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28F016XD

16-MBIT (1 MBIT x 16) DRAM-INTERFACE FLASH MEMORY

INTRODUCTION ThedocumentationoftheIntel28F016XDflashmemorydeviceincludesthisdatasheet,adetaileduser’smanual,andanumberofapplicationnotesanddesigntools,allofwhicharereferencedinAppendixB. Thedatasheetisintendedtogiveanoverviewofthechipfeature-setandof

IntelIntel Corporation(Integrated Electronics Corporation)

英特尔英特尔(集成电子公司)

28F016SA

28F016SA16-MBIT(1MBITX16,2MBITX8)FlashFileMEMORY

INTRODUCTION ThedocumentationoftheIntel28F016SAmemorydeviceincludesthisdatasheet,adetaileduser’smanual,andanumberofapplicationnotes,allofwhicharereferencedattheendofthisdatasheet. IncludesCommercialandExtendedTemperatureSpecifications ■User-Selectable3.3Vo

IntelIntel Corporation(Integrated Electronics Corporation)

英特尔英特尔(集成电子公司)

28F016SV

16-MBIT(1MBITx16,2MBITx8)FlashFileMEMORY

Intel’s28F016SV16-MbitFlashFile™memoryisarevolutionaryarchitecturewhichistheidealchoicefordesigningembeddeddirect-executecodeandmassstoragedata/fileflashmemorysystems.Withinnovativecapabilities,low-poweroperation,user-selectableVPPvoltageandhighread/programperf

IntelIntel Corporation(Integrated Electronics Corporation)

英特尔英特尔(集成电子公司)

28F016XS

16-MBIT(1MBITx16,2MBITx8)SYNCHRONOUSFLASHMEMORY

Intel’s28F016XS16-Mbitflashmemoryisarevolutionaryarchitecturewhichistheidealchoicefordesigningtrulyrevolutionaryhigh-performanceproducts.Combiningveryhighreadperformancewiththeintrinsicnonvolatilityofflashmemory,the28F016XSeliminatesthetraditionalredundantmemo

IntelIntel Corporation(Integrated Electronics Corporation)

英特尔英特尔(集成电子公司)

LH28F016LL

16M(1M횞16,2M횞8)FlashMemory

INTRODUCTION Sharp’sLH28F016LL16MFlashMemoryisarevolutionaryarchitecturewhichenablesthedesignoftrulymobile,highperformance,personalcomputingandcommunicationproducts.Withinnovativecapabilities,3Vsinglevoltageoperationandveryhighread/writeperformance,theLH28F016

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

LH28F016SA

16M(1M횞16,2M횞8)FlashMemory

INTRODUCTION Sharp’sLH28F016SA16MFlashMemoryisarevolutionaryarchitecturewhichenablesthedesignoftrulymobile,highperformance,personalcomputingandcommunicationproducts.Withinnovativecapabilities,5Vsinglevoltageoperationandveryhighread/writeperformance,theLH28F016

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

LH28F016SANS

16Mbit(1Mbitx16,2Mbitx8)

16Mbit(1Mbitx16,2Mbitx8)FlashMemory

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

LH28F016SCH

16-MBIT(2MBx8)SmartVoltageFlashMEMORY

16M(2Mx8)SmartVoltageFlashMemory

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

LH28F016SCHB

16MbitFlashMemory

16MbitFlashMemory

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

LH28F016SCH-L

16M-bit(2MBx8)SmartVoltageFlashMemories

DESCRIPTION TheLH28F016SC-L/SCH-LflashmemorieswithSmartVoltagetechnologyarehigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.Theirsymmetrically-blockedarchitecture,flexiblevoltageandenhancedcyclingcapabilityprovideforhighlyflexi

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

LH28F016SCH-L

16-MBIT(2MBx8)SmartVoltageFlashMEMORY

16M(2Mx8)SmartVoltageFlashMemory

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

LH28F016SC-L

16M-bit(2MBx8)SmartVoltageFlashMemories

DESCRIPTION TheLH28F016SC-L/SCH-LflashmemorieswithSmartVoltagetechnologyarehigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications.Theirsymmetrically-blockedarchitecture,flexiblevoltageandenhancedcyclingcapabilityprovideforhighlyflexi

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

LH28F016SCT

Smartvoltage16MbitFlashMemory

16MbitFlashMemory

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

LH28F016SU

16M(1M횞16,2M횞8)FlashMemory

INTRODUCTION Sharp’sLH28F016SU16MFlashMemoryisarevolutionaryarchitecturewhichenablesthedesignoftrulymobile,highperformance,personalcomputingandcommunicationproducts.Withinnovativecapabilities,5Vsinglevoltageoperationandveryhighread/writeperformance,theLH28F0

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

LH28F016SUHT

16Mbit(1Mbitx16,2Mbitx8)5VSingleVoltageFlashMemory

16Mbit(1Mbitx16,2Mbitx8)5VSingleVoltageFlashMemory INTRODUCTION Thespecificationsintendedtogiveanoverviewofthechipfeature-setandoftheoperatingAC/DCspecifications.PleaserefertoUsersManualalso,toleamdetailusage.

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美国夏普微电子公司(SMA)

MS28F016SV

16-Mbit(1-Mbitx16,2-Mbitx8)FlashFileTMMEMORY

Intel’sVS/MS28F016SV,16-MbitFlashFiIeTMMemoryisthelatestmemberofIntel’shighdensity,highperformancememoryfamilyfortheIndustrial,SpecialEnvironment,andMilitarymarkets.ItsuserselectableVCCandVPP(SmartVoltageTechnology),innovativecapabilities,100compatibilitywitht

IntelIntel Corporation(Integrated Electronics Corporation)

英特尔英特尔(集成电子公司)

TE28F016

SMART3ADVANCEDBOOTBLOCK4-,8-,16-,32-MBITFLASHMEMORYFAMILY

INTRODUCTION ThisdatasheetcontainsthespecificationsfortheAdvancedBootBlockflashmemoryfamily,whichisoptimizedforlowpower,portablesystems.Thisfamilyofproductsfeatures1.65V–2.5Vor2.7V–3.6VI/OsandalowVCC/VPPoperatingrangeof2.7V–3.6Vforread,program,ande

IntelIntel Corporation(Integrated Electronics Corporation)

英特尔英特尔(集成电子公司)

VS28F016SV

16-Mbit(1-Mbitx16,2-Mbitx8)FlashFileTMMEMORY

Intel’sVS/MS28F016SV,16-MbitFlashFiIeTMMemoryisthelatestmemberofIntel’shighdensity,highperformancememoryfamilyfortheIndustrial,SpecialEnvironment,andMilitarymarkets.ItsuserselectableVCCandVPP(SmartVoltageTechnology),innovativecapabilities,100compatibilitywitht

IntelIntel Corporation(Integrated Electronics Corporation)

英特尔英特尔(集成电子公司)

详细参数

  • 型号:

    28F016XD

  • 制造商:

    INTEL

  • 制造商全称:

    Intel Corporation

  • 功能描述:

    16-MBIT(1 MBIT x 16) DRAM-INTERFACE FLASH MEMORY

供应商型号品牌批号封装库存备注价格
STE
2021+
SMT
100500
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6680
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6528
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Laird
20+
电感器
682000
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Laird Technologies
2022+
590
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LAIRD
20+
滤波器
6647
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LAIRD
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SMD
1709
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79500
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更多28F016XD供应商 更新时间2024-6-3 15:03:00