ●ThistransistorisalsoavailableintheSOT-23casewiththetypedesignationMMBT3906

HOTTECHGuangdong Hottech Co. Ltd.

合科泰广东合科泰实业有限公司

2N3906

SiliconPNPtransistorinaTO-92PlasticPackage

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

2N3906

GeneralPurposePNPTransistors

DiotecDIOTEC

德欧泰克

2N3906

TRANSISTOR(PNP)

KOOCHIN

SHENZHEN KOO CHIN ELECTRONICS CO., LTD.

2N3906

PNPsiliconepitaxialplanartransistorforswitchingandAmplifierapplications

FEATURE ●PNPsiliconepitaxialplanartransistorforswitchingand Amplifierapplications ●Ascomplementarytype,theNPNtransistor2N3904is Recommended

FS

First Silicon Co., Ltd

详细参数

  • 型号:

    2N3906RA

  • 功能描述:

    两极晶体管 - BJT

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    PNP 集电极—基极电压

  • VCBO:

    集电极—发射极最大电压

  • VCEO:

    - 40 V 发射极 - 基极电压

  • VEBO:

    - 6 V

  • 增益带宽产品fT:

    直流集电极/Base Gain hfe

  • Min:

    100 A

  • 安装风格:

    SMD/SMT

  • 封装/箱体:

    PowerFLAT 2 x 2

供应商型号品牌批号封装库存备注价格
23+
N/A
65210
正品授权货源可靠
询价
FAIRCHILD/仙童
2021+
TO-92
62000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
询价
ON
22+
TO-92
12800
本公司只做进口原装!优势低价出售!
询价
ONSEMI
23/22+
NA
9000
代理渠道.实单必成
询价
MOTOROLA
1992
2013
原装正品现货供应
询价
MOTOROLA
最新
3550
原装正品 现货供应 价格优
询价
MOTOROLA
23+
589610
新到现货 原厂一手货源 价格秒杀代理!
询价
ON Semiconductor
2022+
原厂原包装
8600
全新原装 支持表配单 中国著名电子元器件独立分销
询价
ON-安森美
24+25+/26+27+
TO-92-3
18800
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
ON
23+
原厂封装
9526
询价
更多2N3906RA供应商 更新时间2024-5-16 11:36:00