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CS299H

DarlingtonLampDriver

Description Thisintegratedcircuitisaflipchiplampdriverforuseinanautomotivealternatorsystem.Thecircuitdrivesanindicatorlamplocatedonthedashboard.Reversebatteryprotectionisprovidedwithinternaldiode,D1,andexternalresistorsonB,C1andC2. Features ■DCCurrent

CherryCHERRY

珠海确励珠海确励电子有限公司

FDZ299P

P-Channel2.5VSpecifiedPowerTrenchBGAMOSFET

GeneralDescription CombiningFairchild’sadvanced2.5VspecifiedPowerTrenchprocesswithstateoftheartBGApackaging,theFDZ299PminimizesbothPCBspaceandRDS(ON).ThisBGAMOSFETembodiesabreakthroughinpackagingtechnologywhichenablesthedevicetocombineexcellentthermaltransf

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

HCTS299D

RadiationHardened8-BitUniversalShiftRegister;Three-State

Description TheIntersilHCTS299MSisaRadiationHardened8-bitshift/storageregisterwiththree-statebusinterfacecapability.Theregisterhasfoursynchronousoperatingmodescontrolledbythetwoselectinputs(S0,S1).Themodeselect,theserialdata(DS0,DS7)andtheparalleldata(IO

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HCTS299D

RadiationHardened8-BitUniversalShiftRegister;Three-State

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HCTS299D

RadiationHardened8-BitUniversalShiftRegister;Three-State

Features •3MicronRadiationHardenedCMOSSOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

HCTS299DMSR

RadiationHardened8-BitUniversalShiftRegister;Three-State

Features •3MicronRadiationHardenedCMOSSOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

HCTS299DMSR

RadiationHardened8-BitUniversalShiftRegister;Three-State

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HCTS299DMSR

RadiationHardened8-BitUniversalShiftRegister;Three-State

Description TheIntersilHCTS299MSisaRadiationHardened8-bitshift/storageregisterwiththree-statebusinterfacecapability.Theregisterhasfoursynchronousoperatingmodescontrolledbythetwoselectinputs(S0,S1).Themodeselect,theserialdata(DS0,DS7)andtheparalleldata(IO

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HCTS299HMSR

RadiationHardened8-BitUniversalShiftRegister;Three-State

Description TheIntersilHCTS299MSisaRadiationHardened8-bitshift/storageregisterwiththree-statebusinterfacecapability.Theregisterhasfoursynchronousoperatingmodescontrolledbythetwoselectinputs(S0,S1).Themodeselect,theserialdata(DS0,DS7)andtheparalleldata(IO

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HCTS299HMSR

RadiationHardened8-BitUniversalShiftRegister;Three-State

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HCTS299HMSR

RadiationHardened8-BitUniversalShiftRegister;Three-State

Features •3MicronRadiationHardenedCMOSSOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

HCTS299K

RadiationHardened8-BitUniversalShiftRegister;Three-State

Features •3MicronRadiationHardenedCMOSSOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

HCTS299K

RadiationHardened8-BitUniversalShiftRegister;Three-State

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HCTS299K

RadiationHardened8-BitUniversalShiftRegister;Three-State

Description TheIntersilHCTS299MSisaRadiationHardened8-bitshift/storageregisterwiththree-statebusinterfacecapability.Theregisterhasfoursynchronousoperatingmodescontrolledbythetwoselectinputs(S0,S1).Themodeselect,theserialdata(DS0,DS7)andtheparalleldata(IO

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HCTS299KMSR

RadiationHardened8-BitUniversalShiftRegister;Three-State

Description TheIntersilHCTS299MSisaRadiationHardened8-bitshift/storageregisterwiththree-statebusinterfacecapability.Theregisterhasfoursynchronousoperatingmodescontrolledbythetwoselectinputs(S0,S1).Themodeselect,theserialdata(DS0,DS7)andtheparalleldata(IO

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HCTS299KMSR

RadiationHardened8-BitUniversalShiftRegister;Three-State

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HCTS299KMSR

RadiationHardened8-BitUniversalShiftRegister;Three-State

Features •3MicronRadiationHardenedCMOSSOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

HCTS299MS

RadiationHardened8-BitUniversalShiftRegister;Three-State

Features •3MicronRadiationHardenedCMOSSOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

HCTS299MS

RadiationHardened8-BitUniversalShiftRegister;Three-State

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HCTS299MS

RadiationHardened8-BitUniversalShiftRegister;Three-State

Description TheIntersilHCTS299MSisaRadiationHardened8-bitshift/storageregisterwiththree-statebusinterfacecapability.Theregisterhasfoursynchronousoperatingmodescontrolledbythetwoselectinputs(S0,S1).Themodeselect,theserialdata(DS0,DS7)andtheparalleldata(IO

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

供应商型号品牌批号封装库存备注价格
VASHAY
23+
1206-8
15000
全新原装现货,价格优势
询价
INTERSIL
03/04+
QFN10
840
全新原装100真实现货供应
询价
INTERSIL
23+
QFN
9680
价格优势、原装现货、客户至上。欢迎广大客户来电查询
询价
INTERSIL
2339+
QFN10
8858
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
INTERSIL
2013
QFN
1000
全新
询价
INTERSIL
2021+
QFN10
6540
原装现货/欢迎来电咨询
询价
XX
2023+环保现货
QFN
66
专注军工、汽车、医疗、工业等方案配套一站式服务
询价
INTERSIL
23+
QFN10
3880
正品原装货价格低qq:2987726803
询价
INTERSIL
QFN
265209
假一罚十原包原标签常备现货!
询价
INTERSIL
23+
QFN
50000
全新原装正品现货,支持订货
询价
更多299X供应商 更新时间2024-6-6 16:51:00