首页 >2N3904S-RTKP>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
NPNGeneral-PurposeAmplifier Description Thisdeviceisdesignedasageneral−purposeamplifierandswitch. Theusefuldynamicrangeextendsto100mAasaswitchandto 100MHzasanamplifier. | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
NPNGeneralPurposeAmplifier Description Thisdeviceisdesignedasageneral-purposeamplifierandswitch.Theusefuldynamicrangeextendsto100mAasaswitchandto100MHzasanamplifier. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
TO-92Plastic-EncapsulateTransistors Features NPNsiliconepitaxialplanartransistorforswitchingand Amplifierapplications Ascomplementarytype,thePNPtransistor2N3906is Recommended ThistransistorisalsoavailableintheSOT-23casewith thetypedesignationMMBT3904 | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | DGNJDZ | ||
NPNGeneral-PurposeAmplifier Description Thisdeviceisdesignedasageneral−purposeamplifierandswitch. Theusefuldynamicrangeextendsto100mAasaswitchandto 100MHzasanamplifier. | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
NPNGeneral-PurposeAmplifier Description Thisdeviceisdesignedasageneral−purposeamplifierandswitch. Theusefuldynamicrangeextendsto100mAasaswitchandto 100MHzasanamplifier. | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
NPNGeneral-PurposeAmplifier Description Thisdeviceisdesignedasageneral−purposeamplifierandswitch. Theusefuldynamicrangeextendsto100mAasaswitchandto 100MHzasanamplifier. | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
GeneralPurposeTransistor | FS First Silicon Co., Ltd | FS | ||
EPITAXIALPLANARNPNTRANSISTOR(GENERALPURPOSE,SWITCHING) GENERALPURPOSEAPPLICATION. SWITCHINGAPPLICATION. FEATURES •LowLeakageCurrent :ICEX=50nA(Max.),IBL=50nA(Max.) @VCE=30V,VEB=3V. •ExcellentDCCurrentGainLinearity. •LowSaturationVoltage :VCE(sat)=0.3V(Max.)@IC=50mA,IB=5mA. •LowCollectorOutputCapacitance | KECKEC CORPORATION KEC株式会社 | KEC | ||
USMPACKAGE | KECKEC CORPORATION KEC株式会社 | KEC | ||
EPITAXIALPLANARNPNTRANSISTOR GENERALPURPOSEAPPLICATION. SWITCHINGAPPLICATION. FEATURES •LowLeakageCurrent :ICEX=50nA(Max.),IBL=50nA(Max.) @VCE=30V,VEB=3V. •ExcellentDCCurrentGainLinearity. •LowSaturationVoltage :VCE(sat)=0.3V(Max.)@IC=50mA,IB=5mA. •LowCollectorOutputCapacitance | KECKEC CORPORATION KEC株式会社 | KEC | ||
NPNEPITAXIALPLANARTRANSISTOR | GTM 勤益投資控股股份有限公司 | GTM | ||
TheG2N3904isdesignedforgeneralpurposeswitchingandamplifierapplications. | ETLE-Tech Electronics LTD 亞歷電子亞歷電子有限公司 | ETL | ||
PNPEPITAXIALPLANARTRANSISTOR Description TheH2N3904isdesignedforgeneralpurposeswitchingandamplifierapplications. | HSMC 华昕 | HSMC | ||
GeneralPurposeTransistorsNPNSilicon | LRCLeshan Radio Co., Ltd 乐山无线电乐山无线电股份有限公司 | LRC | ||
NPNEpitaxialSiliconTransistor | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | ETC1 | ||
NPNEpitaxialSiliconTransistor | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | ETC1 | ||
NPNEpitaxialSiliconTransistor | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | ETC1 | ||
NPNswitchingtransistor NPNswitchingtransistorinaTO-92;SOT54plasticpackage.PNPcomplement:2N3906. 1.Lowcurrent(max.200mA) 2.Lowvoltage(max.40V). | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
TRANSISTOR(NPN) | YEASHINYea Shin Technology Co., Ltd 亞昕科技亞昕科技股份有限公司 | YEASHIN |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
KECPL |
SOT-23 |
70230 |
16余年资质 绝对原盒原盘 更多数量 |
询价 | |||
KEC |
23+ |
SOT-23 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
KEC |
2022 |
SOT-23 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 | ||
KEC |
21+ |
SOT23 |
430 |
原装现货假一赔十 |
询价 | ||
KEC |
22+ |
SOT23 |
32350 |
原装正品 假一罚十 公司现货 |
询价 | ||
KEC |
21+ |
SOT23 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
KEC/KEC CORPORATION/KEC株式会 |
21+ |
SOT23 |
430 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
KEC |
22+ |
SOT23 |
25000 |
原装现货,价格优惠,假一罚十 |
询价 | ||
KEC |
1823+ |
SOT23 |
100 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
AVX |
2022+ |
D |
6000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 |
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